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    LEAK SENSOR AND LEAK SENSING SYSTEM
    1.
    发明申请
    LEAK SENSOR AND LEAK SENSING SYSTEM 有权
    泄漏传感器和泄漏传感系统

    公开(公告)号：US20070006638A1

    公开(公告)日：2007-01-11

    申请号：US11382747

    申请日：2006-05-11

    申请人： Pyoung-Ho LIM ,  Jong-Kook SONG ,  Sung-Ho JO ,  Ki-Hwan PARK ,  Tae-Gun KIM ,  Woo-Koen KIM

    发明人： Pyoung-Ho LIM ,  Jong-Kook SONG ,  Sung-Ho JO ,  Ki-Hwan PARK ,  Tae-Gun KIM ,  Woo-Koen KIM

    IPC分类号： G01M3/04

    CPC分类号： G01M3/16 ,  G01M3/18 ,  G01M3/183

    摘要： A leak sensor and a leak sensing system are provided. The leak sensor preferably includes a fluid sensing member that is capable of sensing and indicating the presence of a fluid leaked from a fluid storage or transport member. The leak sensor further preferably includes at least two wires communicating with the fluid sensing member. The wires are preferably configured to be short-circuited when they contact the fluid leaked from the fluid storage or transport member. An electrical signal corresponding to a leak sensor location can thereby be sent to a control terminal of the leak sensing system. A portion of the wires may be arranged in a cable coated with a protective material such as Teflon. The control box (or terminal) preferably receives electrical signals from a plurality of leak sensors. The electrical signals can provide information on whether the fluid has leaked and on which leak sensor or sensors have detected the fluid leak.

    摘要翻译： 提供了一种泄漏传感器和泄漏检测系统。 泄漏传感器优选地包括流体感测构件，其能够感测并指示从流体存储或运输构件泄漏的流体的存在。 泄漏传感器还优选地包括与流体感测构件连通的至少两根线。 电线优选构造成当它们接触从流体存储或运输构件泄漏的流体时短路。 因此，可以将与泄漏传感器位置对应的电信号发送到泄漏检测系统的控制端子。 电线的一部分可以布置在涂覆有诸如特氟纶之类的保护材料的电缆中。 控制箱（或端子）优选地从多个泄漏传感器接收电信号。 电信号可以提供关于流体是否泄漏的信息，并且在哪个泄漏传感器或传感器检测到流体泄漏。

    Apparatus for cleaning semiconductor substrates
    2.
    发明申请
    Apparatus for cleaning semiconductor substrates 审中-公开
    用于清洁半导体衬底的装置

    公开(公告)号：US20060059708A1

    公开(公告)日：2006-03-23

    申请号：US11222041

    申请日：2005-09-07

    申请人： Tai-Gyun Kim ,  Jong-Kook Song ,  Sung-Bae Kong ,  Han-Mil Kim

    发明人： Tai-Gyun Kim ,  Jong-Kook Song ,  Sung-Bae Kong ,  Han-Mil Kim

    IPC分类号： F26B3/00 ,  F26B25/06

    CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/673

    摘要： The present invention relates to an apparatus for cleaning a semiconductor substrate. The apparatus has a chamber including a treating room and a drying room located on an upper portion of the treating room. A supply pipe and an exhaust pipe are provided in the drying room. The supply pipe supplies isopropyl alcohol. In the exhaust pipe, a fluid in the drying room is exhausted. The exhaust pipe is arranged at both sides of the drying room in parallel to an arrangement direction of wafers. A plurality of exhaust ports are formed in each of exhaust pipes.

    摘要翻译： 本发明涉及一种清洗半导体衬底的装置。 该装置具有包括处理室和位于处理室上部的干燥室的室。 供水管和排气管设在干燥室内。 供应管提供异丙醇。 在排气管中，干燥室内的流体被排出。 排气管布置在干燥室的两侧，与晶片的排列方向平行。 在每个排气管中形成有多个排气口。

    Method of cleaning a silicon wafer using a standard cleaning solution
    4.
    发明授权
    Method of cleaning a silicon wafer using a standard cleaning solution 失效
    使用标准清洁溶液清洗硅晶片的方法

    公开(公告)号：US06153014A

    公开(公告)日：2000-11-28

    申请号：US115686

    申请日：1998-07-15

    申请人： Jong Kook Song

    发明人： Jong Kook Song

    IPC分类号： H01L21/304 ,  B08B3/08 ,  C11D3/39 ,  C11D7/06 ,  C11D11/00 ,  H01L21/306 ,  B08B3/04 ,  B08B3/10 ,  C23G1/02

    CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/06 ,  Y10S134/902

    摘要： A wafer cleaning process using standard cleaning 1 (SC1) solution includes a step of supplementing the cleaning solution with predetermined amounts of NH.sub.4 OH and H.sub.2 O.sub.2, or NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O during the cleaning of wafers with the solution so that a constant composition of the solution is maintained. After the cleaning solution is replaced with a fresh one, the solution is stabilized for a certain period of time to accomplish a complete mixing of the components therein. The present invention prolongs the useful life of standard cleaning solution and thus contributes to the efficiency of the cleaning process.

