公开(公告)号：US20130134494A1

公开(公告)日：2013-05-30

申请号：US13588393

申请日：2012-08-17

Applicant: Jong-Won HONG ,  Hei-Seung KIM ,  Kyoung-hee NAM ,  In-sun PARK ,  Jong-Myeong LEE

Inventor： Jong-Won HONG ,  Hei-Seung KIM ,  Kyoung-hee NAM ,  In-sun PARK ,  Jong-Myeong LEE

IPC: H01L29/788 ,  H01L23/532 ,  H01L21/76

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11529 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.

Abstract translation: 半导体器件包括填充通过衬底上的绝缘中间层的至少一部分形成并包括铜的沟槽的金属图案，以及金属图案中的包含钽，氮化钽，钛，钛中的至少一种的润湿改善层图案 氮化物，钌，钴和锰。

公开(公告)号：US09355851B2

公开(公告)日：2016-05-31

申请号：US13588393

申请日：2012-08-17

Applicant: Jong-Won Hong ,  Hei-Seung Kim ,  Kyoung-hee Nam ,  In-sun Park ,  Jong-Myeong Lee

Inventor： Jong-Won Hong ,  Hei-Seung Kim ,  Kyoung-hee Nam ,  In-sun Park ,  Jong-Myeong Lee

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/288 ,  H01L23/532 ,  H01L27/115 ,  H01L21/768 ,  H01L27/108

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11529 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.

Abstract translation: 半导体器件包括填充通过衬底上的绝缘中间层的至少一部分形成并包括铜的沟槽的金属图案，以及金属图案中的包含钽，氮化钽，钛，钛中的至少一种的润湿改善层图案 氮化物，钌，钴和锰。