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    Varied morphology carbon nanotubes and method for their manufacture
    1.
    发明授权
    Varied morphology carbon nanotubes and method for their manufacture 有权
    不同形态的碳纳米管及其制造方法

    公开(公告)号：US07157068B2

    公开(公告)日：2007-01-02

    申请号：US10151382

    申请日：2002-05-20

    申请人： Wenzhi Li ,  Jian Guo Wen ,  Zhi Feng Ren

    发明人： Wenzhi Li ,  Jian Guo Wen ,  Zhi Feng Ren

    IPC分类号： D01F9/12

    CPC分类号： B01J37/036 ,  B01J23/745 ,  B01J23/75 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  Y10S977/843

    摘要： The present invention describes the preparation of carbon nanotubes of varied morphology, catalyst materials for their synthesis. The present invention also describes reactor apparatus and methods of optimizing and controlling process parameters for the manufacture carbon nanotubes with pre-determined morphologies in relatively high purity and in high yields. In particular, the present invention provides methods for the preparation of non-aligned carbon nanotubes with controllable morphologies, catalyst materials and methods for their manufacture.

    摘要翻译： 本发明描述了不同形态的碳纳米管的制备，用于它们的合成的催化剂材料。 本发明还描述了反应器装置和优化和控制具有相对高纯度和高收率的具有预定形态的制造碳纳米管的工艺参数的方法。 特别地，本发明提供了制备具有可控形态的非对准碳纳米管的方法，催化剂材料及其制造方法。

    Superconductor and precursor therefor, their preparation and use of superconductor
    2.
    发明授权
    Superconductor and precursor therefor, their preparation and use of superconductor 失效
    超导体及其前体，其超导体的制备和使用

    公开(公告)号：US5872079A

    公开(公告)日：1999-02-16

    申请号：US762211

    申请日：1996-12-06

    申请人： Masaru Nakamura ,  Yasuji Yamada ,  Jian-Guo Wen ,  Yuh Shiohara ,  Shoji Tanaka

    发明人： Masaru Nakamura ,  Yasuji Yamada ,  Jian-Guo Wen ,  Yuh Shiohara ,  Shoji Tanaka

    IPC分类号： C04B35/45 ,  C01G1/00 ,  C01G3/00 ,  H01B12/02 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24 ,  H01B12/00 ,  C04B35/50 ,  C04B35/622

    CPC分类号： H01L39/126 ,  Y10S505/78 ,  Y10S505/819

    摘要： A superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not less than 40% of a crystal of the superconductor shows phase separation, and at (temperature, magnetic field) of (77�K!, O�T!) and (77�K!, 4�T!), a critical current density is not less than 10,000 A/cm.sup.2, which is obtained by heating a precursor which is a solid solution of the formula (I):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y (I)wherein not more than 10% of a crystal of the solid solution shows phase separation, so that phase separation is formed in the crystals at a phase separation temperature, and introducing oxygen; and a superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not more than 10% of a crystal of the superconductor shows phase separation, and in a magnetic field of not less than 1�T! at a constant temperature of 77�K!, a critical current density is less than 10,000 A/cm.sup.2, which is obtained by introducing oxygen into the precursor (I) at a temperature less than the lower limit of the phase separation temperature. According to the method of the present invention, a superconductor having a high Jc or having different properties with respect to Jc, which is unobtainable by the conventional production method, can be obtained using the conventional materials.

    摘要翻译： 包含式（II）化合物的超导体：R1 + xBa2-xCu3O7-y1（II）其中不低于40％的超导体的晶体显示相分离，并且在（77℃）的（温度， K]，O [T]）和（77 [K]，4 [T]），临界电流密度不小于10,000A / cm 2，这是通过加热作为式 I）：R1 + xBa2-xCu3O7-y（I）其中不超过10％的固溶体晶体显示相分离，从而在相分离温度下在晶体中形成相分离并引入氧; 以及包含式（II）的化合物的超导体：R1 + xBa2-xCu3O7-y1（II）其中不超过10％的超导体的晶体显示相分离，并且在不小于1 [ T]在77 [K]的恒定温度下，临界电流密度小于10,000A / cm 2，其通过在低于相分离温度的下限的温度下将氧引入前体（I）而获得。 根据本发明的方法，可以使用常规材料获得具有高Jc或具有相对于Jc的不同性能的超导体，其通过常规制备方法是不可获得的。

    High temperature superconductor Josephson junction element and manufacturing method for the same
    3.
    发明授权
    High temperature superconductor Josephson junction element and manufacturing method for the same 失效
    高温超导体约瑟夫逊结元件及其制造方法相同

    公开(公告)号：US06541789B1

    公开(公告)日：2003-04-01

    申请号：US09385710

    申请日：1999-08-30

    申请人： Tetsuro Sato ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Shoji Tanaka

    发明人： Tetsuro Sato ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Shoji Tanaka

    IPC分类号： H01L3922

    CPC分类号： H01L39/2496 ,  H01L39/225

    摘要： In a method of manufacturing a Josephson junction, a first superconductive layer is formed on a substrate. An insulating film is formed on the first superconductive layer. The insulating film is etched to have an inclination portion. The first superconductive layer is etched using the etched insulating film as a mask, to have an inclination portion. A barrier layer is formed on a surface of the inclination portion of the first superconductive layer. A second superconductive layer is formed on the barrier layer and the inclination portion of the insulating layer.

