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    Method of fabricating semiconductor device
    1.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08530303B2

    公开(公告)日：2013-09-10

    申请号：US13243147

    申请日：2011-09-23

    申请人： Jin-Bum Kim ,  Chul-Sung Kim ,  Yu-Gyun Shin ,  Dae-Yong Kim ,  Joon-Gon Lee ,  Kwang-Young Lee

    发明人： Jin-Bum Kim ,  Chul-Sung Kim ,  Yu-Gyun Shin ,  Dae-Yong Kim ,  Joon-Gon Lee ,  Kwang-Young Lee

    IPC分类号： H01L21/8249

    CPC分类号： H01L21/823807 ,  H01L21/823814

    摘要： A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

    摘要翻译： 制造半导体的方法包括提供具有限定在其中的第一区域和第二区域的衬底，在第一区域中形成第一栅极和第一源极和漏极区域，并在第一区域中形成第二栅极和第二源极和漏极区域 在所述第二源极和漏极区域中形成外延层，在所述第一源极和漏极区域中形成第一金属硅化物层，在所述第一区域和所述第二区域上形成层间电介质层，形成多个接触孔， 第一金属硅化物层和外延层，同时穿透层间电介质层，在暴露的外延层中形成第二金属硅化物层，并且通过填充多个接触孔形成与第一和第二金属硅化物层接触的多个触点。

    Semiconductor Device and Method of Fabricating the Same
    2.
    发明申请
    Semiconductor Device and Method of Fabricating the Same 有权
    半导体器件及其制造方法

    公开(公告)号：US20110306205A1

    公开(公告)日：2011-12-15

    申请号：US13105195

    申请日：2011-05-11

    申请人： Byung-Hak Lee ,  Yu-Gyun Shin ,  Sang-Woo Lee ,  Sun-Ghil Lee ,  Jin-Bum Kim ,  Joon-Gon Lee

    发明人： Byung-Hak Lee ,  Yu-Gyun Shin ,  Sang-Woo Lee ,  Sun-Ghil Lee ,  Jin-Bum Kim ,  Joon-Gon Lee

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/28518 ,  H01L21/823807 ,  H01L21/823814

    摘要： Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.

    摘要翻译： 形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。 在包括源极和漏极区域的衬底区域上形成镍（Ni）金属膜。 执行第一热处理工艺，包括以第一斜率从第一温度至第二温度加热包括金属膜的基板，并将包含金属膜的基板在第二温度下保持第一时间段。 然后执行第二热处理工艺，包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底，并将衬底保持在第四温度第二时间段。 第四温度与第二温度不同，第二时间段与第一时间段不同。 依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。

    Semiconductor device and method of fabricating the same
    3.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08470703B2

    公开(公告)日：2013-06-25

    申请号：US13105195

    申请日：2011-05-11

    申请人： Byung-Hak Lee ,  Yu-Gyun Shin ,  Sang-Woo Lee ,  Sun-Ghil Lee ,  Jin-Bum Kim ,  Joon-Gon Lee

    发明人： Byung-Hak Lee ,  Yu-Gyun Shin ,  Sang-Woo Lee ,  Sun-Ghil Lee ,  Jin-Bum Kim ,  Joon-Gon Lee

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/28518 ,  H01L21/823807 ,  H01L21/823814

    摘要： Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.

    摘要翻译： 形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。 在包括源极和漏极区域的衬底区域上形成镍（Ni）金属膜。 执行第一热处理工艺，包括以第一斜率从第一温度至第二温度加热包括金属膜的基板，并将包含金属膜的基板在第二温度下保持第一时间段。 然后执行第二热处理工艺，包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底，并将衬底保持在第四温度第二时间段。 第四温度与第二温度不同，第二时间段与第一时间段不同。 依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120171826A1

    公开(公告)日：2012-07-05

    申请号：US13243147

    申请日：2011-09-23

    申请人： Jin-Bum Kim ,  Chul-Sung Kim ,  Yu-Gyun Shin ,  Dae-Yong Kim ,  Joon-Gon Lee ,  Kwang-Young Lee

    发明人： Jin-Bum Kim ,  Chul-Sung Kim ,  Yu-Gyun Shin ,  Dae-Yong Kim ,  Joon-Gon Lee ,  Kwang-Young Lee

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/823814

    摘要： A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

    摘要翻译： 制造半导体的方法包括提供具有限定在其中的第一区域和第二区域的衬底，在第一区域中形成第一栅极和第一源极和漏极区域，并在第一区域中形成第二栅极和第二源极和漏极区域 在所述第二源极和漏极区域中形成外延层，在所述第一源极和漏极区域中形成第一金属硅化物层，在所述第一区域和所述第二区域上形成层间电介质层，形成多个接触孔， 第一金属硅化物层和外延层，同时穿透层间电介质层，在暴露的外延层中形成第二金属硅化物层，并且通过填充多个接触孔形成与第一和第二金属硅化物层接触的多个触点。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160133525A1

    公开(公告)日：2016-05-12

    申请号：US14873456

    申请日：2015-10-02

    申请人： Joon-Gon LEE ,  Ryuji TOMITA ,  Sang-Jin HYUN ,  Kuo Tai HUANG

    发明人： Joon-Gon LEE ,  Ryuji TOMITA ,  Sang-Jin HYUN ,  Kuo Tai HUANG

    IPC分类号： H01L21/8238 ,  H01L29/66

    CPC分类号： H01L21/823814 ,  H01L21/823821 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7833

    摘要： In a method of manufacturing a semiconductor device, a first gate structure and a second gate structure are formed on a substrate in a first region and a second region, respectively. A first semiconductor pattern including germanium is formed in the first region on the substrate. A first metal layer is formed on the substrate to cover the first semiconductor pattern. A first heat treatment process is performed such that the first semiconductor pattern and the first metal layer react with each other to form a first metal-semiconductor composite pattern in the first region and a semiconductor material of the substrate and the first metal layer react with each other to form a second metal-semiconductor composite pattern in the second region. The first metal-semiconductor composite pattern is removed from the substrate. A second metal layer is formed on the substrate to cover the second metal-semiconductor composite pattern. The second metal layer includes a material different from the first metal layer. A second heat treatment process is performed such that the substrate and the second metal layer react with each other to form a third metal-semiconductor composite pattern.

    摘要翻译： 在制造半导体器件的方法中，分别在第一区域和第二区域中的衬底上形成第一栅极结构和第二栅极结构。 在基板上的第一区域中形成包括锗的第一半导体图案。 在基板上形成第一金属层以覆盖第一半导体图案。 执行第一热处理工艺，使得第一半导体图案和第一金属层彼此反应以在第一区域中形成第一金属 - 半导体复合图案，并且基板和第一金属层的半导体材料与每个 另外在第二区域形成第二金属 - 半导体复合图案。 从衬底去除第一金属 - 半导体复合图案。 在基板上形成第二金属层以覆盖第二金属 - 半导体复合图案。 第二金属层包括与第一金属层不同的材料。 执行第二热处理工艺，使得基板和第二金属层彼此反应以形成第三金属 - 半导体复合图案。