公开(公告)号：US20160093617A1

公开(公告)日：2016-03-31

申请号：US14635253

申请日：2015-03-02

申请人： Jung-Min PARK ,  Suk-Hoon KIM ,  Min-Woo SONG ,  Seok-Jun WON ,  In-Hee LEE ,  Kyung-Il HONG ,  Sang-Jin HYUN

发明人： Jung-Min PARK ,  Suk-Hoon KIM ,  Min-Woo SONG ,  Seok-Jun WON ,  In-Hee LEE ,  Kyung-Il HONG ,  Sang-Jin HYUN

IPC分类号： H01L27/092 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L29/42328 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/785

摘要： A semiconductor device, including a substrate; an interlayer insulating layer having a trench on the substrate, the trench having a bottom and sidewalls; a dielectric layer on the bottom and sidewalls of the trench; a work function control layer on the dielectric layer; a wetting layer on the work function control layer; a gap fill layer on the wetting layer; and a reactive layer between the wetting layer and the gap fill layer, the reactive layer being thicker than the gap fill layer.

摘要翻译： 一种半导体器件，包括衬底; 在所述衬底上具有沟槽的层间绝缘层，所述沟槽具有底部和侧壁; 在沟槽的底部和侧壁上的电介质层; 电介质层上的功函数控制层; 工作功能控制层上的润湿层; 润湿层上的间隙填充层; 以及在润湿层和间隙填充层之间的反应层，反应层比间隙填充层厚。

公开(公告)号：US08815673B2

公开(公告)日：2014-08-26

申请号：US13480947

申请日：2012-05-25

申请人： Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

发明人： Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

IPC分类号： H01L21/8238 ,  H01L21/28 ,  H01L29/51

CPC分类号： H01L21/823857 ,  H01L21/28202 ,  H01L29/518

摘要： In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.

摘要翻译： 在本发明的一些实施方案中，方法包括在半导体衬底上形成氧化物层，将氮注入到氧化物层中以形成氮注入层并将氧化物层改变为氧氮化物层，除去氧氮化物层的一部分 将氮氧化物层的一部分留在第一区域中，并在第二区域中露出氮气注入层，并形成绝缘层，该绝缘层包括第一区域中的氧氮化物层的一部分和氮注入层上的一部分 第二个区域。 绝缘层可以具有比氧化物层更高的介电常数。

公开(公告)号：US20110308460A1

公开(公告)日：2011-12-22

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/455 ,  C23C16/509 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US20120309144A1

公开(公告)日：2012-12-06

申请号：US13480947

申请日：2012-05-25

申请人： Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

发明人： Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

IPC分类号： H01L21/8238 ,  H01L21/3205

CPC分类号： H01L21/823857 ,  H01L21/28202 ,  H01L29/518

摘要： In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.

摘要翻译： 在本发明的一些实施方案中，方法包括在半导体衬底上形成氧化物层，将氮注入到氧化物层中以形成氮注入层并将氧化物层改变为氧氮化物层，去除一部分氮氧化物层 将氮氧化物层的一部分留在第一区域中，并在第二区域中露出氮气注入层，并形成绝缘层，该绝缘层包括第一区域中的氧氮化物层的一部分和氮注入层上的部分 第二个区域。 绝缘层可以具有比氧化物层更高的介电常数。

公开(公告)号：US20080069955A1

公开(公告)日：2008-03-20

申请号：US11857294

申请日：2007-09-18

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US08215264B2

公开(公告)日：2012-07-10

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US07976898B2

公开(公告)日：2011-07-12

申请号：US11857294

申请日：2007-09-18

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。