公开(公告)号：US09012885B2

公开(公告)日：2015-04-21

申请号：US13518809

申请日：2010-12-27

申请人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

发明人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

IPC分类号： H01L29/06 ,  H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

摘要翻译： 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

公开(公告)号：US20120298964A1

公开(公告)日：2012-11-29

申请号：US13518809

申请日：2010-12-27

申请人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

发明人： Matthias Peter ,  Tobias Meyer ,  Alexander Walter ,  Tetsuya Taki ,  Juergen Off ,  Rainer Butendeich ,  Joachim Hertkorn

IPC分类号： H01L29/15 ,  H01L29/06

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/14 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

摘要翻译： 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。

公开(公告)号：US08581236B2

公开(公告)日：2013-11-12

申请号：US13383495

申请日：2010-06-30

申请人： Matthias Peter ,  Tobias Meyer ,  Jürgen Off ,  Tetsuya Taki ,  Joachim Hertkorn ,  Matthias Sabathil ,  Ansgar Laubsch ,  Andreas Biebersdorf

发明人： Matthias Peter ,  Tobias Meyer ,  Jürgen Off ,  Tetsuya Taki ,  Joachim Hertkorn ,  Matthias Sabathil ,  Ansgar Laubsch ,  Andreas Biebersdorf

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.

摘要翻译： 电泵浦光电子半导体芯片包括至少两个包含InGaN的辐射活性量子阱或由其组成。 光电子半导体芯片包括至少两个包括AlGaN或其组成的覆盖层。 每个覆盖层被精确地分配给辐射有源量子阱中的一个。 覆盖层各自位于相关联的辐射活性量子阱的p侧上。 辐射有源量子阱与相关覆盖层之间的距离为1.5nm以下。

公开(公告)号：US20120161103A1

公开(公告)日：2012-06-28

申请号：US13383495

申请日：2010-06-30

申请人： Matthias Peter ,  Tobias Meyer ,  Jürgen Off ,  Tetsuya Taki ,  Joachim Hertkorn ,  Matthias Sabathil ,  Ansgar Laubsch ,  Andreas Biebersdorf

发明人： Matthias Peter ,  Tobias Meyer ,  Jürgen Off ,  Tetsuya Taki ,  Joachim Hertkorn ,  Matthias Sabathil ,  Ansgar Laubsch ,  Andreas Biebersdorf

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.

摘要翻译： 电泵浦光电子半导体芯片包括至少两个包含InGaN的辐射活性量子阱或由其组成。 光电子半导体芯片包括至少两个包括AlGaN或其组成的覆盖层。 每个覆盖层被精确地分配给辐射有源量子阱中的一个。 覆盖层各自位于相关联的辐射活性量子阱的p侧上。 辐射有源量子阱与相关覆盖层之间的距离为1.5nm以下。

公开(公告)号：US20140057417A1

公开(公告)日：2014-02-27

申请号：US14002968

申请日：2012-02-15

申请人： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Joachim Hertkorn ,  Tetsuya Taki ,  Rainer Butendeich

发明人： Christian Leirer ,  Anton Vogl ,  Andreas Biebersdorf ,  Joachim Hertkorn ,  Tetsuya Taki ,  Rainer Butendeich

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L21/02513 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/03044 ,  H01L31/03529 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/24

摘要： A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner.

摘要翻译： 公开了一种制造光电半导体芯片的方法。 在外延装置中提供生长衬底。 通过在生长衬底上的外延沉积至少一个中间层。 在远离生长衬底的中间层的侧面上产生面向生长衬底的结构化表面。 活性层通过外延沉积在结构化表面上。 结构化表面在外延装置中产生，并且活性层至少在一些区域中以保形方式或至少在某些部分基本上以共形方式结构化结构化表面。

公开(公告)号：US20140203413A1

公开(公告)日：2014-07-24

申请号：US13883730

申请日：2011-12-16

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Härle ,  Karl Engl ,  Joachim Hertkorn ,  Tetsuya Taki

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Härle ,  Karl Engl ,  Joachim Hertkorn ,  Tetsuya Taki

IPC分类号： H01L29/02 ,  H01L21/78 ,  H01L21/02

CPC分类号： H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

摘要翻译： 复合衬底具有载体和效用层。 实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。 其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。

公开(公告)号：US20130264598A1

公开(公告)日：2013-10-10

申请号：US13878212

申请日：2011-09-30

申请人： Joachim Hertkorn ,  Tetsuya Taki ,  Jürgen Off

发明人： Joachim Hertkorn ,  Tetsuya Taki ,  Jürgen Off

IPC分类号： H01L33/24

CPC分类号： H01L33/24 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.

