公开(公告)号：US09045841B1

公开(公告)日：2015-06-02

申请号：US13359343

申请日：2012-01-26

Applicant: Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

Inventor： Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

IPC: C25D3/02 ,  C25D21/14

CPC classification number: C25D21/14 ,  C25D17/001 ,  C25D17/002

Abstract: In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.

Abstract translation: 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。

公开(公告)号：US08128791B1

公开(公告)日：2012-03-06

申请号：US11590413

申请日：2006-10-30

Applicant: Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

Inventor： Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

IPC: C25D21/14 ,  C25D3/38

CPC classification number: C25D21/14 ,  C25D17/001 ,  C25D17/002

Abstract: In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.

Abstract translation: 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。

公开(公告)号：US07964506B1

公开(公告)日：2011-06-21

申请号：US12075023

申请日：2008-03-06

Applicant: Thomas Ponnuswamy ,  John Sukamto ,  Jonathan Reid ,  Steve Mayer

Inventor： Thomas Ponnuswamy ,  John Sukamto ,  Jonathan Reid ,  Steve Mayer

IPC: H01L21/44

CPC classification number: H01L21/76873 ,  C25D3/38 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L2221/1089

Abstract: A two-step semiconductor electroplating process deposits copper onto wafers coated with a semi-noble metal in manner that is uniform across the wafer and free of voids after a post electrofill anneal. A seed-layer plating bath nucleates copper uniformly and conformably at a high density in a very thin film using a unique pulsed waveform. The wafer is then annealed before a second bath fills the features. The seed-layer anneal improves adhesion and stability of the semi-noble to copper interface, and the resulting copper interconnect stays void-free after a post electrofill anneal.

Abstract translation: 两步半导体电镀工艺将铜沉积在涂覆有半贵金属的晶片上，其方式在晶片上是均匀的，并且在后电沉积退火之后没有空隙。 种子层电镀槽使用独特的脉冲波形在非常薄的薄膜中以均匀且均匀的方式使铜成核铜。 然后在第二浴填充特征之前对晶片进行退火。 种子层退火提高了半贵金属对铜界面的粘附性和稳定性，并且所得的铜互连在后电沉积退火之后保持无空隙。