Semiconductor device including fuse focus detector, fabricating method thereof and laser repair method using the fuse focus detector
    1.
    发明授权
    Semiconductor device including fuse focus detector, fabricating method thereof and laser repair method using the fuse focus detector 有权
    包括保险丝聚焦检测器,其制造方法和使用熔丝焦点检测器的激光修复方法的半导体器件

    公开(公告)号:US07671361B2

    公开(公告)日:2010-03-02

    申请号:US11434144

    申请日:2006-05-16

    IPC分类号: H01L23/58

    摘要: Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.

    摘要翻译: 提供一种半导体器件,包括熔丝焦点检测器,其制造方法和激光修复方法。 在芯片区域中,可以在第一级形成保险丝。 包括第一和第二导电层的熔丝聚焦检测器可以形成在划线区域中。 第一导电层可以形成在第一层,而第二导电层可以形成在不同的水平。 对于激光修复方法,可以将目标区域划分为子区域。 在一个选择的子区域中,可以在提供关于熔丝聚焦检测器的厚度的信息的反射光测量的方向上激光扫描熔丝聚焦检测器。 使用厚度信息,可以计算所选子区域中的熔丝的聚焦偏移值。 当焦点偏移值在允许范围内时,可以执行熔断器切割。

    Real-time optimized testing of semiconductor device
    2.
    发明申请
    Real-time optimized testing of semiconductor device 有权
    半导体器件的实时优化测试

    公开(公告)号:US20080022167A1

    公开(公告)日:2008-01-24

    申请号:US11730792

    申请日:2007-04-04

    IPC分类号: G11C29/00

    摘要: A method and system for testing a semiconductor device is disclosed. The method provides an integrated test program defined by a plurality of test items, and a test program defined by a sub-set of the test items. Test data is derived by batch sample testing of the semiconductor device, and an error rate for a test item is computed and then compared to a reference data value. On the basis of the comparison between the error rate and the reference data value, the test program may be modified in real-time.

    摘要翻译: 公开了一种用于测试半导体器件的方法和系统。 该方法提供由多个测试项目定义的集成测试程序和由测试项目的子集定义的测试程序。 通过对半导体器件的批量样品测试得出测试数据,并且计算测试项目的错误率,然后与参考数据值进行比较。 基于错误率与参考数据值之间的比较,可以实时修改测试程序。

    Semiconductor device including fuse focus detector, fabrication method thereof and laser repair method using the fuse detector
    3.
    发明申请
    Semiconductor device including fuse focus detector, fabrication method thereof and laser repair method using the fuse detector 有权
    包括保险丝焦点检测器,其制造方法和使用熔丝检测器的激光修复方法的半导体器件

    公开(公告)号:US20070126084A1

    公开(公告)日:2007-06-07

    申请号:US11434144

    申请日:2006-05-16

    IPC分类号: H01L23/544 H01L21/30

    摘要: Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.

    摘要翻译: 提供一种半导体器件,其包括熔丝焦点检测器,其制造方法和激光修复方法。 在芯片区域中,可以在第一级形成保险丝。 包括第一和第二导电层的熔丝聚焦检测器可以形成在划线区域中。 第一导电层可以形成在第一层,而第二导电层可以形成在不同的水平。 对于激光修复方法,可以将目标区域划分为子区域。 在一个选择的子区域中,可以在提供关于熔丝聚焦检测器的厚度的信息的反射光测量的方向上激光扫描熔丝聚焦检测器。 使用厚度信息,可以计算所选子区域中的熔丝的聚焦偏移值。 当焦点偏移值在允许范围内时,可以执行熔断器切割。

    Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cell
    7.
    发明授权
    Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cell 失效
    包括制造链路和具有相同功能的冗余地址解码器的保险丝盒以及用于修复有缺陷的存储器单元的方法

    公开(公告)号:US06850450B2

    公开(公告)日:2005-02-01

    申请号:US10075568

    申请日:2002-02-13

    IPC分类号: G11C29/00 G11C11/00

    CPC分类号: G11C29/785 G11C29/781

    摘要: A fuse box including make-links and a redundancy address decoder including the fuse box are provided. It is preferable that the fuse box includes a plurality of make-links for programming an address of a defective normal memory cell with an address of a corresponding redundant memory cell, and the address is a row address or a column address. The redundant address decoder includes a fuse box having a plurality of make-links for decoding an address of a defect cell and a redundant word line selection circuit for selecting a word line of a redundant cell corresponding to the address of the defect cell in response to a signal output from the fuse box.

    摘要翻译: 提供包括制造链路的保险丝盒和包括保险丝盒的冗余地址解码器。 优选地,保险丝盒包括多个制造链接,用于通过对应的冗余存储器单元的地址对有缺陷的正常存储器单元的地址进行编程,并且该地址是行地址或列地址。 冗余地址解码器包括具有用于对缺陷单元的地址进行解码的多个制造链路的熔丝盒和冗余字线选择电路,用于响应于对应于缺陷单元的地址的冗余单元的字线进行选择 从保险丝盒输出的信号。

    Real-time optimized testing of semiconductor device
    8.
    发明授权
    Real-time optimized testing of semiconductor device 有权
    半导体器件的实时优化测试

    公开(公告)号:US07689876B2

    公开(公告)日:2010-03-30

    申请号:US11730792

    申请日:2007-04-04

    摘要: A method and system for testing a semiconductor device is disclosed. The method provides an integrated test program defined by a plurality of test items, and a test program defined by a sub-set of the test items. Test data is derived by batch sample testing of the semiconductor device, and an error rate for a test item is computed and then compared to a reference data value. On the basis of the comparison between the error rate and the reference data value, the test program may be modified in real-time.

    摘要翻译: 公开了一种用于测试半导体器件的方法和系统。 该方法提供由多个测试项目定义的集成测试程序和由测试项目的子集定义的测试程序。 通过对半导体器件的批量样品测试得出测试数据,并且计算测试项目的错误率,然后与参考数据值进行比较。 基于错误率与参考数据值之间的比较,可以实时修改测试程序。

    Test system of semiconductor device having a handler remote control and method of operating the same
    10.
    发明申请
    Test system of semiconductor device having a handler remote control and method of operating the same 有权
    具有处理器遥控器的半导体器件的测试系统及其操作方法

    公开(公告)号:US20060158211A1

    公开(公告)日:2006-07-20

    申请号:US11252448

    申请日:2005-10-17

    IPC分类号: G01R31/26

    CPC分类号: G01R31/31926 G01R31/31907

    摘要: A test system of a semiconductor device for a handler remote control is provided. The system includes: a tester for testing the semiconductor device; a handler connected to the tester through a GPIB (General Purpose Instruction Bus) communication cable; a tester server connected to the tester to download a test program, handler remote control program and a handler state check program to the tester; and communication data transmitted and received through the GPIB communication cable between the tester and the handler, wherein the communication data has basic communication data for an electrical test of the semiconductor device, communication data for the handler remote control, and communication data for a handler state check.

    摘要翻译: 提供了一种用于处理器遥控器的半导体器件的测试系统。 该系统包括:用于测试半导体器件的测试仪; 通过GPIB(通用指令总线)通信电缆连接到测试仪的处理器; 连接到测试器的测试仪服务器向测试者下载测试程序,处理程序遥控程序和处理程序状态检查程序; 以及通过GPIB通信电缆在测试者和处理者之间发送和接收的通信数据,其中通信数据具有用于半导体器件的电气测试的基本通信数据,用于处理器远程控制的通信数据和用于处理器状态的通信数据 检查。