Vapor-barrier vacuum isolation system
    2.
    发明授权
    Vapor-barrier vacuum isolation system 有权
    蒸气隔离真空隔离系统

    公开(公告)号:US08658004B2

    公开(公告)日:2014-02-25

    申请号:US12470689

    申请日:2009-05-22

    IPC分类号: C23C14/00

    摘要: A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump.

    摘要翻译: 系统包括在真空室内的准直光束源,可冷凝阻挡气体,冷却材料,泵以及由冷却材料冷却以隔离阻挡气体的隔离室。 每个隔离室的压力水平基本上大于真空室中的压力水平。 同轴对齐的孔连接工作室,隔离室和真空室。 泵排出未凝结的阻挡气体。 阻挡气体阻止大气蒸气从工作室进入隔离室,并且在进入每个隔离室时经历超音速流动膨胀。 一种方法包括将隔离室连接到真空室,将蒸汽引导到与工作室的边界,以及当蒸气通过孔口进入隔离室时使其蒸气膨胀。 蒸汽在每个隔离室中使用冷却材料冷凝,未冷凝的蒸汽通过泵从隔离室泵出。

    Use of Beam Deflection to Control an Electron Beam Wire Deposition Process
    3.
    发明申请
    Use of Beam Deflection to Control an Electron Beam Wire Deposition Process 有权
    使用光束偏转来控制电子束线沉积过程

    公开(公告)号:US20100270274A1

    公开(公告)日:2010-10-28

    申请号:US12751075

    申请日:2010-03-31

    IPC分类号: B23K15/00

    CPC分类号: B23K15/02

    摘要: A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

    摘要翻译: 一种用于控制电子束工艺的方法,其中将熔丝熔化并沉积在作为熔池的衬底上的方法包括以复杂光栅图案生成电子束,并将光束引导到电线的外表面上,由此控制位置 电线相对于熔池。 引导梁选择性地加热线的外表面并且保持线相对于熔池的位置。 一种用于控制电子束处理的装置包括适于产生电子束的束枪,以及用于向电子束提供复杂光栅图案并用于将电子束引导到线的外表面以控制位置的控制器 的电线相对于熔池。

    Closed-loop process control for electron beam freeform fabrication and deposition processes
    4.
    发明授权
    Closed-loop process control for electron beam freeform fabrication and deposition processes 有权
    电子束自由形成和沉积过程的闭环过程控制

    公开(公告)号:US08452073B2

    公开(公告)日:2013-05-28

    申请号:US12750991

    申请日:2010-03-31

    IPC分类号: G06K9/00

    摘要: A closed-loop control method for an electron beam freeform fabrication (EBF3) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF3 process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF3 apparatus to control the EBF3 process in a closed-loop manner.

    摘要翻译: 用于电子束自由形成(EBF3)处理的闭环控制方法包括在使用传感器的过程中检测感兴趣的特征,连续评估感兴趣的特征,实时地确定其中发生的变化, 并自动修改控制参数来控制EBF3进程。 一种装置提供了该方法的闭环控制方法,并且包括用于产生电子束的电子枪,用于将线材馈送到衬底的送丝器,其中线材熔化并逐渐沉积到衬底上,传感器 (s)和主机。 传感器在过程中测量感兴趣的特征,并且主机连续评估感兴趣的特征,以实时确定其中发生的变化。 主机自动将控制参数修改为EBF3设备,以闭环方式控制EBF3进程。

    Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes
    5.
    发明申请
    Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes 有权
    电子束自由形成和沉积过程的闭环过程控制

    公开(公告)号:US20100260410A1

    公开(公告)日:2010-10-14

    申请号:US12750991

    申请日:2010-03-31

    IPC分类号: G06K9/00 G06F17/00

    摘要: A closed-loop control method for an electron beam freeform fabrication (EBF3) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF3 process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF3 apparatus to control the EBF3 process in a closed-loop manner.

