公开(公告)号：US20110073801A1

公开(公告)日：2011-03-31

申请号：US12926615

申请日：2010-11-30

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In LA ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In LA ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C09K13/08

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

公开(公告)号：US20120007019A1

公开(公告)日：2012-01-12

申请号：US13236880

申请日：2011-09-20

申请人： Jung In LA ,  Myung Kook PARK ,  Ho Seok YANG

发明人： Jung In LA ,  Myung Kook PARK ,  Ho Seok YANG

IPC分类号： C09K13/08

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31111

摘要： A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

摘要翻译： 湿式蚀刻溶液包括以蚀刻溶液重量计约0.1％至约3％的量的氟化氢，蚀刻溶液的约10重量％至约40重量％的无机酸，无机酸为 硝酸，硫酸和/或盐酸中的一种或多种，​​蚀刻溶液重量的约0.0001％至约5％的非离子表面活性剂，表面活性剂包括烷基酚乙氧基化物和/或铵的一种或多种 月桂基硫酸盐和水。

公开(公告)号：US20080121622A1

公开(公告)日：2008-05-29

申请号：US11771896

申请日：2007-06-29

申请人： Dong-Won HWANG ,  Kook-Joo KIM ,  Jung-In LA ,  Pil-Kwon JUN ,  Seung-Ki CHAE ,  Yang-Koo LEE

发明人： Dong-Won HWANG ,  Kook-Joo KIM ,  Jung-In LA ,  Pil-Kwon JUN ,  Seung-Ki CHAE ,  Yang-Koo LEE

IPC分类号： C09K13/08 ,  C03C15/00

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

摘要翻译： 在用于蚀刻氧化硅的组合物和使用该组合物形成接触孔的方法中，组合物包含约0.01至约2重量％的二氟化铵，约2至约35重量％的有机酸 ，约0.05至约1重量％的无机酸，以及剩余的低极性有机溶剂。 组合物可以减少在用于形成接触孔的蚀刻工艺中暴露的金属硅化物图案的损伤。

公开(公告)号：US08043525B2

公开(公告)日：2011-10-25

申请号：US11892076

申请日：2007-08-20

申请人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

发明人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

IPC分类号： C09K13/00

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31111

摘要： A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

摘要翻译： 湿式蚀刻溶液包括以蚀刻溶液重量计约0.1％至约3％的量的氟化氢，蚀刻溶液的约10重量％至约40重量％的无机酸，无机酸为 硝酸，硫酸和/或盐酸中的一种或多种，​​表面活性剂的量为蚀刻溶液重量的约0.0001％至约5％，非离子表面活性剂包括一种或多种烷基酚乙氧基化物和/或铵 月桂基硫酸盐和水。

公开(公告)号：US07879736B2

公开(公告)日：2011-02-01

申请号：US11771896

申请日：2007-06-29

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

摘要翻译： 在用于蚀刻氧化硅的组合物和使用该组合物形成接触孔的方法中，组合物包含约0.01至约2重量％的二氟化铵，约2至约35重量％的有机酸 ，约0.05至约1重量％的无机酸，以及剩余的低极性有机溶剂。 组合物可以减少在用于形成接触孔的蚀刻工艺中暴露的金属硅化物图案的损伤。

公开(公告)号：US20080041823A1

公开(公告)日：2008-02-21

申请号：US11892076

申请日：2007-08-20

申请人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

发明人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

IPC分类号： C09K13/08 ,  C03C15/00

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31111

摘要： A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

摘要翻译： 湿式蚀刻溶液包括以蚀刻溶液重量计约0.1％至约3％的量的氟化氢，蚀刻溶液的约10重量％至约40重量％的无机酸，无机酸为 一种或多种硝酸，硫酸和/或盐酸，非离子表面活性剂，其量为蚀刻溶液重量的约0.0001％至约5％，非离子表面活性剂包括一种或多种烷基酚乙氧基化物和/或 月桂基硫酸铵和水。