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公开(公告)号：US07632088B2
公开(公告)日：2009-12-15
申请号：US11875303
申请日：2007-10-19
IPC分类号： B29C59/00
CPC分类号： B29C59/022 , B29C43/003 , B29C43/021 , B29C59/026 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B29C2043/5833 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24479
摘要： Systems and methods for forming patterns and structures in target materials are described. The method produces a pattern or structure in a target material by contacting a stamp including one or more features with a target material using a normal load sufficient for keeping the one or more features in contact with the target material, and providing a cyclic shear force in an amount sufficient to extrude the target material and form a negative relief of the one more features in the target material. The systems and methods can be used to produce a variety of articles including, but not limited to, semiconductor integrated electrical circuits, integrated optical, magnetic, mechanical circuits and microdevices.
摘要翻译： 描述了在目标材料中形成图案和结构的系统和方法。 该方法通过使用足以保持一个或多个特征与靶材料接触的正常负载使包括一个或多个特征的印模与目标材料接触来产生目标材料中的图案或结构，并且提供循环剪切力 足以挤出目标材料并形成目标材料中的一个以上特征的负浮雕的量。 这些系统和方法可用于生产各种制品，包括但不限于半导体集成电路，集成光学，磁性，机械电路和微型器件。
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公开(公告)号：US08524100B2
公开(公告)日：2013-09-03
申请号：US13003484
申请日：2009-07-03
IPC分类号： C03C15/00
CPC分类号： G03F7/11 , B81C1/00634 , B81C2201/0143 , B81C2201/0159 , B81C2201/036 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337
摘要： The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.
摘要翻译： 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。
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公开(公告)号：US20080145617A1
公开(公告)日：2008-06-19
申请号：US11875303
申请日：2007-10-19
CPC分类号： B29C59/022 , B29C43/003 , B29C43/021 , B29C59/026 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B29C2043/5833 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24479
摘要： Systems and methods for forming patterns and structures in target materials are described. The method produces a pattern or structure in a target material by contacting a stamp including one or more features with a target material using a normal load sufficient for keeping the one or more features in contact with the target material, and providing a cyclic shear force in an amount sufficient to extrude the target material and form a negative relief of the one more features in the target material. The systems and methods can be used to produce a variety of articles including, but not limited to, semiconductor integrated electrical circuits, integrated optical, magnetic, mechanical circuits and microdevices.
摘要翻译： 描述了在目标材料中形成图案和结构的系统和方法。 该方法通过使用足以保持一个或多个特征与靶材料接触的正常负载使包括一个或多个特征的印模与目标材料接触来产生目标材料中的图案或结构，并且提供循环剪切力 足以挤出目标材料并形成目标材料中的一个以上特征的负浮雕的量。 这些系统和方法可用于生产各种制品，包括但不限于半导体集成电路，集成光学，磁性，机械电路和微型器件。
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公开(公告)号：US20110189446A1
公开(公告)日：2011-08-04
申请号：US13003484
申请日：2009-07-03
CPC分类号： G03F7/11 , B81C1/00634 , B81C2201/0143 , B81C2201/0159 , B81C2201/036 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337
摘要： The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.
摘要翻译： 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。
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5.发明授权
公开(公告)号：US4848141A
公开(公告)日：1989-07-18
申请号：US178397
申请日：1988-04-06
申请人： Warren C. Oliver , John B. Pethica
发明人： Warren C. Oliver , John B. Pethica
CPC分类号： G01N3/405 , G01N2203/0286
摘要： A method for continuously measuring the stiffness and area of contact between two bodies is provided. Elastic stiffness of a junction is measured by introducing a relatively small oscillatory mechanical force at a known frequency to the junction and measuring the subsequent displacement response using AC signal-handling techniques to provide a continuous measurement proportional to the stiffness and the area of contact between the bodies, even as the area of contact changes.
摘要翻译： 提供一种用于连续测量两个物体之间的刚度和接触面积的方法。 通过将已知频率的相对较小的振荡机械力引入接头并使用AC信号处理技术来测量随后的位移响应，以提供与刚度和接触面积成比例的连续测量来测量结的弹性刚度 身体，甚至随着接触面积的变化。
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