公开(公告)号：US07045785B2

公开(公告)日：2006-05-16

申请号：US10960987

申请日：2004-10-12

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J5/20

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

摘要： A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, fanning a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrate and suspending the infrared detection pixel within the hole by the supporting beam line.

摘要翻译： 一种制造红外线传感器的方法，包括制备包括由单晶硅制成的支撑构件的基板，形成在支撑构件上的由氧化硅制成的第一层和形成在第一层上的单晶硅制成的第二层， 在所述第二层上嵌入氧化硅层，在所述第二层中形成红外检测像素，所述红外检测像素具有将热量转换为电信号的功能，在所述硅上扇出包括U形导电体的支撑束线 氧化层，同时在第二层上形成外围电路的MOS晶体管的栅电极，栅电极具有U形横截面的导电体，在第二层上形成红外吸收层，红外线吸收层具有 将红外线转换为热的功能，以及蚀刻第二层以形成用于隔离红外线检测pi的孔 从衬底起xel并通过支撑束线将红外检测像素悬挂在孔内。

公开(公告)号：US07026617B2

公开(公告)日：2006-04-11

申请号：US10647345

申请日：2003-08-26

申请人： Naoya Mashio ,  Keitaro Shigenaka ,  Hideyuki Funaki ,  Yoshinori Iida ,  Ikuo Fujiwara

发明人： Naoya Mashio ,  Keitaro Shigenaka ,  Hideyuki Funaki ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC分类号： G01J5/00

CPC分类号： G01J5/08 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/0245 ,  G01J5/0853 ,  G01J5/14 ,  G01J5/22 ,  G01J2005/123 ,  H04N5/33

摘要： An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

摘要翻译： 红外图像传感器包括（a）基体，（b）设置在基体上的多条信号线，（c）与信号线交叉的多个地址线，（d）多个检测器部分， 信号线的交叉区域和地址线，每个检测器部分连接在对应的信号线和地址线之间，每个检测器部分被配置为检测红外线，（e）多个支撑梁 每个检测器部分在基体上方，以及（f）多个接触器，其构造成使得每个检测器部分与基体热接触，以便将热能积聚在每个检测器部分中朝向基体 。

公开(公告)号：US20050029454A1

公开(公告)日：2005-02-10

申请号：US10957623

申请日：2004-10-05

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/33 ,  H04N5/335 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  G01J5/20

CPC分类号： H01L27/14649 ,  H04N5/33

摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

摘要翻译： 固体红外成像器包括红外感测像素的矩阵阵列，其形成为半导体衬底上的成像区域，并且每个都包含用于感测入射的红外辐射的pn结热电转换器元件，每个连接到 相应行的像素，各自连接到相应列的像素的信号线，选择并驱动行选择行中的一个的行选择电路，以及读出从信号线输出到信号线的信号电流的信号读出电路 对应于由行选择电路驱动的行选择线的像素。 特别地，信号读出电路包括使信号线的电位稳定到恒定电平的信号线势势稳定器，以及将在信号线中流动的信号电流转换为信号电压的电流 - 电压转换器。

公开(公告)号：US06809320B2

公开(公告)日：2004-10-26

申请号：US10244403

申请日：2002-09-17

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： H01L2714

CPC分类号： H01L27/14649 ,  H04N5/33

摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

摘要翻译： 固体红外成像器包括红外感测像素的矩阵阵列，其形成为半导体衬底上的成像区域，并且每个都包含用于感测入射的红外辐射的pn结热电转换器元件，每个连接到 相应行的像素，各自连接到相应列的像素的信号线，选择并驱动行选择行中的一个的行选择电路，以及读出从信号线输出到信号线的信号电流的信号读出电路 对应于由行选择电路驱动的行选择线的像素。 特别地，信号读出电路包括使信号线的电位稳定到恒定电平的信号线势势稳定器，以及将在信号线中流动的信号电流转换为信号电压的电流 - 电压转换器。

公开(公告)号：US06573504B2

公开(公告)日：2003-06-03

申请号：US09819596

申请日：2001-03-29

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J520

CPC分类号： H01L31/103 ,  G01J5/10 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683 ,  H01L31/024 ,  H01L31/035281 ,  Y02E10/50

摘要： An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.

