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公开(公告)号：US20210245098A1
公开(公告)日：2021-08-12
申请号：US16973767
申请日：2019-04-17
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho BAE , Yu Jin LEE , Hyung Jun KIM , Jeong Kyun RA , Ho Sik KIM , Won Hong JU
Abstract: A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.
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公开(公告)号：US12082331B2
公开(公告)日：2024-09-03
申请号：US17918101
申请日：2021-04-21
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho Bae , Min Jae Kim , Geon Bo Sim
CPC classification number: H05H1/4652 , H01J37/3211 , H01Q1/26 , H05H1/02
Abstract: According to the present invention, provided is an inductively coupled plasma reactor including: a reaction chamber configured to provide a plasma reaction space; a ferrite core arranged to surround the plasma reaction space; and an antenna coil formed by winding a strip-shaped wire structure on the ferrite core, wherein the wire structure includes a plurality of electrically conductive wires and a covering made of a flexible material and configured to surround the plurality of electrically conductive wires.
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公开(公告)号：US12062528B2
公开(公告)日：2024-08-13
申请号：US17918103
申请日：2021-04-21
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho Bae , Min Jae Kim , Geon Bo Sim , Tae Wook Yoo
IPC: H01J37/32
CPC classification number: H01J37/32844 , H01J37/321 , H01J37/32807
Abstract: A plasma reactor for inductively coupled plasma includes: a ferrite core assembly including a ferrite core stacked body including a plurality of ferrite cores stacked and a first passage portion and a second passage portion arranged in parallel, and a ferrite core accommodating structure; a first chamber body including a first base portion configured to provide a first internal space therein, a first A-extension pipe extending from the first base portion, communicating with the first internal space and accommodated in the first passage portion, and a second A-extension pipe extending from the first base portion; and a second chamber body including a second base portion configured to provide a second internal space therein, a first B-extension pipe extending from the second base portion, and a second B-extension pipe extending from the second base portion.
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公开(公告)号：US20240128065A1
公开(公告)日：2024-04-18
申请号：US18278180
申请日：2022-03-31
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho BAE , Jong Taek LEE , Min Jae KIM
CPC classification number: H01J37/32844 , C23C16/26 , C23C16/4412 , C23C16/50 , H01J37/32449 , H01L21/02115 , H01J2237/182 , H01J2237/332
Abstract: A semiconductor manufacturing facility includes: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor.
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Patent Agency Ranking
公开(公告)号：US20240363316A1
公开(公告)日：2024-10-31
申请号：US18766571
申请日：2024-07-08
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho BAE , Min Jae KIM , Geon Bo SIM , Tae Wook YOO
IPC: H01J37/32
CPC classification number: H01J37/32844 , H01J37/321 , H01J37/32807
Abstract: A plasma reactor for inductively coupled plasma includes: a ferrite core assembly including a ferrite core stacked body including a plurality of ferrite cores stacked and a first passage portion and a second passage portion arranged in parallel, and a ferrite core accommodating structure; a first chamber body including a first base portion configured to provide a first internal space therein, a first A-extension pipe extending from the first base portion, communicating with the first internal space and accommodated in the first passage portion, and a second A-extension pipe extending from the first base portion; and a second chamber body including a second base portion configured to provide a second internal space therein, a first B-extension pipe extending from the second base portion, and a second B-extension pipe extending from the second base portion.
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公开(公告)号：US12121857B2
公开(公告)日：2024-10-22
申请号：US16973767
申请日：2019-04-17
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho Bae , Yu Jin Lee , Hyung Jun Kim , Jeong Kyun Ra , Ho Sik Kim , Won Hong Ju
CPC classification number: B01D53/8659 , F27D17/008 , G01N25/12 , B01D2257/204 , B01D2258/0216
Abstract: A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.
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7.发明公开公开(公告)号：US20230377842A1
公开(公告)日：2023-11-23
申请号：US18034373
申请日：2022-02-09
Applicant: LOT CES CO., LTD.
Inventor： Jin Ho BAE , Min Jae KIM , Sang Don CHOI
IPC: H01J37/32
CPC classification number: H01J37/321 , H01J37/32183 , H01J37/32834 , H01J37/32926
Abstract: An inductively coupled plasma apparatus for exhaust gas treatment, includes: an inductively coupled plasma reactor installed on an exhaust pipe through which exhaust gas generated from a process chamber of a semiconductor manufacturing facility is discharged; a power supply configured to supply high-frequency power to the inductively coupled plasma reactor through a transmission line; and an impedance matching unit configured to match impedance of the inductively coupled plasma reactor with impedance of the power supply, wherein the impedance matching unit includes a variable power storage element, an operation data measuring instrument measuring operation data of the inductively coupled plasma reactor, and a controller stepwise adjusting total capacitance by the variable power storage element using an operation data sampling value obtained by the operation data measuring instrument in one operation cycle and reflecting the adjusted total capacitance on starting impedance matching in a next operation cycle.
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公开(公告)号：US20230136312A1
公开(公告)日：2023-05-04
申请号：US17918101
申请日：2021-04-21
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho BAE , Min Jae KIM , Geon Bo SIM
Abstract: According to the present invention, provided is an inductively coupled plasma reactor including: a reaction chamber configured to provide a plasma reaction space; a ferrite core arranged to surround the plasma reaction space; and an antenna coil formed by winding a strip-shaped wire structure on the ferrite core, wherein the wire structure includes a plurality of electrically conductive wires and a covering made of a flexible material and configured to surround the plurality of electrically conductive wires.
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公开(公告)号：US20230134862A1
公开(公告)日：2023-05-04
申请号：US17918103
申请日：2021-04-21
Applicant: LOT CES CO., LTD. , LOT VACUUM CO., LTD.
Inventor： Jin Ho BAE , Min Jae KIM , Geon Bo SIM , Tae Wook YOO
IPC: H01J37/32
Abstract: A plasma reactor for inductively coupled plasma includes: a ferrite core assembly including a ferrite core stacked body including a plurality of ferrite cores stacked and a first passage portion and a second passage portion arranged in parallel, and a ferrite core accommodating structure; a first chamber body including a first base portion configured to provide a first internal space therein, a first A-extension pipe extending from the first base portion, communicating with the first internal space and accommodated in the first passage portion, and a second A-extension pipe extending from the first base portion; and a second chamber body including a second base portion configured to provide a second internal space therein, a first B-extension pipe extending from the second base portion, and a second B-extension pipe extending from the second base portion.
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