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公开(公告)号：US5591564A
公开(公告)日：1997-01-07
申请号：US56340
申请日：1993-04-30
CPC分类号： G03F7/70008 , G03F7/2051 , G03F7/7035 , G03F7/70375
摘要： Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of Gamma-radiation. A continuous stream of such radiation, such as provided by a pellet of Cobalt-60, is collimated into a fine beam by a tapered collimator, and is gated on and off by a shutter mechanism comprising a distortable-surface device and a beam-blocking device. The fine, collimated beam converts points in a gamma-radiation-sensitive layer on a semiconductor wafer. By moving the wafer relative to the beam (or vice-versa), patterns are created in the layer of radiation-sensitive layer for further processing a layer underlying the radiation-sensitive layer.
摘要翻译： 通过伽马辐射束在半导体晶片上的增感层中产生细的亚微米线特征和图案。 这种辐射的连续流，例如由Cobalt-60的颗粒提供的，通过锥形准直器准直成细的光束，并且通过包括可变形表面装置和光束阻挡的快门机构进行门控和关闭 设备。 精细的准直光束转换半导体晶片上的伽马辐射敏感层中的点。 通过相对于光束（或反之亦然）移动晶片，在辐射敏感层中产生图案，用于进一步处理辐射敏感层下面的层。
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2.发明授权High speed shuttle for gating a radiation beam, particularly for semiconductor lithography apparatus 失效用于选通辐射束的高速快门，特别是用于半导体光刻设备
公开(公告)号：US5374974A
公开(公告)日：1994-12-20
申请号：US56239
申请日：1993-04-30
IPC分类号： G02B17/00 , G02B26/02 , G02B27/09 , G02F1/19 , G02F1/33 , G03F7/20 , G21K1/04 , G03B27/72 , G02F1/00
CPC分类号： G02B27/0994 , G02B17/00 , G02B26/02 , G02F1/19 , G03F7/70008 , G03F7/702 , G03F7/70375 , G21K1/04 , G02F1/33 , Y10S430/107 , Y10S430/108
摘要： Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of low wavelength radiation, such as X-rays or Gamma-rays. A continuous stream of such radiation is gated on and off by a shutter mechanism comprising a distortable-surface device and a beam-blocking device. The distortable-surface device is a surface acoustic wave device, a magnetostrictive device, or the like. The beam-blocking device is a beam stop, such as a knife edge, an aperture, or the like. The distortable-surface device can be selectively caused to reflect an incident beam of radiation past or into the beam-blocking device. In this manner, a continuous stream of radiation, such as from a pellet of Cobalt-60, can be quickly and precisely gated on and off to impact and to not-impact the semiconductor wafer, respectively. By moving either of the reflected beam or the semiconductor wafer, line features can be created in the sensitized layer on the semiconductor wafer.
摘要翻译： 通过诸如X射线或γ射线的低波长辐射束在半导体晶片上的敏化层中产生细微亚微米线特征和图案。 这种辐射的连续流由包括可变形表面装置和束阻挡装置的快门机构开启和关闭。 可变形表面装置是表面声波装置，磁致伸缩装置等。 光束阻挡装置是光束挡块，例如刀刃，孔等。 可变形表面装置可以选择性地反射入射束阻挡装置的入射入射光束。 以这种方式，连续的辐射流，例如来自Cobalt-60的颗粒，可以快速且精确地选通开启和关闭以冲击并且不影响半导体晶片。 通过移动反射光束或半导体晶片中的任何一个，可以在半导体晶片上的增感层中产生线特征。
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公开(公告)号：US6078502A
公开(公告)日：2000-06-20
申请号：US627411
申请日：1996-04-01
IPC分类号： H01L23/495 , H05K7/20
CPC分类号： H01L23/49568 , H01L2224/05599 , H01L2224/48091 , H01L2224/49175 , H01L2224/85399 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041
摘要： Electronic system utilizing semiconductor devices having heat dissipating leadframes are provided by using materials, such as copper, which exhibit good thermal and electrical conductivity, and arranging the lead fingers of the leadframe in a configuration which provides good thermal coupling with the surface of a semiconductor die. Micro-bump bonding techniques are employed to provide additional thermal coupling at the electrical connection point of the leadframe fingers to the die. Leadframe fingers exhibiting a high aspect ratio (height:width) are described. Leadframe fingers extending substantially beyond interior bond pads are described.
