公开(公告)号：US09852965B2

公开(公告)日：2017-12-26

申请号：US15204632

申请日：2016-07-07

申请人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

发明人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2924/181 ,  H01L2924/00012

摘要： Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.

公开(公告)号：US20150287680A1

公开(公告)日：2015-10-08

申请号：US14677649

申请日：2015-04-02

申请人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

发明人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.

摘要翻译： 具有通过电极覆盖有自对准保护层的半导体器件。 半导体器件包括：半导体衬底，其包括形成在其中的集成电路;半导体衬底上的覆盖集成电路的层间介质层;具有至少一个金属线的金属间介电层，该金属线设置在层间电介质层上并电连接 到集成电路，以及垂直穿透层间电介质层和半导体衬底的贯通电极。 贯通电极包括顶部，该顶部被第一保护层盖住，该第一保护层能够防止通孔的构成物从通孔扩散。

公开(公告)号：US20110254856A1

公开(公告)日：2011-10-20

申请号：US13069189

申请日：2011-03-22

申请人： Mijun YOO ,  Hyunho Kang ,  Hanbee Kim ,  Jisoon Park

发明人： Mijun YOO ,  Hyunho Kang ,  Hanbee Kim ,  Jisoon Park

IPC分类号： G09G5/00

CPC分类号： H04M1/72544 ,  G06F3/04817 ,  G06F3/04847 ,  H04M1/72558

摘要： A mobile terminal and a method of controlling the operation of the mobile terminal are discussed. The method includes selecting a multimedia file to be played; displaying a progress bar having an animated character on a display module; and moving the animated character across the progress bar according to the progress of the playback of the selected multimedia file. Therefore, it is possible to effectively visualize the progress of the playback of the selected multimedia file by using the animated character.

摘要翻译： 讨论了移动终端和控制移动终端的操作的方法。 该方法包括选择要播放的多媒体文件; 在显示模块上显示具有动画角色的进度条; 并根据所选择的多媒体文件的播放进度，将动画角色移动到进度条上。 因此，可以通过使用动画角色来有效地可视化所选择的多媒体文件的播放的进度。

公开(公告)号：US20060278985A1

公开(公告)日：2006-12-14

申请号：US11312441

申请日：2005-12-21

申请人： Hyunseok Lim ,  Jisoon Park ,  Dongjo Kang ,  Jungwook Kim ,  Insun Park ,  Hyunsuk Lee

发明人： Hyunseok Lim ,  Jisoon Park ,  Dongjo Kang ,  Jungwook Kim ,  Insun Park ,  Hyunsuk Lee

IPC分类号： H01L23/48

CPC分类号： H01L27/0688 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/8221 ,  H01L23/485

摘要： A multilevel semiconductor device and method of making the same includes a first active semiconductor structure, a first insulating layer on the first active semiconductor structure, a second active semiconductor structure on the first insulating layer and over the first active semiconductor structure, a second insulating layer on the second active semiconductor structure, and a contact structure including a first ohmic contact having a vertical thickness on an upper surface of the first active semiconductor structure and a second ohmic contact of a lateral thickness on a sidewall of the second active semiconductor structure, the vertical thickness being greater than the lateral thickness.

摘要翻译： 多级半导体器件及其制造方法包括第一有源半导体结构，第一有源半导体结构上的第一绝缘层，第一绝缘层上和第一有源半导体结构上的第二有源半导体结构，第二绝缘层 在第二有源半导体结构上，以及包括在第一有源半导体结构的上表面上具有垂直厚度的第一欧姆接触和第二有源半导体结构的侧壁上的横向厚度的第二欧姆接触的接触结构， 垂直厚度大于横向厚度。

公开(公告)号：US20170047270A1

公开(公告)日：2017-02-16

申请号：US15204632

申请日：2016-07-07

申请人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

发明人： Ho-Jin Lee ,  Byung Lyul Park ,  Kwangjin Moon ,  Jisoon Park ,  Jin Ho An

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2924/181 ,  H01L2924/00012

摘要： Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.

摘要翻译： 本文提供了具有通孔电极的半导体器件及其制造方法。 所述方法可以包括提供具有彼此面对的顶表面和底表面的半导体衬底，在半导体衬底的顶表面上形成具有中空圆柱形结构的主通孔和连接到主通路的金属线，在其上形成层间绝缘层 半导体衬底的顶表面覆盖主通孔和金属线，去除半导体衬底的一部分以形成露出主通孔的底表面的一部分的通孔，并且在通孔中形成通孔 电连接到主通路。 当在平面图中观察时，主通孔的底表面与通孔的圆周重叠。

公开(公告)号：US09570377B2

公开(公告)日：2017-02-14

申请号：US14677649

申请日：2015-04-02

申请人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

发明人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.

摘要翻译： 具有通过电极覆盖有自对准保护层的半导体器件。 半导体器件包括：半导体衬底，其包括形成在其中的集成电路;半导体衬底上的覆盖集成电路的层间介质层;具有至少一个金属线的金属间电介质层，该金属线设置在层间电介质层上并电连接 到集成电路，以及垂直穿透层间电介质层和半导体衬底的贯通电极。 贯通电极包括顶部，该顶部被第一保护层盖住，该第一保护层能够防止通孔的构成物从通孔扩散。