Heat dissipating module
    2.
    发明授权
    Heat dissipating module 有权
    散热模块

    公开(公告)号:US08929072B2

    公开(公告)日:2015-01-06

    申请号:US13332577

    申请日:2011-12-21

    IPC分类号: H05K7/20

    摘要: A heat dissipation module, comprising: a fan; and a heat dissipating fin; a heat conducting element, made of a conductive material, and composed of a first conductive component and two second conductive components in a manner that the first conductive component is disposed engaging with a heating element while allowing the two second conductive components to engage with the heat dissipating fin; and a wall element; wherein, the heat from the heating element is conducted to the first conductive component where it is further being dividedly conducted to the two second conductive components; and the air flow blowing from the fan is guided to the heating element and then it is blocked by the wall element for diverting the air flow toward the heat dissipating fin from an air intake side to an air outlet side, and then to be discharged out of the heat dissipating module through an outlet.

    摘要翻译: 一种散热模块,包括:风扇; 和散热片; 导电元件,由导电材料制成,并且由第一导电部件和两个第二导电部件组成,其中第一导电部件设置成与加热元件接合,同时允许两个第二导电部件与热接合 散热片 和墙元素; 其中,来自所述加热元件的热​​量被传导到所述第一导电部件,在所述第一导电部件中,所述第二导电部件被进一步分成两个第二导电部件; 从风扇吹出的空气流被引导到加热元件,然后被壁元件阻挡,用于将空气流朝向散热翅片从进气侧转向出气侧,然后排出 的散热模块。

    Electronic apparatus with improved heat dissipation
    3.
    发明授权
    Electronic apparatus with improved heat dissipation 失效
    具有改善散热性的电子设备

    公开(公告)号:US08542486B2

    公开(公告)日:2013-09-24

    申请号:US13015596

    申请日:2011-01-28

    摘要: An electronic apparatus with improved heat dissipation comprises a first body with a first shell and a second shell, a second body, a coupling device and a linkage device. The first shell is pivotally connected to the second shell to form an accommodation space. The first shell can pivot relative to the second shell to enlarge the accommodation space and form an opening between the first shell and the second shell. The coupling device couples the second body and the second shell to pivot the second body relative to the second shell to expose or hide the first shell. The linkage device drives the first shell to pivot relative to the second shell. When the second body pivots relative to the second shell toward a first direction, the linkage device drives the first shell to pivot relative to the second shell toward a second direction opposite to the first direction.

    摘要翻译: 具有改善的散热的电子设备包括具有第一壳体和第二壳体的第一主体,第二主体,联接装置和联动装置。 第一壳体枢转地连接到第二壳体以形成容纳空间。 第一壳体可相对于第二壳体枢转以扩大容纳空间并在第一壳体和第二壳体之间形成开口。 联接装置联接第二主体和第二壳,以使第二主体相对于第二壳枢转以露出或隐藏第一壳。 联动装置驱动第一壳体相对于第二壳体枢轴转动。 当第二主体相对于第二壳体朝向第一方向枢转时,联动装置驱动第一壳体相对于第二壳体朝向与第一方向相反的第二方向枢转。

    ELECTRONIC APPARATUS WITH IMPROVED HEAT DISSIPATION
    5.
    发明申请
    ELECTRONIC APPARATUS WITH IMPROVED HEAT DISSIPATION 失效
    具有改进散热功能的电子设备

    公开(公告)号:US20120127652A1

    公开(公告)日:2012-05-24

    申请号:US13015596

    申请日:2011-01-28

    IPC分类号: G06F1/20 H05K7/20

    摘要: An electronic apparatus with improved heat dissipation comprises a first body with a first shell and a second shell, a second body, a coupling device and a linkage device. The first shell is pivotally connected to the second shell to form an accommodation space. The first shell can pivot relative to the second shell to enlarge the accommodation space and form an opening between the first shell and the second shell. The coupling device couples the second body and the second shell to pivot the second body relative to the second shell to expose or hide the first shell. The linkage device drives the first shell to pivot relative to the second shell. When the second body pivots relative to the second shell toward a first direction, the linkage device drives the first shell to pivot relative to the second shell toward a second direction opposite to the first direction.

    摘要翻译: 具有改善的散热的电子设备包括具有第一壳体和第二壳体的第一主体,第二主体,联接装置和联动装置。 第一壳体枢转地连接到第二壳体以形成容纳空间。 第一壳体可相对于第二壳体枢转以扩大容纳空间并在第一壳体和第二壳体之间形成开口。 联接装置联接第二主体和第二壳,以使第二主体相对于第二壳枢转以露出或隐藏第一壳。 联动装置驱动第一壳体相对于第二壳体枢转。 当第二主体相对于第二壳体朝向第一方向枢转时,联动装置驱动第一壳体相对于第二壳体朝向与第一方向相反的第二方向枢转。

    Junction profile engineering using staged thermal annealing
    6.
    发明授权
    Junction profile engineering using staged thermal annealing 有权
    接头型材工程采用分段热退火

    公开(公告)号:US08058134B2

    公开(公告)日:2011-11-15

    申请号:US12618052

    申请日:2009-11-13

    IPC分类号: H01L21/336

    摘要: An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.

