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8 条记录 (耗时 0.03 秒)

    Method of removing a low-k layer and method of recycling a wafer using the same
    3.
    发明申请
    Method of removing a low-k layer and method of recycling a wafer using the same 审中-公开
    去除低k层的方法和使用该层的回收晶片的方法

    公开(公告)号：US20060154484A1

    公开(公告)日：2006-07-13

    申请号：US11330803

    申请日：2006-01-11

    申请人： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

    发明人： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31133 ,  H01L21/31053

    摘要： In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.

    摘要翻译： 在一个实施例中，描述了以低成本去除低k层的方法以及使用其降低晶片的方法。 使用氟化氢水溶液对形成在物体上的低k层进行氟化处理，从物体除去低k层。 低k层中的Si-O键由于氟化氢水溶液而破裂，使得低k层容易从晶片上去除。 因此，可以以低成本回收晶片，从而提高半导体的制造生产率。

    Method of forming contact hole and method of manufacturing semiconductor memory device using the same
    5.
    发明申请
    Method of forming contact hole and method of manufacturing semiconductor memory device using the same 审中-公开
    形成接触孔的方法和使用其制造半导体存储器件的方法

    公开(公告)号：US20090130842A1

    公开(公告)日：2009-05-21

    申请号：US12289035

    申请日：2008-10-17

    申请人： Dong-Won Hwang ,  Kook-Joo Kim ,  Yang-koo Lee ,  Hun-Jung Yi

    发明人： Dong-Won Hwang ,  Kook-Joo Kim ,  Yang-koo Lee ,  Hun-Jung Yi

    IPC分类号： H01L21/4763 ,  H01L21/302

    CPC分类号： H01L27/10814 ,  H01L21/31111 ,  H01L21/76804 ,  H01L27/10817 ,  H01L27/10855

    摘要： A contact hole forming method and a method of manufacturing semiconductor device using the same may include forming a layer on a substrate; anisotropically etching the layer to form a dummy contact hole exposing the substrate; isotropically etching a sidewall of the dummy contact hole to form a contact hole by alternatively and repeatedly supplying an etching solution including a fluoride salt in a low-polarity organic solvent and deionized water to the dummy contact hole. The methods increase reliability of semiconductor memory devices.

    摘要翻译： 接触孔形成方法和使用其的半导体器件的制造方法可以包括在衬底上形成层; 各向异性地蚀刻该层以形成暴露该衬底的虚拟接触孔; 各向同性地蚀刻虚拟接触孔的侧壁，通过交替地反复地提供包含氟化物盐在低极性有机溶剂中的蚀刻溶液和去离子水形成接触孔到虚拟接触孔。 这些方法提高了半导体存储器件的可靠性。

    Etching solution for silicon oxide method of manufacturing a semiconductor device using the same
    6.
    发明授权
    Etching solution for silicon oxide method of manufacturing a semiconductor device using the same 失效
    用于制造使用其的半导体器件的氧化硅蚀刻方法

    公开(公告)号：US07351667B2

    公开(公告)日：2008-04-01

    申请号：US11580937

    申请日：2006-10-16

    申请人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

    发明人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

    IPC分类号： H01L21/469

    CPC分类号： H01L27/10855 ,  H01L21/31111 ,  H01L21/76816

    摘要： An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

    摘要翻译： 在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。 蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。 蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。