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1.发明授权公开(公告)号：US07964506B1
公开(公告)日：2011-06-21
申请号：US12075023
申请日：2008-03-06
申请人： Thomas Ponnuswamy , John Sukamto , Jonathan Reid , Steve Mayer
发明人： Thomas Ponnuswamy , John Sukamto , Jonathan Reid , Steve Mayer
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/50 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L2221/1089
摘要： A two-step semiconductor electroplating process deposits copper onto wafers coated with a semi-noble metal in manner that is uniform across the wafer and free of voids after a post electrofill anneal. A seed-layer plating bath nucleates copper uniformly and conformably at a high density in a very thin film using a unique pulsed waveform. The wafer is then annealed before a second bath fills the features. The seed-layer anneal improves adhesion and stability of the semi-noble to copper interface, and the resulting copper interconnect stays void-free after a post electrofill anneal.
摘要翻译： 两步半导体电镀工艺将铜沉积在涂覆有半贵金属的晶片上，其方式在晶片上是均匀的，并且在后电沉积退火之后没有空隙。 种子层电镀槽使用独特的脉冲波形在非常薄的薄膜中以均匀且均匀的方式使铜成核铜。 然后在第二浴填充特征之前对晶片进行退火。 种子层退火提高了半贵金属对铜界面的粘附性和稳定性，并且所得的铜互连在后电沉积退火之后保持无空隙。
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公开(公告)号：US09045841B1
公开(公告)日：2015-06-02
申请号：US13359343
申请日：2012-01-26
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。
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公开(公告)号：US08128791B1
公开(公告)日：2012-03-06
申请号：US11590413
申请日：2006-10-30
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。
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公开(公告)号：US20100032310A1
公开(公告)日：2010-02-11
申请号：US12291356
申请日：2008-11-07
申请人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breiling , Glenn Ibarreta , Steven Mayer
发明人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breiling , Glenn Ibarreta , Steven Mayer
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。
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5.发明申请METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FILM IN RECESSED FEATURES 有权在连续的连续薄膜上进行多步铜镀层的方法公开(公告)号：US20110076390A1
公开(公告)日：2011-03-31
申请号：US12571162
申请日：2009-09-30
CPC分类号： C23C18/165 , C23C18/161 , C23C18/1651 , C23C18/1692 , C23C18/38 , C25D5/02 , C25D5/10 , C25D5/38 , C25D5/50 , H01L21/28556 , H01L21/2885 , H01L21/76843 , H01L21/76877 , H01L21/76883
摘要： Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit.
摘要翻译： 提供了在先进集成电路中发现的凹陷特征中的连续Ru金属膜上的多步Cu金属电镀方法。 使用连续的Ru金属膜可防止在高纵横比凹陷特征（例如沟槽和通孔）的Cu金属填充期间形成不期望的微孔，并且能够形成大的Cu金属晶粒，其包括连续的Cu金属层电镀 到连续的Ru金属膜上。 大的Cu晶粒降低了Cu填充凹陷特征的电阻率，增加了集成电路的可靠性。
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公开(公告)号：US08308931B2
公开(公告)日：2012-11-13
申请号：US12291356
申请日：2008-11-07
申请人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breling , Glenn Ibarreta , Steven Mayer
发明人： Jonathan Reid , Bryan Buckalew , Zhian He , Seyang Park , Seshasayee Varadarajan , Bryan Pennington , Thomas Ponnuswamy , Patrick Breling , Glenn Ibarreta , Steven Mayer
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。
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7.发明授权公开(公告)号：US08076241B2
公开(公告)日：2011-12-13
申请号：US12571162
申请日：2009-09-30
IPC分类号： H01L21/44
CPC分类号： C23C18/165 , C23C18/161 , C23C18/1651 , C23C18/1692 , C23C18/38 , C25D5/02 , C25D5/10 , C25D5/38 , C25D5/50 , H01L21/28556 , H01L21/2885 , H01L21/76843 , H01L21/76877 , H01L21/76883
摘要： Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit.
摘要翻译： 提供了在先进集成电路中发现的凹陷特征中的连续Ru金属膜上的多步Cu金属电镀方法。 使用连续的Ru金属膜可防止在高纵横比凹陷特征（例如沟槽和通孔）的Cu金属填充期间形成不期望的微孔，并且能够形成大的Cu金属晶粒，其包括连续的Cu金属层电镀 到连续的Ru金属膜上。 大的Cu晶粒降低了Cu填充凹陷特征的电阻率，增加了集成电路的可靠性。
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公开(公告)号：US08475644B2
公开(公告)日：2013-07-02
申请号：US12606030
申请日：2009-10-26
申请人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
发明人： Steven Mayer , Jingbin Feng , Zhian He , Jonathan Reid , Seshasayee Varadarajan
CPC分类号： C25D17/12 , C23C18/1601 , C25D5/02 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D21/12 , C25D21/14 , C25F3/30 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/6715 , H01L21/76873
摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
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公开(公告)号：US20120279864A1
公开(公告)日：2012-11-08
申请号：US13286103
申请日：2011-10-31
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。
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公开(公告)号：US20110221044A1
公开(公告)日：2011-09-15
申请号：US12723532
申请日：2010-03-12
申请人： Michal Danek , Tom Mountsier , Jonathan Reid , Juwen Gao , Aaron Fellis
发明人： Michal Danek , Tom Mountsier , Jonathan Reid , Juwen Gao , Aaron Fellis
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L21/76876 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described.
摘要翻译： 公开了用于在铜插塞和硅之间具有插入钨层的铜填充硅通孔（TSV）的装置和方法。 方法对于具有或不具有TSV特征的镶嵌处理是有用的。 钨层用作扩散阻挡层，用于铜电解填料的种子层和减少铜和硅之间CTE引起的应力的手段。 描述了钨层对硅和铜层与钨的粘附。
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