公开(公告)号：US5987044A

公开(公告)日：1999-11-16

申请号：US780934

申请日：1996-10-11

申请人： Tetsufumi Odagawa ,  Kiyohide Wakao

发明人： Tetsufumi Odagawa ,  Kiyohide Wakao

IPC分类号： H01S5/042 ,  H01S5/062 ,  H01S5/068 ,  H01S5/40 ,  H01S3/00

CPC分类号： H01S5/4025 ,  H01S5/06209 ,  H01S5/06213 ,  H01S5/06216 ,  H01S5/068 ,  H01S5/06812

摘要： A semiconductor light source system includes a laser diode that is operated in a variable temperature environment and a driver circuit, wherein the driver circuit sets a magnitude of a signal current supplied to the laser diode below an upper limit level that corresponds to a maximum operational temperature of the laser diode. The driver circuit simultaneously sets a relative magnitude of the signal current with respect to a bias current such that a sufficient extinction ratio is achieved in an output optical beam and further sets a relative magnitude of the signal current with respect to the bias current such that a sufficiently small oscillation delay is achieved in the laser diode.

摘要翻译： 半导体光源系统包括在可变温度环境中操作的激光二极管和驱动电路，其中驱动电路将提供给激光二极管的信号电流的大小设置在对应于最大工作温度的上限电平以下 的激光二极管。 驱动器电路同时设置相对于偏置电流的信号电流的相对幅度，使得在输出光束中实现足够的消光比，并进一步相对于偏置电流设置信号电流的相对幅度，使得 在激光二极管中实现了足够小的振荡延迟。

公开(公告)号：US5657144A

公开(公告)日：1997-08-12

申请号：US485116

申请日：1995-06-07

申请人： Kazuhiro Tanaka ,  Kiyohide Wakao ,  Hiroyuki Nobuhara ,  Nobuhiro Fujimoto ,  Hiroyuki Rokugawa ,  Satoshi Kuroyanagi

发明人： Kazuhiro Tanaka ,  Kiyohide Wakao ,  Hiroyuki Nobuhara ,  Nobuhiro Fujimoto ,  Hiroyuki Rokugawa ,  Satoshi Kuroyanagi

IPC分类号： H04B10/155 ,  H04Q11/00 ,  H04J14/02

CPC分类号： H04Q11/0005 ,  H04B10/506 ,  H04B10/572 ,  H04Q2011/0009 ,  H04Q2011/0011 ,  H04Q2011/0013 ,  H04Q2011/0018 ,  H04Q2011/0039 ,  H04Q2011/0041 ,  H04Q2011/0052 ,  H04Q2011/0058

摘要： An optical processing device for converting a wavelength of an optical signal comprises an optical processing unit supplied with an input optical beam carrying thereon one or more optical signals with respective wavelengths that are different from each other, the optical processing means being further supplied with a control optical beam having a stabilized reference wavelength and selecting the optical signal that has a first wavelength and outputting the same with a second wavelength that is specified by the reference wavelength; and a control Unit for controlling the optical processing unit by specifying the first wavelength of the optical beam to be selected.

摘要翻译： 用于转换光信号的波长的光处理装置包括：光学处理单元，其被提供有输入光束，其上承载有一个或多个具有彼此不同的波长的光信号，光处理装置还被提供控制 光束具有稳定的参考波长并选择具有第一波长的光信号并以由参考波长指定的第二波长输出; 以及控制单元，用于通过指定要选择的光束的第一波长来控制光学处理单元。

公开(公告)号：US5715075A

公开(公告)日：1998-02-03

申请号：US293598

申请日：1994-08-22

申请人： Kazuhiro Tanaka ,  Kiyohide Wakao ,  Hiroyuki Nobuhara ,  Nobuhiro Fujimoto ,  Hiroyuki Rokugawa ,  Satoshi Kuroyanagi

发明人： Kazuhiro Tanaka ,  Kiyohide Wakao ,  Hiroyuki Nobuhara ,  Nobuhiro Fujimoto ,  Hiroyuki Rokugawa ,  Satoshi Kuroyanagi

IPC分类号： H04B10/50 ,  H04B10/572 ,  H04J14/02 ,  H04Q3/52 ,  H04Q11/00 ,  H04Q11/02

CPC分类号： H04Q11/0005 ,  H04B10/506 ,  H04B10/572 ,  H04Q2011/0009 ,  H04Q2011/0011 ,  H04Q2011/0013 ,  H04Q2011/0018 ,  H04Q2011/0039 ,  H04Q2011/0041 ,  H04Q2011/0052 ,  H04Q2011/0058

摘要： An optical processing device for converting a wavelength of an optical signal comprises an optical processing unit supplied with an input optical beam carrying thereon one or more optical signals with respective wavelengths that are different from each other, the optical processing means being further supplied with a control optical beam having a stabilized reference wavelength and selecting the optical signal that has a first wavelength and outputting the same with a second wavelength that is specified by the reference wavelength; and a control unit for controlling the optical processing unit by specifying the first wavelength of the optical beam to be selected.

