公开(公告)号：US08647925B2

公开(公告)日：2014-02-11

申请号：US12792975

申请日：2010-06-03

申请人： Wen-Chih Chiou ,  Shau-Lin Shue ,  Weng-Jin Wu ,  Ju-Pin Hung

发明人： Wen-Chih Chiou ,  Shau-Lin Shue ,  Weng-Jin Wu ,  Ju-Pin Hung

IPC分类号： H01L21/00

CPC分类号： H01L21/76898 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/14181 ,  H01L2224/81001 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A wafer is provided with a through via extending a portion of a substrate, an interconnect structure electrically connecting the through via, and a polyimide layer formed on the interconnect structure. Surface modification of the polyimide layer is the formation of a thin dielectric film on the polyimide layer by coating, plasma treatment, chemical treatment, or deposition methods. The thin dielectric film is adhered strongly to the polyimide layer, which can reduce the adhesion between the wafer surface and an adhesive layer formed in subsequent carrier attaching process.

摘要翻译： 晶片设置有延伸基板的一部分的通孔，连接通孔的互连结构和形成在互连结构上的聚酰亚胺层。 聚酰亚胺层的表面改性是通过涂覆，等离子体处理，化学处理或沉积方法在聚酰亚胺层上形成薄的电介质膜。 薄的电介质膜牢固地粘附到聚酰亚胺层，这可以降低晶片表面和随后的载体附接过程中形成的粘合剂层之间的粘合性。

公开(公告)号：US20110081749A1

公开(公告)日：2011-04-07

申请号：US12792975

申请日：2010-06-03

申请人： Wen-Chih CHIOU ,  Shau-Lin SHUE ,  Weng-Jin WU ,  Ju-Pin HUNG

发明人： Wen-Chih CHIOU ,  Shau-Lin SHUE ,  Weng-Jin WU ,  Ju-Pin HUNG

IPC分类号： H01L21/768 ,  H01L21/50

CPC分类号： H01L21/76898 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/14181 ,  H01L2224/81001 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A wafer is provided with a through via extending a portion of a substrate, an interconnect structure electrically connecting the through via, and a polyimide layer formed on the interconnect structure. Surface modification of the polyimide layer is the formation of a thin dielectric film on the polyimide layer by coating, plasma treatment, chemical treatment, or deposition methods. The thin dielectric film is adhered strongly to the polyimide layer, which can reduce the adhesion between the wafer surface and an adhesive layer formed in subsequent carrier attaching process.

摘要翻译： 晶片设置有延伸基板的一部分的通孔，连接通孔的互连结构和形成在互连结构上的聚酰亚胺层。 聚酰亚胺层的表面改性是通过涂覆，等离子体处理，化学处理或沉积方法在聚酰亚胺层上形成薄的电介质膜。 薄的电介质膜牢固地粘附到聚酰亚胺层，这可以降低晶片表面和随后的载体附接过程中形成的粘合剂层之间的粘合性。