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公开(公告)号：US09045841B1
公开(公告)日：2015-06-02
申请号：US13359343
申请日：2012-01-26
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。
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公开(公告)号：US08128791B1
公开(公告)日：2012-03-06
申请号：US11590413
申请日：2006-10-30
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。
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公开(公告)号：US20100032310A1
公开(公告)日：2010-02-11
申请号：US12291356
申请日：2008-11-07
申请人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breiling , Glenn Ibarreta , Steven Mayer
发明人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breiling , Glenn Ibarreta , Steven Mayer
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。
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公开(公告)号：US08308931B2
公开(公告)日：2012-11-13
申请号：US12291356
申请日：2008-11-07
申请人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breling , Glenn Ibarreta , Steven Mayer
发明人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breling , Glenn Ibarreta , Steven Mayer
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。
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公开(公告)号：US20110233056A1
公开(公告)日：2011-09-29
申请号：US13154224
申请日：2011-06-06
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译： 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
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公开(公告)号：US20090107836A1
公开(公告)日：2009-04-30
申请号：US11929638
申请日：2007-10-30
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译： 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个接触件，并且其中每个接触件具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
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公开(公告)号：US08377268B2
公开(公告)日：2013-02-19
申请号：US13154224
申请日：2011-06-06
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译： 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
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公开(公告)号：US07985325B2
公开(公告)日：2011-07-26
申请号：US11929638
申请日：2007-10-30
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
IPC分类号： C25D17/06
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译： 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
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公开(公告)号：US20100116672A1
公开(公告)日：2010-05-13
申请号：US12481503
申请日：2009-06-09
申请人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
发明人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
CPC分类号： C25D17/12 , C23C18/1601 , C25D5/02 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D21/12 , C25D21/14 , C25F3/30 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/6715 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
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10.发明授权Method and apparatus for electroplating including remotely positioned second cathode 有权用于电镀的方法和装置，包括远处定位的第二阴极公开(公告)号：US07854828B2
公开(公告)日：2010-12-21
申请号：US11506054
申请日：2006-08-16
CPC分类号： C25D7/123 , C25D17/001 , C25D17/002
摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.
摘要翻译： 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流，并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线，因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。
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