    摘要翻译： 在制造约瑟夫逊结的方法中，在基板上形成第一超导层。 绝缘膜形成在第一超导层上。 绝缘膜被蚀刻以具有倾斜部分。 使用蚀刻绝缘膜作为掩模蚀刻第一超导层，以具有倾斜部分。 在第一超导层的倾斜部分的表面上形成阻挡层。 在隔离层和绝缘层的倾斜部分上形成第二超导层。

    Oxide superconductor multilayered film and oxide superconductor josephson device
    4.
    发明授权
    Oxide superconductor multilayered film and oxide superconductor josephson device 失效
    氧化物超导体多层膜和氧化物超导体约瑟夫森装置

    公开(公告)号：US6011981A

    公开(公告)日：2000-01-04

    申请号：US814172

    申请日：1997-03-10

    申请人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

    发明人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

    IPC分类号： H01L39/12 ,  H01L39/22

    CPC分类号： H01L39/128 ,  H01L39/225 ,  Y10S505/702

    摘要： An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

    摘要翻译： 一种氧化物超导多层薄膜结构，其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构，所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。 例如，由M'Ba2Cu3O7-δ（M'，Nd，Sm，Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜， 这些的合金，δ;氧耗尽量）和由化学式M * Ba2Cu3O7-δ（M *; Pr，Sc等元素或它们的合金，δ;氧气）表示的氧化物薄膜 耗尽量）交替堆叠。 氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。 可以通过使用多层膜来提供约瑟夫森装置。

    Varied morphology carbon nanotubes
    7.
    发明申请
    Varied morphology carbon nanotubes 审中-公开
    不同形态的碳纳米管

    公开(公告)号：US20080118426A1

    公开(公告)日：2008-05-22

    申请号：US11544329

    申请日：2006-10-09

    申请人： Wenzhi Li ,  Jian Guo Wen ,  Zhifeng Ren

    发明人： Wenzhi Li ,  Jian Guo Wen ,  Zhifeng Ren

    IPC分类号： D01F9/12

    CPC分类号： B01J37/036 ,  B01J23/745 ,  B01J23/75 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  Y10S977/843

    摘要： The present invention describes the preparation of carbon nanotubes of varied morphology, catalyst materials for their synthesis. The present invention also describes reactor apparatus and methods of optimizing and controlling process parameters for the manufacture carbon nanotubes with pre-determined morphologies in relatively high purity and in high yields. In particular, the present invention provides methods for the preparation of non-aligned carbon nanotubes with controllable morphologies, catalyst materials and methods for their manufacture.

    摘要翻译： 本发明描述了不同形态的碳纳米管的制备，用于它们的合成的催化剂材料。 本发明还描述了反应器装置和优化和控制具有相对高纯度和高收率的具有预定形态的制造碳纳米管的工艺参数的方法。 特别地，本发明提供了制备具有可控形态的非对准碳纳米管的方法，催化剂材料及其制造方法。

    Method for fabricating oxide superconducting device
    9.
    发明授权
    Method for fabricating oxide superconducting device 失效
    氧化物超导器件的制造方法

    公开(公告)号：US06207067B1

    公开(公告)日：2001-03-27

    申请号：US09161697

    申请日：1998-09-29

    申请人： Naoki Yutani ,  Katsumi Suzuki ,  Youichi Enomoto ,  Jian-Guo Wen

    发明人： Naoki Yutani ,  Katsumi Suzuki ,  Youichi Enomoto ,  Jian-Guo Wen

    IPC分类号： C23F100

    CPC分类号： H01L39/2496 ,  Y10S505/728

    摘要： A method for fabricating an oxide superconducting device includes the steps of: forming a V-shaped groove on a substrate by a converging ion beam and forming a barrier with reduced superconductivity on the oxide superconducting thin-film on the groove to form a Josephson Junction, wherein the irradiation ion amount of the converging ion beam is varied according to the position of the beam within the groove in such a manner that an inclination angle of the inclined portion of the substrate is fixed. An oxide superconducting device (a Josephson Junction device) having a high degree of flexibility in arrangement and with high reproducibility, and having a high degree of uniformity is provided.

    摘要翻译： 一种制造氧化物超导器件的方法包括以下步骤：通过会聚离子束在衬底上形成V形槽，并在沟槽上的氧化物超导薄膜上形成具有降低的超导性的阻挡层以形成约瑟夫逊结， 其中会聚离子束的照射离子量根据所述槽内的所述光束的位置以固定所述基板的倾斜部分的倾斜角度的方式而变化。 提供了具有高度的布置灵活性和高重现性并且具有高均匀度的氧化物超导装置（约瑟夫逊结装置）。