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    Imaging devices, systems and methods
    1.
    发明授权
    Imaging devices, systems and methods 有权
    成像设备，系统和方法

    公开(公告)号：US08169522B2

    公开(公告)日：2012-05-01

    申请号：US10384532

    申请日：2003-03-11

    Applicant: Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

    Inventor： Risto Olavi Orava ,  Jouni Ilari Pyyhtia ,  Tom Gunnar Schulman ,  Miltiadis Evangelos Sarakinos ,  Konstantinos Evangelos Spartiotis

    IPC: H04N5/335 ,  H04N5/225

    CPC classification number: G01T1/2928 ,  G01T1/247 ,  G01T1/2964 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14676 ,  H01L27/14831 ,  H04N5/32 ,  H04N5/325 ,  H04N5/349 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/376

    Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits. Imaging optimization can be achieved by determining maximum and minimum charge values for pixels for display, assigning extreme grey scale or color values to the maximum and minimum charge values and allocating grey scale or color values to an individual pixel according to a sliding scale between the extreme values. Scattered radiation can be detected and discarded by comparing the detected pixel value to a threshold value related to a minimum detected charge value expected for directly incident radiation and discarding detected pixel values less than said threshold value.

    Abstract translation: 成像装置包括包括像素单元阵列的半导体衬底。 每个像素单元包括用于累积由入射在像素检测器上的辐射产生的电荷的单独可寻址像素电路。 像素电路和像素检测器可以实现在单个衬底上，或者在两个衬底上结合在一起。 电荷存储装置可以是晶体管，例如作为级联放大级连接的一对FET晶体管中的一个。 成像平面可由一个成像装置或多个成像装置构成，以便形成马赛克。 成像装置可以被配置为用于某些应用的狭缝，狭缝或槽被扫描在成像平面上。 控制电子器件可以包括用于寻址单个像素电路以用于从像素电路读取累积电荷的寻址逻辑。 可以通过确定用于显示的像素的最大和最小电荷值来实现成像优化，将极大灰度或颜色值分配给最大和最小电荷值，并根据极端之间的滑动刻度将灰度或颜色值分配给单个像素 价值观。 通过将检测到的像素值与对于直接入射辐射预期的最小检测电荷值相关的阈值进行比较，并且丢弃小于所述阈值的检测像素值，可以检测和丢弃散射辐射。

    Semiconductor imaging device and method for producing same
    4.
    发明授权
    Semiconductor imaging device and method for producing same 失效
    半导体成像装置及其制造方法

    公开(公告)号：US06509203B2

    公开(公告)日：2003-01-21

    申请号：US08949734

    申请日：1997-10-14

    Applicant: Konstantinos Evangelos Spartiotis ,  Miltiadis Evangelos Sarakinos ,  Tom Gunnar Schulman

    Inventor： Konstantinos Evangelos Spartiotis ,  Miltiadis Evangelos Sarakinos ,  Tom Gunnar Schulman

    IPC: H01L2100

    CPC classification number: H01L27/14659 ,  G01T1/241 ,  G01T1/244 ,  H01L27/14623

    Abstract: In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 &mgr;m and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 &mgr;m. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.

    Abstract translation: 在半导体成像装置中，使基板的边缘与最边缘的电荷收集接触点之间的距离尽可能地小，优选小于500μm和/或小于基板厚度的1/3。 附加地或替代地，钝化层被放置在接触件的最边缘部分和衬底表面和/或与表面相邻的场整形导体之间。 场成形区域也可以布置在衬底的边缘的外侧，并且可以环绕每个检测器装置，或者它可以围绕若干器件的布置。 在这种布置中，相邻检测器之间的间距应小于500μm。 屏蔽还可用于屏蔽每个检测器的边缘或几个检测器的布置的边缘区域与入射辐射。 这样的布置可以减少在检测器边缘处由强场不均匀性引起的边缘图像劣化的影响。

    Hybrid semiconductor imaging device having plural readout substrates
    5.
    发明授权
    Hybrid semiconductor imaging device having plural readout substrates 失效
    具有多个读出基板的混合半导体成像装置

    公开(公告)号：US06323475B1

    公开(公告)日：2001-11-27

    申请号：US09095152

    申请日：1998-06-10

    Applicant: Konstantinos Evangelos Spartiotis ,  Jouni Hari Pyyhtiä ,  Miltiadis Evangelos Sarakinos

    Inventor： Konstantinos Evangelos Spartiotis ,  Jouni Hari Pyyhtiä ,  Miltiadis Evangelos Sarakinos

    IPC: H01L2700

    CPC classification number: H01L27/1469 ,  H01L27/14634 ,  H01L27/1465 ,  H01L27/14658 ,  H04N5/32

    Abstract: An imaging device includes one detector substrate with a plurality of readout substrates connected thereto. The detector substrate has a bias contact on a first surface and a number of detector cell contacts on a second surface. The readout substrate includes a plurality of readout circuits. The readout substrates are all mechanically connected to the detector substrate with the readout circuits electrically connected to respective detector cell contacts. To allow for areas of the readout substrates with no readout circuits or gaps between readout circuits, conductive tracks lead from selected detector positions to offset readout circuit position.

    Abstract translation: 一种成像装置包括具有连接到其上的多个读出基板的一个检测器基板。 检测器基板在第一表面上具有偏置接触，并且在第二表面上具有多个检测器单元触点。 读出基板包括多个读出电路。 读出基板全部机械地连接到检测器基板，读出电路电连接到相应的检测器单元触点。 为了允许读出基板的区域在读出电路之间没有读出电路或间隙，导电轨迹从选定的检测器位置引导到偏移读出电路位置。

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