    摘要翻译： 使用标准清洗1（SC1）溶液的晶片清洗方法包括在用溶液清洗晶片期间补充具有预定量的NH 4 OH和H 2 O 2或NH 4 OH，H 2 O 2和H 2 O的清洗溶液的步骤，使得溶液的恒定组成 被维护。 在清洁溶液更换新鲜溶液后，溶液稳定一定时间以完成其中组分的完全混合。 本发明延长了标准清洁溶液的使用寿命，从而有助于清洗过程的效率。

    Nozzle for substrate treatment apparatus
    5.
    发明申请
    Nozzle for substrate treatment apparatus 审中-公开
    喷嘴用于基材处理设备

    公开(公告)号：US20070163627A1

    公开(公告)日：2007-07-19

    申请号：US11653262

    申请日：2007-01-16

    申请人： Pyoung-Ho Lim ,  Jong-Kook Song ,  Han-Mil Kim

    发明人： Pyoung-Ho Lim ,  Jong-Kook Song ,  Han-Mil Kim

    IPC分类号： B08B3/00 ,  B05B15/00 ,  A62C37/20

    CPC分类号： B05B1/20 ,  B08B3/048

    摘要： Provided are a nozzle and a related substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a supporting member disposed in the process chamber to support substrates, and a nozzle disposed in the process chamber to supply treatment fluid. The nozzle includes an outer tube along which a plurality of spraying holes are formed and which has a first end that is closed and an inner tube inserted into the outer tube through a hole formed on a second end of the outer tube.

    摘要翻译： 提供喷嘴和相关的基底处理装置。 基板处理装置包括处理室，设置在处理室中以支撑基板的支撑构件以及设置在处理室中以供应处理流体的喷嘴。 喷嘴包括外管，多个喷孔形成在该外管上，该外管具有封闭的第一端和通过形成在外管的第二端上的孔插入外管的内管。

    Leak sensor and leak sensing system
    7.
    发明授权
    Leak sensor and leak sensing system 有权
    泄漏传感器和泄漏检测系统

    公开(公告)号：US07398676B2

    公开(公告)日：2008-07-15

    申请号：US11382747

    申请日：2006-05-11

    申请人： Pyoung-Ho Lim ,  Jong-Kook Song ,  Sung-Ho Jo ,  Ki-Hwan Park ,  Tae-Gun Kim ,  Woo-Koen Kim

    发明人： Pyoung-Ho Lim ,  Jong-Kook Song ,  Sung-Ho Jo ,  Ki-Hwan Park ,  Tae-Gun Kim ,  Woo-Koen Kim

    IPC分类号： G01M3/04

    CPC分类号： G01M3/16 ,  G01M3/18 ,  G01M3/183

    摘要： A leak sensor and a leak sensing system are provided. The leak sensor preferably includes a fluid sensing member that is capable of sensing and indicating the presence of a fluid leaked from a fluid storage or transport member. The leak sensor further preferably includes at least two wires communicating with the fluid sensing member. The wires are preferably configured to be short-circuited when they contact the fluid leaked from the fluid storage or transport member. An electrical signal corresponding to a leak sensor location can thereby be sent to a control terminal of the leak sensing system. A portion of the wires may be arranged in a cable coated with a protective material such as Teflon®. The control box (or terminal) preferably receives electrical signals from a plurality of leak sensors. The electrical signals can provide information on whether the fluid has leaked and on which leak sensor or sensors have detected the fluid leak.

    摘要翻译： 提供了一种泄漏传感器和泄漏检测系统。 泄漏传感器优选地包括流体感测构件，其能够感测并指示从流体存储或运输构件泄漏的流体的存在。 泄漏传感器还优选地包括与流体感测构件连通的至少两根线。 电线优选构造成当它们接触从流体存储或运输构件泄漏的流体时短路。 因此，可以将与泄漏传感器位置对应的电信号发送到泄漏检测系统的控制端子。 电线的一部分可以布置在涂有保护材料如Teflon的电缆中。 控制箱（或端子）优选地从多个泄漏传感器接收电信号。 电信号可以提供关于流体是否泄漏的信息，并且在哪个泄漏传感器或传感器检测到流体泄漏。

    Trench isolation method of semiconductor device
    9.
    发明授权
    Trench isolation method of semiconductor device 失效
    半导体器件的沟槽隔离方法

    公开(公告)号：US6159823A

    公开(公告)日：2000-12-12

    申请号：US404209

    申请日：1999-09-23

    申请人： Jong-kook Song ,  Han-mil Kim ,  Dong-ho Ahn

    发明人： Jong-kook Song ,  Han-mil Kim ,  Dong-ho Ahn

    IPC分类号： H01L21/76 ,  H01L21/762

    CPC分类号： H01L21/76232

    摘要： A trench isolation method is provided that prevents the formation of a dent between a trench isolation region and an active region and prevents the generation of water spots during a cleaning process. In the trench isolation method, an undercut is formed in a stress-relief oxide pad pattern formed below a nitride layer pattern that defines an active region as a mask pattern. A nitride liner, which is a stress-buffer layer, is then formed around the undercut such that is conforms to the shape of the undercut. Thus, even though the stress-buffer layer is partially etched during the removal of the nitride the hard mask pattern, the stress-buffer layer is not etched to a position below the upper surface of the substrate. Also, an anti-reflection layer, which is the main source of water spots, is simultaneously removed in the formation of the undercut.

    摘要翻译： 提供了一种沟槽隔离方法，其防止在沟槽隔离区域和活性区域之间形成凹陷并且防止在清洁过程中产生水斑。 在沟槽隔离方法中，在限定有源区域作为掩模图案的氮化物层图案下方形成的应力消除氧化物焊盘图案中形成底切。 然后，在底切周围形成作为应力缓冲层的氮化物衬垫，使其符合底切的形状。 因此，即使在去除氮化物硬掩模图案期间应力缓冲层被部分蚀刻，应力缓冲层也不被蚀刻到衬底的上表面下方的位置。 此外，在底切的形成中同时去除作为水斑的主要来源的防反射层。