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    DYNAMIC GAS BLENDING SYSTEM AND PROCESS FOR PRODUCING MIXTURES WITH MINIMAL VARIATION WITHIN TOLERANCE LIMITS AND INCREASED GAS UTILIZATION
    2.
    发明申请
    DYNAMIC GAS BLENDING SYSTEM AND PROCESS FOR PRODUCING MIXTURES WITH MINIMAL VARIATION WITHIN TOLERANCE LIMITS AND INCREASED GAS UTILIZATION 审中-公开
    动态气体混合系统和生产具有最小变化的混合物在容忍限度和增加的气体利用中的方法

    公开(公告)号：US20150217245A1

    公开(公告)日：2015-08-06

    申请号：US14613088

    申请日：2015-02-03

    申请人： XUEMEI SONG ,  CARL RICHENBERG ,  LLOYD A. BROWN

    发明人： XUEMEI SONG ,  CARL RICHENBERG ,  LLOYD A. BROWN

    IPC分类号： B01F15/00 ,  G01N1/22 ,  B01F3/02

    CPC分类号： G05D11/138 ,  B01F15/0479 ,  G05D11/132

    摘要： A dynamic blending system and process to produce a mixture of a desired target concentration with minimal tolerance variation and no waste gas generation is provided. The mixture made from the blending process can be utilized without the need to vent. The inventive system and process enables the ability to perform relatively small adjustments to the concentration of the blended gas mixture. The system and process also includes specifically designed sampling protocols that reduce measurement error.

    摘要翻译： 提供了一种动态混合系统和方法，以产生具有最小容限变化和无废气产生的期望目标浓度的混合物。 可以利用从混合过程制成的混合物，而不需要排气。 本发明的系统和方法使得能够对混合气体混合物的浓度进行相对较小的调整。 该系统和过程还包括专门设计的采样协议，可减少测量误差。

    COMPOSITIONS FOR EXTENDING ION SOURCE LIFE AND IMPROVING ION SOURCE PERFORMANCE DURING CARBON IMPLANTATION
    3.
    发明申请
    COMPOSITIONS FOR EXTENDING ION SOURCE LIFE AND IMPROVING ION SOURCE PERFORMANCE DURING CARBON IMPLANTATION 有权
    用于延长离子源寿命的组合物，并在碳化物植入过程中改善离子源性能

    公开(公告)号：US20130341568A1

    公开(公告)日：2013-12-26

    申请号：US13527684

    申请日：2012-06-20

    申请人： Ashwini K. Sinha ,  Lloyd A. Brown ,  Serge Campeau

    发明人： Ashwini K. Sinha ,  Lloyd A. Brown ,  Serge Campeau

    IPC分类号： C09K3/00

    CPC分类号： C09K3/00 ,  C23C14/564

    摘要： A novel method and system for extending ion source life and improving ion source performance during carbon implantation are provided. Particularly, the carbon ion implant process involves utilizing a dopant gas mixture comprising carbon monoxide and one or more fluorine-containing gas with carbon represented by the formula CxFy wherein x≧1 and y≧1. At least one fluorine containing gases with carbon is contained in the mixture at about 3-12 volume percent (vol %) based on the volume of the dopant gas mixture. Fluoride ions, radicals or combinations thereof are released from the ionized dopant gas mixture and reacts with deposits derived substantially from carbon along at least one of the surfaces of the repeller electrodes, extraction electrodes and the chamber to reduce the overall amount of deposits. In this manner, a single dopant gas mixture provides carbon ions and removes problematic deposits typically encountered during carbon implantation.

    摘要翻译： 提供了一种用于在碳注入期间延长离子源寿命和提高离子源性能的新颖方法和系统。 特别地，碳离子注入工艺包括利用包含一氧化碳和一种或多种含氟气体的掺杂剂气体混合物与式C x F y表示的碳，其中x> = 1且y> = 1。 基于掺杂剂气体混合物的体积，在混合物中含有至少一种含氟气体以约3-12体积％（体积％）包含在混合物中。 氟离子，自由基或其组合从离子化掺杂气体混合物中释放出来，并与排斥电极，引出电极和室的至少一个表面基本上由碳衍生的沉积物反应，以减少沉积物的总量。 以这种方式，单一掺杂剂气体混合物提供碳离子并去除在碳注入期间通常遇到的有问题的沉积物。

    SUPPLY SOURCE AND METHOD FOR ENRICHED SELENIUM ION IMPLANTATION
    7.
    发明申请
    SUPPLY SOURCE AND METHOD FOR ENRICHED SELENIUM ION IMPLANTATION 有权
    供应源和方法用于增强的离子植入

    公开(公告)号：US20140329377A1

    公开(公告)日：2014-11-06

    申请号：US14267390

    申请日：2014-05-01

    申请人： Douglas C. Heiderman ,  Ashwini K. Sinha ,  Lloyd A. Brown

    发明人： Douglas C. Heiderman ,  Ashwini K. Sinha ,  Lloyd A. Brown

    IPC分类号： H01L21/265

    CPC分类号： H01L21/265 ,  C23C14/00 ,  C23C14/16 ,  C23C14/48 ,  F17C1/00 ,  H01J37/3171 ,  H01J2237/08 ,  Y02E60/321 ,  Y10T137/7781

    摘要： A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.

    摘要翻译： 提供了一种用于离子注入同位素富集的含硒源材料的新方法。 选择源材料并富集硒的特定质量同位素，从而富集高于天然丰度水平。 本发明的方法允许减少气体消耗并减少浪费。 源材料优选地从次大气储存和输送装置储存和递送，以在硒离子注入过程中增强安全性和可靠性。

    METHOD FOR EXTENDING LIFETIME OF AN ION SOURCE
    8.
    发明申请
    METHOD FOR EXTENDING LIFETIME OF AN ION SOURCE 审中-公开
    延长离子源寿命的方法

    公开(公告)号：US20120235058A1

    公开(公告)日：2012-09-20

    申请号：US13229939

    申请日：2011-09-12

    申请人： Ashwini SINHA ,  Lloyd A. BROWN

    发明人： Ashwini SINHA ,  Lloyd A. BROWN

    IPC分类号： H01J27/02

    CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J2237/022

    摘要： This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

    摘要翻译： 本发明部分地涉及用于防止或减少在半导体和微电子制造中使用的离子注入机的离子源组分中沉积物的形成和/或积累的方法。 离子源组件包括电离室和包含在电离室内的一个或多个组分。 该方法包括向电离室中引入掺杂气体，其中掺杂剂气体具有足以防止或减少离子化过程中氟离子/自由基形成的组成。 然后在足以防止或减少离子化室内部和/或包含在电离室内的一种或多种组分上的沉积物的形成和/或积累的条件下将掺杂气体电离。 沉积物对离子注入机的正常运行产生不利影响，导致频繁的停机时间并降低刀具利用率。