摘要翻译： 用于转换光信号的波长的光处理装置包括：光学处理单元，其被提供有输入光束，其上承载有一个或多个具有彼此不同的波长的光信号，光处理装置还被提供控制 光束具有稳定的参考波长并选择具有第一波长的光信号并以由参考波长指定的第二波长输出; 以及控制单元，用于通过指定要选择的光束的第一波长来控制光学处理单元。

公开(公告)号：US5179615A

公开(公告)日：1993-01-12

申请号：US854707

申请日：1992-03-20

申请人： Kazuhiro Tanaka ,  Kiyohide Wakao

发明人： Kazuhiro Tanaka ,  Kiyohide Wakao

IPC分类号： G02B6/122 ,  G02B6/12 ,  G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  G02F1/21 ,  G02F1/313 ,  H01S3/1055 ,  H01S5/00 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/34 ,  H01S5/343

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01S3/1055 ,  H01S5/06256 ,  H01S5/3434 ,  G02F1/3132 ,  G02F1/3137 ,  G02F2001/0152 ,  G02F2001/212 ,  G02F2202/102 ,  H01S5/3428 ,  H01S5/34306

摘要： A semiconductor optical waveguide comprises a substrate of a semiconductor material doped to a first conductivity type, a multiple quantum well layer provided on the substrate for guiding an optical beam, a clad layer doped to a second conductivity type and provided on the multiple quantum well layer for confining the optical beam, a first electrode provided on the upper major surface of the clad layer for injecting carriers of a first type into the quantum well layer, and a second electrode provided on the lower major surface of the substrate for injecting carriers of a second type into the quantum well layer, wherein multiple quantum well layer comprises an alternate stacking of: a quantum well layer having a composition set to provide a smallest band gap that is possible under a constraint that the quantum well layer maintains a lattice constant with the substrate and a thickness set with respect to the optical energy of the optical beam such that a discrete quantum level of carriers is formed in the quantum well layer at an energy level larger than the optical energy by about 50 meV; and a barrier layer having a band gap substantially larger than the band gap of the quantum well layer.

公开(公告)号：US4726031A

公开(公告)日：1988-02-16

申请号：US784594

申请日：1985-10-04

申请人： Kiyohide Wakao ,  Haruhisa Soda

发明人： Kiyohide Wakao ,  Haruhisa Soda

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/10 ,  H01S5/12 ,  H01S3/19

CPC分类号： H01S5/10 ,  H01S5/12 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1243

摘要： A semiconductor laser including a stripe-shaped active layer, a clad region, and a diffraction grating. The stripe-shaped active layer has a thickness in a first direction, has a first energy gap, and extends in a second direction orthogonal to the first direction. The clad region surrounds the stripe-shaped active layer, and has a second energy band gap greater than the first energy band gap. The diffraction grating is provided in parallel with and adjacent to, the stripe-shaped active layer. The stripe-shaped active layer has a first portion with a first light propagation constant and with a first dimension in a third direction orthogonal to the first and second directions, and has a second portion with a second light propagation constant and with a second dimension in the third direction. The first dimension and the second dimension are different from each other. The second portion has a length L in the second direction. The stripe-shaped active layer satisfies the condition that a product of .DELTA..beta. and L is an odd multiple of .pi./2, where .DELTA..beta. is a difference between the first and second light propagation constants.

摘要翻译： 一种包括条形有源层，包层区和衍射光栅的半导体激光器。 条形有源层具有第一方向的厚度，具有第一能隙，并且沿与第一方向正交的第二方向延伸。 包层区域围绕条状有源层，并且具有大于第一能带隙的第二能带隙。 衍射光栅与条形有源层平行并相邻地设置。 条形有源层具有第一部分，具有第一光传播常数，第一尺寸在与第一和第二方向正交的第三方向上，并且具有第二部分，具有第二光传播常数，第二部分具有第二尺寸 第三个方向。 第一维度和第二维度彼此不同。 第二部分在第二方向上具有长度L. 条形有源层满足以下条件：DELTAβ和L的乘积是pi / 2的奇数倍，其中ΔTAβ是第一和第二光传播常数之间的差。