摘要翻译： 一种方法可以用于制造基于氮化物化合物半导体材料并且包括微结构化外表面的半导体层序列。 该方法具有以下步骤：A）在衬底上生长半导体层序列的至少一个第一半导体层; B）在第一半导体层上施加耐蚀刻层; C）在步骤B）中获得的层序列上生长至少一个另外的半导体层; D）从衬底分离半导体层序列，至少部分地去除半导体层序列的分离区; E）通过蚀刻装置蚀刻所获得的半导体层序列的分离表面，使得进行第一半导体层的微结构化并形成微结构的外表面。

公开(公告)号：US09123528B2

公开(公告)日：2015-09-01

申请号：US13883730

申请日：2011-12-16

申请人： Johannes Baur ,  Berthold Hahn ,  Karl Engl ,  Ann-Kathrin Haerle ,  Jakob Johannes Haerle ,  Johanna Magdalena Haerle ,  Joachim Hertkorn ,  Tetsuya Taki

发明人： Johannes Baur ,  Berthold Hahn ,  Karl Engl ,  Volker Haerle ,  Joachim Hertkorn ,  Tetsuya Taki

IPC分类号： H01L29/02 ,  H01L21/78 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08

CPC分类号： H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

摘要翻译： 复合衬底具有载体和效用层。 实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。 其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。

公开(公告)号：US09373747B2

公开(公告)日：2016-06-21

申请号：US14344573

申请日：2012-09-12

申请人： Joachim Hertkorn ,  Tetsuya Taki ,  Karl Engl ,  Johannes Baur ,  Berthold Hahn ,  Volker Haerle ,  Ann-Kathrin Haerle ,  Jakob Johannes Haerle ,  Johanna Magdalena Haerle

发明人： Joachim Hertkorn ,  Tetsuya Taki ,  Karl Engl ,  Johannes Baur ,  Berthold Hahn ,  Volker Haerle

IPC分类号： H01L33/00 ,  H01L21/762 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC分类号： H01L33/0079 ,  H01L21/76254 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A method for producing an optoelectronic component is provided. A transfer layer, containing InxGa1-xN with 0 x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.

摘要翻译： 提供了一种制造光电子元件的方法。 将含有0 x的InyGa1-yN的另一转印层生长到预先生长的转印层上，将离子注入到另外的转印层中以形成分离区，施加另外的载体衬底， 并且通过热处理分离进一步的转印层。 随后，将含有活性层的半导体层序列生长到背离另外的载体衬底的另一转印层的表面上。

公开(公告)号：US09337388B2

公开(公告)日：2016-05-10

申请号：US13878212

申请日：2011-09-30

申请人： Joachim Hertkorn ,  Tetsuya Taki ,  Jürgen Off

发明人： Joachim Hertkorn ,  Tetsuya Taki ,  Jürgen Off

IPC分类号： H01L21/00 ,  H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L33/16

CPC分类号： H01L33/24 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.

摘要翻译： 一种方法可以用于制造基于氮化物化合物半导体材料并且包括微结构化外表面的半导体层序列。 该方法具有以下步骤：A）在衬底上生长半导体层序列的至少一个第一半导体层; B）在第一半导体层上施加耐蚀刻层; C）在步骤B）中获得的层序列上生长至少一个另外的半导体层; D）从衬底分离半导体层序列，至少部分地去除半导体层序列的分离区; E）通过蚀刻装置蚀刻所获得的半导体层序列的分离表面，使得进行第一半导体层的微结构化并形成微结构化的外表面。