摘要翻译： 利用具有散热引线框架的半导体器件的电子系统通过使用具有良好的导热性和导电性的材料，例如铜，并且将引线框的引线布置成提供与半导体管芯的表面良好的热耦合的构造来提供 。 采用微凸块焊接技术在引线框架指状物的电连接点处提供额外的热耦合。 描述具有高纵横比（高度：宽度）的引线框指。 描述了基本上超过内部接合焊盘延伸的引线框架指状物。
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4.发明授权Process for manufacturing off-axis power branches for interior bond pad arrangements 失效用于制造用于内部接合焊盘布置的离轴电力分支的工艺
公开(公告)号：US5643830A
公开(公告)日：1997-07-01
申请号：US377211
申请日：1995-01-23
IPC分类号： H01L23/485 , H01L23/50 , H01L21/28 , H01L21/60
CPC分类号： H01L24/06 , H01L23/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/06136 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/351
摘要： A technique for improving power distribution to an semiconductor die while simultaneously reducing thermally-induced mechanical stresses on bond pads in semiconductor device assemblies is accomplished by providing the signal-carrying bond pads in a collinear arrangement along an axis of the die, and providing power-carrying bond pads in an off-axis location. The on-axis configuration of signal-carrying bond pads minimizes lateral thermal displacements of the bond pads relative to the axis, which minimizes any longitudinal, compressive end displacements of leadframe fingers or bond wires, thereby minimizing thermally induced mechanical stresses of the bond pad interfaces to the die. The positioning of the power-carrying bond pads off-axis reduces the length of internal (to the die) wiring required to connect circuitry on the die to the power-carrying bond pads. Constraining the location of the power-carrying bond pads to an interior area of the die approximately one half of the die area, and substantially centered about the axis, keeps longitudinal thermal displacements of the ends of leadframe fingers or bond wires connected to the power-carrying bond pads relatively small compared to those experienced in peripheral bond pad placement (at the die edges), and ensures shorter, more direct internal paths to circuitry on the die.
摘要翻译： 一种用于改善对半导体管芯的功率分配的同时降低半导体器件组件中的接合焊盘上的热诱导机械应力的技术是通过沿着管芯的轴线以共线布置提供信号承载接合焊盘来实现的， 在离轴位置承载接合焊盘。 信号承载接合焊盘的轴上构造使接合焊盘相对于轴的横向热位移最小化，这使引线框架指或接合线的任何纵向，压缩端移动最小化，从而最小化接合焊盘界面的热致机械应力 去死 功率承载接合垫离轴的定位减少了将管芯上的电路连接到功率承载接合焊盘所需的内部（针对芯片）布线的长度。 将功率承载接合焊盘的位置限制在模具的内部区域中大约是模具区域的一半，并且基本上围绕轴线居中，保持引线框架指状物的端部或连接到电源接合焊盘的接合线的纵向热位移， 与在外围接合焊盘放置（在模具边缘）处经历的相比，承载焊盘相对较小，并确保对芯片上的电路的更短，更直接的内部路径。
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5.发明授权
公开(公告)号：US5567655A
公开(公告)日：1996-10-22
申请号：US469086
申请日：1995-06-05
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H01L24/06 , H01L2224/0401 , H01L2224/05554 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01039 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/351 , Y10T29/49121
摘要： A technique for reducing thermally-induced mechanical stresses on bond pads in semiconductor device assemblies is accomplished by grouping (laying out) the bond pads in two parallel rows, approximately centered about a central axis of the die. Further, the bond pads of one row are axially offset from the bond pads of the other row, thereby forming a two-row zig-zag linear configuration of bond pads. The "axis" is a line preferably passing through a thermal centroid of the die. By keeping the bond pad layout close to the axis, lateral thermally-induced displacements of the bond pads relative to the axis can be minimized and controlled. Longitudinal (axial) displacements of the bond pads are accommodated by flexing, rather than compression, of conductive lines (such as leadframe fingers) connecting to the bond pads and entering the die perpendicular to the axis. By providing a staggered double-row configuration, a larger number of bond pads may be accommodated than could be accommodated in a single row, linear configuration of bond pads.