    摘要翻译: 退火方法包括在峰值温度大于约1200℃的晶片上进行激活退火,其中活化退火具有第一持续时间; 以及在低于所述峰值温度的缺陷恢复温度下对所述晶片进行缺陷恢复退火,持续第二持续时间。 第二个持续时间比第一个持续时间长。 退火方法在大于约1200℃的温度下不包括额外的退火步骤,并且在活化退火和缺陷恢复退火之间不存在室温冷却步骤。

    Dummy Pattern Design for Thermal Annealing
    7.
    发明申请
    Dummy Pattern Design for Thermal Annealing 有权
    用于热退火的虚拟样式设计

    公开(公告)号:US20110156149A1

    公开(公告)日:2011-06-30

    申请号:US12651029

    申请日:2009-12-31

    IPC分类号: H01L27/11 H01L21/762

    摘要: The present disclosure provides a semiconductor structure including a semiconductor substrate having a device region and a dummy region adjacent the device region; a plurality of active regions in the device region; and a plurality of dummy active regions in the dummy region, where each of the active regions has a first dimension in a first direction and a second dimension in a second direction perpendicular to the first direction, and the first dimension is substantially greater than the second dimension; and each of the dummy active regions has a third dimension in the first direction and a fourth dimension in the second direction, and the third dimension is substantially greater than the fourth dimension. The plurality of dummy active regions are configured such that thermal annealing effect in the dummy region is substantially equal to that of the device region.

    摘要翻译: 本公开提供了一种半导体结构,其包括具有器件区域和邻近器件区域的虚设区域的半导体衬底; 所述器件区域中的多个有源区; 以及所述虚拟区域中的多个虚拟有源区域,其中所述有源区域中的每一个具有在第一方向上的第一尺寸和与所述第一方向垂直的第二方向上的第二尺寸,并且所述第一尺寸基本上大于所述第二尺寸 尺寸; 并且所述虚拟有源区域中的每一个具有在所述第一方向上的第三尺寸和在所述第二方向上的第四尺寸,并且所述第三尺寸基本上大于所述第四尺寸。 多个虚拟有源区域被配置为使得虚拟区域中的热退火效应基本上等于器件区域的热退火效果。

    All-fiber color laser and light-illuminating method thereof
    8.
    发明授权
    All-fiber color laser and light-illuminating method thereof 有权
    全光纤彩色激光及其照明方法

    公开(公告)号:US07920605B2

    公开(公告)日:2011-04-05

    申请号:US12421592

    申请日:2009-04-09

    IPC分类号: H01S3/30

    摘要: An all-fiber color laser and a light-illuminating method thereof are disclosed. The steps of the light-illuminating method include: providing a fiber color laser having a pump light source and an optical fiber with a multi-level wavelength gain medium, a first grating assembly and a second grating assembly; radiating a laser via the pump light source; generating a plurality of laser beams with various wavelengths via the multi-level wavelength gain medium; adjusting the deformation of the second grating assembly to control output of the laser beams with various wavelengths; and executing periodical modulation to generate a periodical lengthwise deformation of the second grating assembly for mixing color.

    摘要翻译: 公开了全光纤彩色激光器及其照明方法。 光照射方法的步骤包括:提供具有泵浦光源的光纤颜色激光器和具有多级波长增益介质的光纤,第一光栅组件和第二光栅组件; 通过泵浦光源照射激光; 通过多级波长增益介质生成具有各种波长的多个激光束; 调整第二光栅组件的变形以控制具有各种波长的激光束的输出; 并执行周期性调制以产生用于混合颜色的第二光栅组件的周期性纵向变形。

    Junction Profile Engineering Using Staged Thermal Annealing
    9.
    发明申请
    Junction Profile Engineering Using Staged Thermal Annealing 有权
    接头型材工程使用分段热退火

    公开(公告)号:US20100210086A1

    公开(公告)日:2010-08-19

    申请号:US12618052

    申请日:2009-11-13

    IPC分类号: H01L21/336

    摘要: An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.

    摘要翻译: 退火方法包括在峰值温度大于约1200℃的晶片上进行激活退火,其中活化退火具有第一持续时间; 以及在低于所述峰值温度的缺陷恢复温度下对所述晶片进行缺陷恢复退火,持续第二持续时间。 第二个持续时间比第一个持续时间长。 退火方法在大于约1200℃的温度下不包括额外的退火步骤,并且在活化退火和缺陷恢复退火之间不存在室温冷却步骤。