公开(公告)号：US08169522B2

公开(公告)日：2012-05-01

申请号：US10384532

申请日：2003-03-11

Applicant: Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

Inventor： Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

IPC: H04N5/335 ,  H04N5/225

CPC classification number: G01T1/2928 ,  G01T1/247 ,  G01T1/2964 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14676 ,  H01L27/14831 ,  H04N5/32 ,  H04N5/325 ,  H04N5/349 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/376

Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits. Imaging optimization can be achieved by determining maximum and minimum charge values for pixels for display, assigning extreme grey scale or color values to the maximum and minimum charge values and allocating grey scale or color values to an individual pixel according to a sliding scale between the extreme values. Scattered radiation can be detected and discarded by comparing the detected pixel value to a threshold value related to a minimum detected charge value expected for directly incident radiation and discarding detected pixel values less than said threshold value.

Abstract translation: 成像装置包括包括像素单元阵列的半导体衬底。 每个像素单元包括用于累积由入射在像素检测器上的辐射产生的电荷的单独可寻址像素电路。 像素电路和像素检测器可以实现在单个衬底上，或者在两个衬底上结合在一起。 电荷存储装置可以是晶体管，例如作为级联放大级连接的一对FET晶体管中的一个。 成像平面可由一个成像装置或多个成像装置构成，以便形成马赛克。 成像装置可以被配置为用于某些应用的狭缝，狭缝或槽被扫描在成像平面上。 控制电子器件可以包括用于寻址单个像素电路以用于从像素电路读取累积电荷的寻址逻辑。 可以通过确定用于显示的像素的最大和最小电荷值来实现成像优化，将极大灰度或颜色值分配给最大和最小电荷值，并根据极端之间的滑动刻度将灰度或颜色值分配给单个像素 价值观。 通过将检测到的像素值与对于直接入射辐射预期的最小检测电荷值相关的阈值进行比较，并且丢弃小于所述阈值的检测像素值，可以检测和丢弃散射辐射。

公开(公告)号：US06856350B2

公开(公告)日：2005-02-15

申请号：US08871199

申请日：1997-06-09

Applicant: Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

Inventor： Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

IPC: H01L27/14 ,  G01T1/24 ,  G01T1/29 ,  H01L27/146 ,  H01L27/148 ,  H04N5/32 ,  H04N5/325 ,  H04N5/335 ,  H01L27/00

CPC classification number: G01T1/2928 ,  G01T1/247 ,  G01T1/2964 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14676 ,  H01L27/14831 ,  H04N5/32 ,  H04N5/325 ,  H04N5/349 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/376

Abstract: A semiconductor radiation imaging device includes an array of pixel cells having an array of pixel detectors which directly generate charge in response to incident radiation and a corresponding array of individually-addressable pixel circuits. Each pixel circuit is associated with a respective pixel detector for accumulating charge directly resulting from radiation incident on the pixel detector and includes threshold circuitry and charge accumulation circuitry. The threshold circuitry is configured to discard radiation hits on the pixel detector outside a predetermined threshold range, and the charge accumulation circuit is configured to accumulate charge directly resulting from a plurality of successive radiation hits on the respective pixel detector within the predetermined threshold range.

Abstract translation: 半导体辐射成像装置包括具有像素检测器阵列的像素单元的阵列，所述像素单元阵列响应于入射辐射而直接产生电荷，以及相应的单独寻址的像素电路阵列。 每个像素电路与相应的像素检测器相关联，用于累积由入射在像素检测器上的辐射直接产生的电荷，并且包括阈值电路和电荷累积电路。 阈值电路被配置为丢弃在预定阈值范围之外的像素检测器上的辐射命中，并且电荷累积电路被配置为在预定阈值范围内累积由相应像素检测器上的多个连续辐射命中直接产生的电荷。

公开(公告)号：US5812191A

公开(公告)日：1998-09-22

申请号：US454789

申请日：1995-05-31

Applicant: Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

Inventor： Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

IPC: H01L27/14 ,  G01T1/24 ,  G01T1/29 ,  H01L27/146 ,  H01L27/148 ,  H04N5/32 ,  H04N5/325 ,  H04N5/335 ,  H04N3/14 ,  G01J1/02 ,  H05G1/64

CPC classification number: G01T1/2928 ,  G01T1/247 ,  G01T1/2964 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14676 ,  H01L27/14831 ,  H04N3/1512 ,  H04N3/155 ,  H04N3/1568 ,  H04N3/1587 ,  H04N3/1593 ,  H04N5/32 ,  H04N5/325 ,  H04N5/335

Abstract: A semiconductor high-energy radiation imaging device having an array of pixel cells includes a semiconductor detector substrate and a semiconductor readout substrate. The semiconductor detector substrate includes an array of pixel detector cells, each of which directly generates charge in response to incident high-energy radiation. The semiconductor readout substrate includes an array of individually addressable pixel circuits, each of which is connected to a corresponding pixel detector cell to form a pixel cell. Each pixel circuit includes charge accumulation circuitry for accumulating charge directly resulting from high-energy radiation incident on a corresponding pixel detector cell, readout circuitry for reading the accumulated charge, and reset circuitry for resetting the charge accumulation circuitry. The charge accumulation circuitry has a charge storage capacity sufficient to store at least 1.8 million electrons for accumulating charge directly resulting from a plurality of successive high-energy radiation hits on the corresponding pixel dectector cell prior to readout or resetting of the charge accumulation circuitry.

Abstract translation: 具有像素单元阵列的半导体高能辐射成像装置包括半导体检测器基板和半导体读出基板。 半导体检测器基板包括像素检测器单元的阵列，每个像素检测器单元响应于入射的高能量辐射而直接产生电荷。 半导体读出基板包括单独可寻址像素电路的阵列，每个阵列连接到相应的像素检测器单元以形成像素单元。 每个像素电路包括用于累积由入射在相应的像素检测器单元上的高能量辐射而产生的电荷的电荷累积电路，用于读取累积电荷的读出电路和用于复位电荷累积电路的复位电路。 电荷累积电路具有足以存储至少180万个电子的电荷存储容量，用于在电荷累积电路的读出或复位之前由对应的像素检测器单元上的多个连续的高能量辐射命中直接产生电荷。