摘要:
Passive, high density, 3d IC capacitor stacks and methods that provide the integration of capacitors and integrated circuits in a wafer to wafer bonding process that provides for the integration of capacitors formed on one wafer, alone or with active devices, with one or more integrated circuits on one or more additional wafers that may be stacked in accordance with the process. Wafer to wafer bonding is preferably by thermo-compression, with grinding and chemical mechanical polishing being used to simply aspects of the process of fabrication. Various features and alternate embodiments are disclosed.
摘要:
A method of deposition of magnetic nanocomposites. The method comprises providing an electron beam evaporation system having at least two independent hearths with independently controllable electron beams, each to melt and evaporate materials in the respective hearth, each hearth having a respective shutter for selectively controlling the deposition of the respective material in the respective hearth, placing a ferromagnetic material in a first hearth, placing an oxide in a second hearth which, when evaporated and deposited, will form an insulator, maintaining an oxygen environment in the electron beam evaporation system while evaporating the materials in the first hearth and second hearth, and depositing the magnetic nanocomposite on at least one wafer in the electron beam evaporation system. Various aspects of the method are disclosed.
摘要:
Passive, high density, 3d IC capacitor stacks and methods that provide the integration of capacitors and integrated circuits in a wafer to wafer bonding process that provides for the integration of capacitors formed on one wafer, alone or with active devices, with one or more integrated circuits on one or more additional wafers that may be stacked in accordance with the process. Wafer to wafer bonding is preferably by thermo-compression, with grinding and chemical mechanical polishing being used to simply aspects of the process of fabrication. Various features and alternate embodiments are disclosed.
摘要:
Plasma systems with magnetic filter devices to alter film deposition/etching characteristics by altering the effective magnetic field distribution. The magnetic filter devices are placed between the magnet or magnets and a target, typically a semiconductor wafer, and selected and configured to alter the magnetic field to obtain the desired processing results. For deposition, the magnetic filter may be chosen to provide more uniform deposition, to provide increased deposition rates at or adjacent the edges of a wafer to compensate for increased etching rates at the edges of a wafer in a subsequent etching or polishing process. For annealing and doping, the magnetic field may be altered to provide more uniform equivalent annealing or doping across the wafer. Various applications are disclosed.