公开(公告)号：US20110073801A1

公开(公告)日：2011-03-31

申请号：US12926615

申请日：2010-11-30

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In LA ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In LA ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C09K13/08

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

公开(公告)号：US07879736B2

公开(公告)日：2011-02-01

申请号：US11771896

申请日：2007-06-29

申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

摘要翻译： 在用于蚀刻氧化硅的组合物和使用该组合物形成接触孔的方法中，组合物包含约0.01至约2重量％的二氟化铵，约2至约35重量％的有机酸 ，约0.05至约1重量％的无机酸，以及剩余的低极性有机溶剂。 组合物可以减少在用于形成接触孔的蚀刻工艺中暴露的金属硅化物图案的损伤。

公开(公告)号：US20070000523A1

公开(公告)日：2007-01-04

申请号：US11454829

申请日：2006-06-19

申请人： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

发明人： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

IPC分类号： B08B3/04

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0023 ,  H01L27/10885

摘要： A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.

摘要翻译： 公开了一种清洁组合物。 该清洗组合物含有约80-99.8999重量％的氟化铵水溶液，约0.1-5重量％的缓冲剂和约0.0001-15重量％的腐蚀抑制剂。 还公开了一种制备清洁组合物的方法，使用清洁组合物清洁基材的方法，以及使用该清洁组合物制造半导体器件的方法。

公开(公告)号：US20120196439A1

公开(公告)日：2012-08-02

申请号：US13289107

申请日：2011-11-04

申请人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

发明人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

IPC分类号： H01L21/28

CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

公开(公告)号：US08455359B2

公开(公告)日：2013-06-04

申请号：US13289107

申请日：2011-11-04

申请人： Kook-Joo Kim ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

发明人： Kook-Joo Kim ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

公开(公告)号：US07608540B2

公开(公告)日：2009-10-27

申请号：US11406243

申请日：2006-04-19

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： H01L29/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC分类号： C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

摘要翻译： 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US20060287207A1

公开(公告)日：2006-12-21

申请号：US11406243

申请日：2006-04-19

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C11D7/32

CPC分类号： C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

摘要翻译： 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R 1是羟基或羟烷基，R 2是氢原子或羟烷基。

公开(公告)号：US07687448B2

公开(公告)日：2010-03-30

申请号：US12564077

申请日：2009-09-22

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC分类号： C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

摘要翻译： 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US07985297B2

公开(公告)日：2011-07-26

申请号：US12500141

申请日：2009-07-09

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

IPC分类号： H01L21/02

CPC分类号： C11D11/0052 ,  C11D7/08 ,  C11D7/28 ,  C11D7/3209

摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

摘要翻译： 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。

公开(公告)号：US20100009883A1

公开(公告)日：2010-01-14

申请号：US12500141

申请日：2009-07-09

申请人： Jung-Dae PARK ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

发明人： Jung-Dae PARK ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

IPC分类号： C11D3/20

CPC分类号： C11D11/0052 ,  C11D7/08 ,  C11D7/28 ,  C11D7/3209

摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

摘要翻译： 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。