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    POLISHING COMPOSITION AND POLISHING METHOD
    1.
    发明申请
    POLISHING COMPOSITION AND POLISHING METHOD 审中-公开
    抛光组合物和抛光方法

    公开(公告)号：US20080104893A1

    公开(公告)日：2008-05-08

    申请号：US11877984

    申请日：2007-10-24

    申请人： Junhui OH

    发明人： Junhui OH

    IPC分类号： H01L21/304

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： To provide a polishing composition suitable for use to polish a silicon dioxide film, particularly for use to polish a silicon dioxide film formed on a silicon substrate or a polysilicon film, and a polishing method by means of such a polishing composition. The polishing composition of the present invention comprises a colloidal silica having a degree of association of more than 1, and an acid, and has a pH of from 1 to 4. The acid is preferably at least one member selected from the group consisting of a carboxylic acid and a sulfonic acid. This polishing composition preferably further contains an anionic surfactant. The anionic surfactant is preferably a sulfuric acid ester or a sulfonate.

    摘要翻译： 提供适用于抛光二氧化硅膜的抛光组合物，特别是用于抛光形成在硅衬底或多晶硅膜上的二氧化硅膜，以及通过这种抛光组合物的抛光方法。 本发明的研磨用组合物含有大于1的结合度的胶体二氧化硅和酸，其pH为1〜4。酸优选为选自下述的至少一种： 羧酸和磺酸。 该抛光组合物优选还含有阴离子表面活性剂。 阴离子表面活性剂优选为硫酸酯或磺酸盐。

    Polishing Composition
    3.
    发明申请
    Polishing Composition 审中-公开
    抛光组合

    公开(公告)号：US20080265205A1

    公开(公告)日：2008-10-30

    申请号：US12065419

    申请日：2006-09-01

    申请人： Junhui Oh ,  Hiroshi Asano ,  Katsunobu Hori

    发明人： Junhui Oh ,  Hiroshi Asano ,  Katsunobu Hori

    IPC分类号： C09K13/00

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    摘要： A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR′COOH and a general formula ROR′OPO3H2 where R represents an alkyl group or an alkylphenyl group, R′ represents a polyoxyethylene group, polyoxypropylene group, or poly(oxyethylene/oxypropylene) group. The pH of the polishing composition is 8 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.

    摘要翻译： 抛光组合物含有保护膜形成剂，氧化剂和蚀刻剂。 保护膜形成剂包括选自苯并三唑和苯并三唑衍生物中的至少一种化合物和选自由通式ROR'COOH表示的化合物和通式ROR'OPO 3的至少一种化合物， 其中R表示烷基或烷基苯基，R'表示聚氧乙烯基，聚氧丙烯基或聚（氧乙烯/氧丙烯）基。 抛光组合物的pH为8以上。 抛光组合物适合用于形成半导体器件的布线的抛光。

    Polishing composition and polishing method
    4.
    发明申请
    Polishing composition and polishing method 有权
    抛光组合物和抛光方法

    公开(公告)号：US20050215060A1

    公开(公告)日：2005-09-29

    申请号：US11085612

    申请日：2005-03-21

    申请人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

    发明人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

    IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/00 ,  H01L21/304 ,  H01L21/321 ,  H01L21/4763 ,  C09K13/00

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

    摘要： A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.

    摘要翻译： 抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。 劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。 多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。 其中优素兰是优选的。 研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。 抛光组合物可以适用于用于形成半导体器件布线的抛光。

    Polishing composition and polishing method
    5.
    发明授权
    Polishing composition and polishing method 有权
    抛光组合物和抛光方法

    公开(公告)号：US07550388B2

    公开(公告)日：2009-06-23

    申请号：US11085612

    申请日：2005-03-21

    申请人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

    发明人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

    IPC分类号： H01L21/302

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

    摘要： A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.

    摘要翻译： 抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。 劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。 多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。 其中优素兰是优选的。 研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。 抛光组合物可以适用于用于形成半导体器件布线的抛光。

    Polishing method
    6.
    发明申请
    Polishing method 审中-公开
    抛光方法

    公开(公告)号：US20060134908A1

    公开(公告)日：2006-06-22

    申请号：US11266967

    申请日：2005-11-04

    申请人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Katsunobu Hori ,  Kenji Sakai

    发明人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Katsunobu Hori ,  Kenji Sakai

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212

    摘要： A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent. Thus, the wiring of the semiconductor device is reliably formed.

    摘要翻译： 用于研磨物体以形成用于半导体器件的布线的方法包括：通过化学和机械抛光去除导体层的外部的一部分以暴露阻挡层的上表面; 以及通过化学和机械抛光去除导体层的外部部分的剩余部分和阻挡层的外部部分，以露出绝缘体层的上表面。 当去除导体层的外部的一部分时，使用包含成膜剂的第一抛光组合物对物体的上表面进行化学和机械抛光。 随后，洗涤物体的上表面以通过第一抛光组合物中的成膜剂除去在导体层的上表面上形成的保护膜。 此后，使用含有成膜剂的第二抛光组合物再次对物体的上表面进行化学和机械抛光。 因此，可靠地形成半导体器件的布线。

    Polishing composition and polishing method
    7.
    发明申请
    Polishing composition and polishing method 审中-公开
    抛光组合物和抛光方法

    公开(公告)号：US20050208761A1

    公开(公告)日：2005-09-22

    申请号：US11085835

    申请日：2005-03-21

    申请人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

    发明人： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

    IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/00 ,  H01L21/304 ,  H01L21/321 ,  H01L21/4763

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/06

    摘要： A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.

    摘要翻译： 抛光组合物含有表面不规则抑制剂，二氧化硅，酸，氧化剂和水。 表面不规则抑制剂是选自例如储存的多糖和细胞外多糖中的至少一种。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 酸是选自例如硝酸，盐酸，硫酸，乳酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸中的至少一种。 氧化剂是例如过氧化氢，过硫酸盐，高碘酸盐，高氯酸盐，硝酸盐或氧化性金属盐。 抛光组合物可以适用于在半导体器件中形成布线的抛光。

    Polishing composition and polishing method
    9.
    发明申请
    Polishing composition and polishing method 审中-公开
    抛光组合物和抛光方法

    公开(公告)号：US20070176140A1

    公开(公告)日：2007-08-02

    申请号：US10574115

    申请日：2004-09-30

    申请人： Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Junhui Oh ,  Atsunori Kawamura ,  Kenji Sakai

    发明人： Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Junhui Oh ,  Atsunori Kawamura ,  Kenji Sakai

    IPC分类号： B24D3/02 ,  C09K13/00 ,  C03C15/00 ,  B44C1/22 ,  H01L21/461

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

    摘要： A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is used in chemical mechanical polishing for removing the remaining part of the portion of a conductive layer positioned outside the trench and the portion of a barrier layer positioned outside the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidizing agent, and water. The second polishing composition contains colloidal silica, an acid, an anticorrosive, and a completely saponified polyvinyl alcohol.

    摘要翻译： 第一抛光组合物用于化学机械抛光，用于去除位于沟槽外部的导电层的一部分的一部分。 第二抛光组合物用于化学机械抛光，用于去除位于沟槽外部的导电层的部分的剩余部分以及位于沟槽外部的阻挡层的部分。 第一抛光组合物含有特定的表面活性剂，氧化硅，羧酸，防腐蚀剂，氧化剂和水。 第二抛光组合物含有胶体二氧化硅，酸，防腐蚀剂和完全皂化的聚乙烯醇。