摘要:
A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.
摘要:
A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.
摘要:
A method of operating a memory controller comprises receiving original data from an external source, partitioning the original data into multiple elements of unit data, changing an order of at least one element of unit data to reduce the number of occurrences of a target state among the multiple units of unit data, and controlling a non-volatile memory device to program the multiple elements of unit data having the reduced number of occurrences of the target state.
摘要:
In one embodiment, the method includes overwriting a memory cell storing m-bit data to store n-bit data, where n is less than or equal to m. The memory cell has one of a first plurality of program states when storing the m-bit data, and the memory cell has one of a second plurality of program states when storing the n-bit data. The second plurality of program states include at least one program state not in the first plurality of program states.
摘要:
A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.
摘要:
Disclosed is a memory system which includes a nonvolatile memory device including a memory cell array having a plurality of word lines including a first set of word lines storing first data having a high bit error rate, and a second set of word lines storing second data having low bit error rate less than the high bit error rate, and a memory controller that during a program operation maps logical addresses for a portion of the first data and a portion of the second data onto a selected word line selected from the plurality of word lines.
摘要:
A storage device includes a nonvolatile memory device including a plurality of memory cells, the memory cells divided into a plurality of pages, and a controller configured to control the nonvolatile memory device. The storage device is configured to collect two or more write data groups to be written to two or more pages, to simultaneously perform a common write operation with the two or more pages based on the two or more write data groups, and to sequentially perform an individual write operation with each of the two or more pages based on the two or more write data groups.
摘要:
A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.
摘要:
A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.
摘要:
A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area.