摘要翻译： 本发明的目的是提供一种高灵敏度红外传感器。 根据本发明，与传统结构相比，用于支撑腔结构中的传感器部分的支撑构件形成为非常薄，支撑构件的截面积显着减小，导热性可以显着降低， 结果，可以获得具有非常高的灵敏度的红外线传感器。 此外，根据本发明，由于蚀刻了支撑构件区域的绝缘层，并且在该区域中埋设牺牲硅膜，所以用于形成支撑腿的绝缘层RIE的纵横比显着降低。 便于制造过程，作为副作用，支撑腿的截面积进一步减小，并且可以进一步提高红外线传感器的灵敏度。

公开(公告)号：US07087900B2

公开(公告)日：2006-08-08

申请号：US10957623

申请日：2004-10-05

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J5/20 ,  H01L27/14

CPC分类号： H01L27/14649 ,  H04N5/33

摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

公开(公告)号：US06974953B2

公开(公告)日：2005-12-13

申请号：US10960988

申请日：2004-10-12

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J1/02 ,  G01J5/20 ,  G01J5/24 ,  H01L21/28 ,  H01L27/14 ,  H01L27/146 ,  H01L27/16 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/09 ,  H01L37/02

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

公开(公告)号：US20050061980A1

公开(公告)日：2005-03-24

申请号：US10960988

申请日：2004-10-12

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J1/02 ,  G01J5/20 ,  G01J5/24 ,  H01L21/28 ,  H01L27/14 ,  H01L27/146 ,  H01L27/16 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/09 ,  H01L37/02

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

摘要翻译： 一种用于支撑在半导体衬底上的腔中的支撑束线，包括用于吸收入射红外线并将其转换成热的红外吸收部分的红外检测像素和用于转换由热量引起的温度变化的热电转换部分 在红外线吸收部分中产生的电信号由与外围电路中使用的镶嵌金属栅极MOS晶体管的栅极相同的一层上的镶嵌金属形成。 支撑梁线包括具有U形横截面的导体线，其中填充有金属。

公开(公告)号：US06806470B2

公开(公告)日：2004-10-19

申请号：US10108391

申请日：2002-03-29

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J520

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

摘要翻译： 一种用于支撑在半导体衬底上的腔中的支撑束线，包括用于吸收入射红外线并将其转换成热的红外吸收部分的红外检测像素和用于转换由热量引起的温度变化的热电转换部分 在红外线吸收部分中产生的电信号由与外围电路中使用的镶嵌金属栅极MOS晶体管的栅极相同的一层上的镶嵌金属形成。 支撑梁线包括具有U形横截面的导体线，其中填充有金属。

公开(公告)号：US06599771B2

公开(公告)日：2003-07-29

申请号：US09819898

申请日：2001-03-29

申请人： Naoya Mashio ,  Yoshinori Iida ,  Keitaro Shigenaka

发明人： Naoya Mashio ,  Yoshinori Iida ,  Keitaro Shigenaka

IPC分类号： H01L2100

CPC分类号： G01J5/20 ,  H01L27/14649 ,  H01L27/14687

摘要： A thermal type infrared sensor and a method of manufacturing the same that have a high degree of freedom of structure and a low cost. An infrared ray detecting portion and a support leg are formed above flat plate-shape void formed inside of a semiconductor substrate, and a processing circuit section of a signal from a detecting portion is fabricated on the semiconductor substrate. Because the structure of the processing circuit section is not influenced by a substrate structure, characteristics are improved. Furthermore, the structure is simplified, and it is possible to reduce a manufacturing cost.

摘要翻译： 一种热式红外传感器及其制造方法，其结构自由度高，成本低。 在半导体衬底内形成的平板状空隙之上形成有红外线检测部和支撑腿，在半导体衬底上制作来自检测部的信号的处理电路部。 由于处理电路部分的结构不受衬底结构的影响，所以特性得到改善。 此外，结构简化，并且可以降低制造成本。