摘要翻译： 减少半导体器件组件中的接合焊盘上的热诱导机械应力的技术是通过将接合焊盘分组（布置）在两个平行的行中，大致围绕芯片的中心轴定心地实现的。 此外，一行的接合焊盘从另一行的接合焊盘轴向偏移，从而形成接合焊盘的两行之字形线性配置。 “轴”是优选通过模具的热重心的线。 通过保持接合焊盘布局靠近轴线，可以最小化和控制接合焊盘相对于轴线的横向热诱导位移。 接合焊盘的纵向（轴向）位移通过弯曲而不是压缩连接到接合焊盘并垂直于轴线进入模具的导线（例如引线框架指）来容纳。 通过提供交错的双列配置，可以容纳更多数量的接合焊盘，而不是可以容纳在单个线，接合焊盘的线性配置中。
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公开(公告)号：US5567570A
公开(公告)日：1996-10-22
申请号：US464449
申请日：1995-06-05
IPC分类号： G03F7/20
CPC分类号： G03F7/70008 , G03F7/2051 , G03F7/7035 , G03F7/70375
摘要： Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of Gamma-radiation. A continuous stream of such radiation, such as provided by a pellet of Cobalt-60, is collimated into a fine beam by a tapered collimator, and is gaged on and off by a shutter mechanism comprising a distortable-surface device and a beam-blocking device. The fine, collimated beam converts points in a gamma-radiation-sensitive layer on a semiconductor wafer. By moving the wafer relative to the beam (or vice-versa), patterns are created in the layer of radiation-sensitive layer for further processing a layer underlying the radiation-sensitive layer.
摘要翻译： 通过伽马辐射束在半导体晶片上的增感层中产生细的亚微米线特征和图案。 这种辐射的连续流，例如由Cobalt-60的颗粒提供的，通过锥形准直器准直成细的光束，并且通过包括可变形表面装置和光束阻挡的快门机构进行开/关 设备。 精细的准直光束转换半导体晶片上的伽马辐射敏感层中的点。 通过相对于光束（或反之亦然）移动晶片，在辐射敏感层中产生图案，用于进一步处理辐射敏感层下面的层。
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7.发明授权
公开(公告)号：US5554484A
公开(公告)日：1996-09-10
申请号：US359046
申请日：1994-12-19
CPC分类号： G02B27/0994 , G02B17/00 , G02B26/02 , G02F1/19 , G03F7/70008 , G03F7/702 , G03F7/70375 , G21K1/04 , G02F1/33 , Y10S430/107 , Y10S430/108
摘要： Fine, sub-micron line features and patterns are created in a radiation sensitive resist layer on a semiconductor wafer by a beam of short wavelength gamma rays. The resist layer includes photoresist which is substantially chemically inactive in response to the gamma rays. The photoresist is either doped or covered with a material that absorbs gamma rays and in response emits secondary radiation of a different wavelength, preferably photons, that is actinic with respect to the photoresist. The resist layer enables using radiation sources having better resolving ability than conventional photolithographic sources to perform near-field and direct-write lithography.
摘要翻译： 通过短波长γ射线束在半导体晶片上的辐射敏感抗蚀剂层中产生细的亚微米线特征和图案。 抗蚀剂层包括响应于γ射线基本上化学惰性的光致抗蚀剂。 光致抗蚀剂被掺杂或被吸收伽马射线的材料覆盖，并且响应于发射相对于光致抗蚀剂而光化的不同波长的次级辐射，优选光子。 抗蚀剂层能够使用具有比常规光刻源更好的分辨能力的辐射源来进行近场和直写光刻。
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公开(公告)号：US5478698A
公开(公告)日：1995-12-26
申请号：US105261
申请日：1993-08-12
IPC分类号： H01J37/317 , G03F7/20 , H01J37/30
CPC分类号： B82Y15/00 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/06341 , H01J2237/31735 , Y10S430/143 , Y10S977/855
摘要： A technique is describe for effecting very-high resolution semiconductor lithography using direct-write afocal electron-beam exposure of a sensitized wafer. A positioning mechanism and needle-like probe similar to those used in scanning-tunneling microscopy are used in conjunction with a controllable electron field emission source to produce a near-field electron beam capable of exposing an electron-beam sensitive resist on a wafer surface. Conventional e-beam resists are used. The technique can be used in conjunction with scanning-tunneling-like operation of the apparatus to record the appearance and nature of the wafer surface, thereby providing information about the location of underlying features. This location information can be used to assist in aligning the exposure patterns to existing structures in the semiconductor wafer. A multi-probe embodiment with separately controllable field emission sources provides for improved productivity by permitting contemporaneous exposure of multiple sites on a single wafer.
