Method and apparatus for electroplating including remotely positioned second cathode
    1.
    发明授权
    Method and apparatus for electroplating including remotely positioned second cathode 有权
    用于电镀的方法和装置,包括远处定位的第二阴极

    公开(公告)号:US07854828B2

    公开(公告)日:2010-12-21

    申请号:US11506054

    申请日:2006-08-16

    IPC分类号: C25D5/18 C25D21/12

    摘要: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

    摘要翻译: 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流,并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线,因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。

    Method and apparatus for electroplating including remotely positioned second cathode
    2.
    发明申请
    Method and apparatus for electroplating including remotely positioned second cathode 有权
    用于电镀的方法和装置,包括远处定位的第二阴极

    公开(公告)号:US20100032303A1

    公开(公告)日:2010-02-11

    申请号:US11506054

    申请日:2006-08-16

    摘要: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

    摘要翻译: 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流,并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线,因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。

    Electroplating cup assembly
    4.
    发明授权
    Electroplating cup assembly 有权
    电镀杯组装

    公开(公告)号:US08377268B2

    公开(公告)日:2013-02-19

    申请号:US13154224

    申请日:2011-06-06

    IPC分类号: C25D17/06 C25D7/12

    摘要: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    摘要翻译: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底,以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构,其中电接触结构包括外环和从外环向内延伸的多个触点,并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构,其配置成使晶片位于杯中心。

    ELECTROPLATING CUP ASSEMBLY
    7.
    发明申请
    ELECTROPLATING CUP ASSEMBLY 有权
    电镀杯组装

    公开(公告)号:US20110233056A1

    公开(公告)日:2011-09-29

    申请号:US13154224

    申请日:2011-06-06

    IPC分类号: C25D17/06 F16J15/02

    摘要: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    摘要翻译: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底,以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构,其中电接触结构包括外环和从外环向内延伸的多个触点,并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构,其配置成使晶片位于杯中心。

    Closed Contact Electroplating Cup Assembly
    9.
    发明申请
    Closed Contact Electroplating Cup Assembly 有权
    闭合式电镀杯组装

    公开(公告)号:US20090107836A1

    公开(公告)日:2009-04-30

    申请号:US11929638

    申请日:2007-10-30

    IPC分类号: C25D17/06 F16J15/34

    摘要: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

    摘要翻译: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底,以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构,其中电接触结构包括外环和从外环向内延伸的多个接触件,并且其中每个接触件具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构,其配置成使晶片位于杯中心。