公开(公告)号：US09012885B2

公开(公告)日：2015-04-21

申请号：US13518809

申请日：2010-12-27

申请人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

发明人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

IPC分类号： H01L29/06 ,  H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

摘要翻译： 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

公开(公告)号：US20120298964A1

公开(公告)日：2012-11-29

申请号：US13518809

申请日：2010-12-27

申请人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

发明人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

IPC分类号： H01L29/15 ,  H01L29/06

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

摘要翻译： 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

公开(公告)号：US20120298951A1

公开(公告)日：2012-11-29

申请号：US13386861

申请日：2010-07-22

申请人： Tobias Meyer ,  Matthias Peter ,  Rainer Butendeich ,  Tetsuya Taki ,  Juergen Off ,  Alexander Walter

发明人： Tobias Meyer ,  Matthias Peter ,  Rainer Butendeich ,  Tetsuya Taki ,  Juergen Off ,  Alexander Walter

IPC分类号： H01L33/04

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/34 ,  H01S5/347

摘要： An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5). The quantum well structure consists of following elements: one single quantum well layer 31 or a layer stack (3), which consists of a plurality of quantum well layers (31) and at least one barrier layer (32), one barrier layer (32) being arranged between each pair of successive quantum wall layers (31), which barrier layer adjoins both quantum wall layers (31); an n-side terminating layer (2), which adjoins the n-conducting layer (1) and the single quantum well layer (31) or the layer stack (3); and a p-side terminating layer (4), which is arranged between the p-conducting layer (5) and the single quantum well layer (31) or the layer stack (3) and adjoins the layer stack (3) or the single quantum well layer (31).

摘要翻译： 提供了一种光电半导体体，其包含由第一组分和与第一组分不同的第二组分组成的半导体材料。 半导体本体包括量子阱结构，其布置在n导电层（1）和p导电层（5）之间。 量子阱结构由以下元件组成：由多个量子阱层（31）和至少一个阻挡层（32），一个势垒层（32）和一个势垒层（32）构成的单个量子阱层31或层堆叠 ）布置在每对连续的量子壁层（31）之间，该阻挡层邻接量子壁层（31）; 邻接n导电层（1）和单量子阱层（31）或层叠体（3）的n侧端接层（2）; 和p侧端接层（4），其布置在导电层（5）和单量子阱层（31）或层堆叠（3）之间并且邻接层堆叠（3）或单层 量子阱层（31）。