摘要翻译： 描述了一种技术，用于使用致敏晶片的直接写入无电子束曝光来实现非常高分辨率的半导体光刻。 与扫描隧道显微镜中使用的类似的定位机构和针状探针与可控电子场发射源结合使用以产生能够在晶片表面上暴露电子束敏感抗蚀剂的近场电子束。 使用常规电子束抗蚀剂。 该技术可以与装置的扫描隧道式操作一起使用，以记录晶片表面的外观和性质，从而提供关于底层特征的位置的信息。 该位置信息可用于帮助将曝光图案对准半导体晶片中的现有结构。 具有单独可控的场致发射源的多探针实施例通过允许在单个晶片上同时曝光多个位置来提供提高的生产率。
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公开(公告)号：US5453583A
公开(公告)日：1995-09-26
申请号：US58117
申请日：1993-05-05
IPC分类号： H01L23/485 , H05K1/00
CPC分类号： H01L24/06 , H01L2224/0401 , H01L2224/05554 , H01L2224/49171 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01039 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/351
摘要： A technique for reducing thermally-induced mechanical stresses on bond pads in semiconductor device assemblies is accomplished by grouping the bond pads into a relatively small (compared to the total area of the die) sub-area within an interior area (generally away from the periphery) of the die. By keeping the bond pad layout small (tightly grouped, or oriented along a single row, or axis), differential thermally induced displacements between the bond pads are minimized, or are controlled in one dimension. Further, the bond pads may be disposed in a small area near the center of thermal expansion (centroid) of the die or near a heat-producing circuit element to minimize absolute thermal displacements of individual bond pads from the centroid or the circuit element. Overlapping sub-area patterns may be used, and grouped bond pads may be used in conjunction with (including overlapping of) traditional die-periphery located bond pads. Other aspects involve disposing the bond pads into an elongated pattern to minimize thermal displacement primarily in one direction, and orienting a lead frame or the like to accommodate any thermal migration of the bond pads in a controlled direction.
摘要翻译： 减小半导体器件组件中的接合焊盘上的热诱导机械应力的技术是通过将接合焊盘分组成内部区域（通常远离外围部分）相对较小（与模具的总面积相比）的子区域 ）的死亡。 通过保持接合焊盘布局小（紧密组合，或沿着单个行或轴定向），接合焊盘之间的差异热诱导位移被最小化，或者被控制在一个维度上。 此外，接合焊盘可以设置在靠近管芯的热膨胀（中心）的中心附近的小区域中，或靠近发热电路元件，以最小化单个接合焊盘与质心或电路元件的绝对热位移。 可以使用重叠的子区域图案，并且分组的接合焊盘可以与传统的芯片周边定位的焊盘结合使用（包括重叠）。 其他方面涉及将接合焊盘设置成细长图案以最小化主要在一个方向上的热位移，并且定向引线框架等以适应接合焊盘在受控方向上的任何热迁移。
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公开(公告)号：US5572562A
公开(公告)日：1996-11-05
申请号：US328555
申请日：1994-10-25
CPC分类号： G03F1/22 , G03F7/7035 , G03F7/70375 , G03F7/70808 , G21K1/10
摘要： Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a source of X-ray radiation. The X-ray source emits very low wavelength radiation along a path towards a sensitized surface of a semiconductor wafer. An image mask substrate is disposed in the path of the radiation, and is provided with a patterned opaque material on a surface of a substrate thereof. The substrate is formed of beryllium, which is robust and has a thermal coefficient of expansion closely conforming to that of common image mask carriers. Further, a wide variety of opaqueing materials adhere well to the beryllium substrate, and the substrate is relatively insensitive to moisture. The image mask is spaced sufficiently close to the wafer that radiation passing through the mask forms a corresponding pattern in the surface of the wafer. For X-ray radiation, the opaqueing material is gold, tungsten, platinum, barium, lead, iridium, rhodium, or the like.
摘要翻译： 通过X射线辐射源在半导体晶片上的增感层中产生精细的亚微米线特征和图案。 X射线源沿着朝向半导体晶片的敏化表面的路径发射非常低的波长辐射。 图像掩模基板设置在辐射的路径中，并且在其基板的表面上设置有图案化的不透明材料。 基板由铍形成，其坚固且具有与普通图像掩模载体的热膨胀系数相近的热膨胀系数。 此外，各种不透明材料很好地粘附到铍基底上，并且基底对湿气相对不敏感。 图像掩模与晶片充分地间隔开，通过掩模的辐射在晶片表面形成相应的图案。 对于X射线辐射，不透明材料是金，钨，铂，钡，铅，铱，铑等。
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