摘要:
A method includes performing an anneal on a wafer. The wafer includes a wafer-edge region, and an inner region encircled by the wafer-edge region. During the anneal, a first power applied on a portion of the wafer-edge region is at least lower than a second power for annealing the inner region.
摘要:
A heat dissipation module, comprising: a fan; and a heat dissipating fin; a heat conducting element, made of a conductive material, and composed of a first conductive component and two second conductive components in a manner that the first conductive component is disposed engaging with a heating element while allowing the two second conductive components to engage with the heat dissipating fin; and a wall element; wherein, the heat from the heating element is conducted to the first conductive component where it is further being dividedly conducted to the two second conductive components; and the air flow blowing from the fan is guided to the heating element and then it is blocked by the wall element for diverting the air flow toward the heat dissipating fin from an air intake side to an air outlet side, and then to be discharged out of the heat dissipating module through an outlet.
摘要:
An electronic apparatus with improved heat dissipation comprises a first body with a first shell and a second shell, a second body, a coupling device and a linkage device. The first shell is pivotally connected to the second shell to form an accommodation space. The first shell can pivot relative to the second shell to enlarge the accommodation space and form an opening between the first shell and the second shell. The coupling device couples the second body and the second shell to pivot the second body relative to the second shell to expose or hide the first shell. The linkage device drives the first shell to pivot relative to the second shell. When the second body pivots relative to the second shell toward a first direction, the linkage device drives the first shell to pivot relative to the second shell toward a second direction opposite to the first direction.
摘要:
A method of enhancing dopant activation without suffering additional dopant diffusion, includes forming shallow and lightly-doped source/drain extension regions in a semiconductor substrate, performing a first anneal process on the source/drain extension regions, forming deep and heavily-doped source/drain regions in the substrate adjacent to the source/drain extension regions, and performing a second anneal process on source/drain regions. The first anneal process is a flash anneal process performed for a time of between about 1 millisecond and 3 milliseconds, and the second anneal process is a rapid thermal anneal process performed for a time of between about 1 second and 30 seconds.
摘要:
An electronic apparatus with improved heat dissipation comprises a first body with a first shell and a second shell, a second body, a coupling device and a linkage device. The first shell is pivotally connected to the second shell to form an accommodation space. The first shell can pivot relative to the second shell to enlarge the accommodation space and form an opening between the first shell and the second shell. The coupling device couples the second body and the second shell to pivot the second body relative to the second shell to expose or hide the first shell. The linkage device drives the first shell to pivot relative to the second shell. When the second body pivots relative to the second shell toward a first direction, the linkage device drives the first shell to pivot relative to the second shell toward a second direction opposite to the first direction.
摘要:
An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.
摘要:
The present disclosure provides a semiconductor structure including a semiconductor substrate having a device region and a dummy region adjacent the device region; a plurality of active regions in the device region; and a plurality of dummy active regions in the dummy region, where each of the active regions has a first dimension in a first direction and a second dimension in a second direction perpendicular to the first direction, and the first dimension is substantially greater than the second dimension; and each of the dummy active regions has a third dimension in the first direction and a fourth dimension in the second direction, and the third dimension is substantially greater than the fourth dimension. The plurality of dummy active regions are configured such that thermal annealing effect in the dummy region is substantially equal to that of the device region.
摘要:
An all-fiber color laser and a light-illuminating method thereof are disclosed. The steps of the light-illuminating method include: providing a fiber color laser having a pump light source and an optical fiber with a multi-level wavelength gain medium, a first grating assembly and a second grating assembly; radiating a laser via the pump light source; generating a plurality of laser beams with various wavelengths via the multi-level wavelength gain medium; adjusting the deformation of the second grating assembly to control output of the laser beams with various wavelengths; and executing periodical modulation to generate a periodical lengthwise deformation of the second grating assembly for mixing color.
摘要:
An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.
摘要:
A laser apparatus with all optical-fiber includes a plurality of pumping light sources in different wave bands and an optical-fiber laser system. The optical-fiber laser system includes an optical fiber at least doped with erbium (Er) element and doped with or not doped with ytterbium (Yb) element according to a need. The optical-fiber laser system outputs a laser light through the pumping light source.