    摘要翻译: 用于电子束自由形成(EBF3)处理的闭环控制方法包括在使用传感器的过程中检测感兴趣的特征,连续评估感兴趣的特征,实时地确定其中发生的变化, 并自动修改控制参数来控制EBF3进程。 一种装置提供了该方法的闭环控制方法,并且包括用于产生电子束的电子枪,用于将线材馈送到衬底的送丝器,其中线材熔化并逐渐沉积到衬底上,传感器 (s)和主机。 传感器在过程中测量感兴趣的特征,并且主机连续评估感兴趣的特征,以实时确定其中发生的变化。 主机自动将控制参数修改为EBF3设备,以闭环方式控制EBF3进程。

    Vapor-Barrier Vacuum Isolation System
    6.
    发明申请
    Vapor-Barrier Vacuum Isolation System 有权
    气体隔离真空隔离系统

    公开(公告)号:US20100122901A1

    公开(公告)日:2010-05-20

    申请号:US12470689

    申请日:2009-05-22

    IPC分类号: C23C14/34

    摘要: A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump.

    摘要翻译: 系统包括在真空室内的准直光束源,可冷凝阻挡气体,冷却材料,泵以及由冷却材料冷却以隔离阻挡气体的隔离室。 每个隔离室的压力水平基本上大于真空室中的压力水平。 同轴对齐的孔连接工作室,隔离室和真空室。 泵排出未凝结的阻挡气体。 阻挡气体阻止大气蒸气从工作室进入隔离室,并且在进入每个隔离室时经历超音速流动膨胀。 一种方法包括将隔离室连接到真空室,将蒸汽引导到与工作室的边界,以及当蒸气通过孔口进入隔离室时使其蒸气膨胀。 蒸汽在每个隔离室中使用冷却材料冷凝,未冷凝的蒸汽通过泵从隔离室泵出。

    Use of beam deflection to control an electron beam wire deposition process
    8.
    发明授权
    Use of beam deflection to control an electron beam wire deposition process 有权
    使用光束偏转来控制电子束丝沉积过程

    公开(公告)号:US08344281B2

    公开(公告)日:2013-01-01

    申请号:US12751075

    申请日:2010-03-31

    IPC分类号: B23K15/00

    CPC分类号: B23K15/02

    摘要: A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

    摘要翻译: 一种用于控制电子束工艺的方法,其中将熔丝熔化并沉积在作为熔池的衬底上的方法包括以复杂光栅图案生成电子束,并将光束引导到电线的外表面上,由此控制位置 电线相对于熔池。 引导梁选择性地加热线的外表面并且保持线相对于熔池的位置。 一种用于控制电子束处理的装置包括适于产生电子束的束枪,以及用于向电子束提供复杂光栅图案并用于将电子束引导到线的外表面以控制位置的控制器 的电线相对于熔池。

    Solid freeform fabrication apparatus and methods
    9.
    发明授权
    Solid freeform fabrication apparatus and methods 有权
    固体自由形成装置和方法

    公开(公告)号:US07168935B1

    公开(公告)日:2007-01-30

    申请号:US10637086

    申请日:2003-08-01

    IPC分类号: B28B17/00 B29C35/04 B23K15/00

    摘要: An apparatus for formation of a three dimensional object comprising a sealed container; an electron beam subsystem capable of directing energy within said container; a positioning subsystem contained within said container; a wire feed subsystem contained within said container; an instrumentation subsystem electronically connected to said electron beam subsystem, positioning subsystem, and wire feed subsystem; and a power distribution subsystem electrically connected to said electron beam subsystem, positioning subsystem, wire feed subsystem, and said instrumentation subsystem.

    摘要翻译: 一种用于形成包括密封容器的三维物体的装置; 能够在所述容器内引导能量的电子束子系统; 包含在所述容器内的定位子系统; 包含在所述容器内的送丝子系统; 电子连接到所述电子束子系统,定位子系统和送丝子系统的仪表子系统; 以及与所述电子束子系统,定位子系统,送丝子系统和所述仪表子系统电连接的配电子系统。