公开(公告)号：US09298110B2

公开(公告)日：2016-03-29

申请号：US13046303

申请日：2011-03-11

申请人： Jens Arno Steinhoff ,  Vadim Yevgenyevich Banine ,  Richard Joseph Bruls ,  Erik Roelof Loopstra ,  Hendrik Antony Johannes Neerhof ,  Adrianus Johannes Maria Van Dijk ,  Andrei Mikhailovich Yakunin ,  Luigi Scaccabarozzi

发明人： Jens Arno Steinhoff ,  Vadim Yevgenyevich Banine ,  Richard Joseph Bruls ,  Erik Roelof Loopstra ,  Hendrik Antony Johannes Neerhof ,  Adrianus Johannes Maria Van Dijk ,  Andrei Mikhailovich Yakunin ,  Luigi Scaccabarozzi

IPC分类号： G03B27/42 ,  G03F7/20 ,  H05G2/00

CPC分类号： G03F7/70916 ,  H05G2/003

摘要： A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.

摘要翻译： 在EUV辐射源装置中使用污染物阱。 产生EUV辐射束并通过低压气体气氛聚焦成虚拟源点。 EUV辐射在其通过的低压氢气氛中产生等离子体。 当辐射束接近虚拟源点时，包括电极的污染物陷阱位于辐射束内或周围。 DC偏置源连接到电极以产生电场，该电场被定向以偏离由等离子体带负电的光束路径污染物颗粒。 附加的RF电极和/或电离器增强等离子体以增加颗粒的充电。 偏转电极可以用RF偏压短时间操作，以确保增强等离子体的耗散。

公开(公告)号：US08477285B2

公开(公告)日：2013-07-02

申请号：US12973844

申请日：2010-12-20

申请人： Dirk Heinrich Ehm ,  Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Almut Czap ,  Mona Nagel ,  Jacques Cor Johan van der Donck ,  Jetske Karina Stortelder ,  Marijn Sandtke ,  Maria Isabel Catalina Caballero ,  Luigi Scaccabarozzi

发明人： Dirk Heinrich Ehm ,  Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Almut Czap ,  Mona Nagel ,  Jacques Cor Johan van der Donck ,  Jetske Karina Stortelder ,  Marijn Sandtke ,  Maria Isabel Catalina Caballero ,  Luigi Scaccabarozzi

IPC分类号： G03B27/52 ,  G03B27/42

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70975 ,  G03F7/70983 ,  G21K1/062

摘要： An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

摘要翻译： 光学组件安装在用于EUV微光刻的投影曝光设备（101）中，并且包括至少一个真空室（70,71,68a），至少一个光学元件（6,7; 65,66,63） 所述光学元件（6,7; 65,66,63）具有光学表面（18），所述光学表面被布置成被所述投影曝光设备的有用束束（3）撞击 101）和被构造成清洁光学表面（18）的清洁装置（72）。 清洁装置（72）构造成在真空室（70,71,68a）内的气体压力下进行光学表面（18）的粒子清洁，该气体压力高于用于进行曝光操作的真空压力（po） 投影曝光装置（101）。 结果，可以可靠地清洁具有布置成被有用的束束撞击的各个光学表面的光学元件的外来颗粒。

公开(公告)号：US20120127467A1

公开(公告)日：2012-05-24

申请号：US13388267

申请日：2010-07-02

申请人： Vitalii Ivanov ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Luigi Scaccabarozzi ,  Nikolay Nikolaevich Iosad

发明人： Vitalii Ivanov ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Luigi Scaccabarozzi ,  Nikolay Nikolaevich Iosad

IPC分类号： G01J3/28

CPC分类号： G03F1/84 ,  G01N21/6408 ,  G01N21/6489 ,  G01N21/65 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/956 ,  G03F1/24

摘要： Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

摘要翻译： 用于检查物体的方法和系统包括使用光谱技术来检测物体表面上的不需要的颗粒，这是由于不同的物质与不同的物质相比，由于不同的物质而与被检查物体的不同响应。 可以使用来自物体表面的二次光子发射的时间分辨光谱和/或能量分辨光谱来获得拉曼和光致发光光谱。 待检查的物体可以是例如在光刻工艺中使用的图案形成装置，例如掩模版，在这种情况下，例如可以检测到金属，金属氧化物或有机颗粒的存在。 所述方法和装置是高度敏感的，例如能够检测EUV掩模版图案侧的小颗粒（小于100nm，特别是低于50nm）。

公开(公告)号：US09122178B2

公开(公告)日：2015-09-01

申请号：US13388267

申请日：2010-07-02

申请人： Vitalii Ivanov ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Luigi Scaccabarozzi ,  Nikolay Nikolaevich Iosad

发明人： Vitalii Ivanov ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Luigi Scaccabarozzi ,  Nikolay Nikolaevich Iosad

IPC分类号： G01J3/28 ,  G01N21/00 ,  G03F1/84 ,  G01N21/64 ,  G01N21/65 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  G03F1/24

CPC分类号： G03F1/84 ,  G01N21/6408 ,  G01N21/6489 ,  G01N21/65 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/956 ,  G03F1/24

摘要： Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

摘要翻译： 用于检查物体的方法和系统包括使用光谱技术来检测物体表面上的不需要的颗粒，这是由于不同的物质与不同的物质相比，由于不同的物质而与被检查物体的不同响应。 可以使用来自物体表面的二次光子发射的时间分辨光谱和/或能量分辨光谱来获得拉曼和光致发光光谱。 待检查的物体可以是例如在光刻工艺中使用的图案形成装置，例如掩模版，在这种情况下，例如可以检测到金属，金属氧化物或有机颗粒的存在。 所述方法和装置是高度敏感的，例如能够检测EUV掩模版图案侧的小颗粒（小于100nm，特别是低于50nm）。

公开(公告)号：US08830455B2

公开(公告)日：2014-09-09

申请号：US12805808

申请日：2010-08-19

申请人： Arie Jeffrey Den Boef ,  Vadim Yevgenyevich Banine ,  Sander Frederik Wuister ,  Luigi Scaccabarozzi

发明人： Arie Jeffrey Den Boef ,  Vadim Yevgenyevich Banine ,  Sander Frederik Wuister ,  Luigi Scaccabarozzi

IPC分类号： G01N21/00

CPC分类号： G01N21/95623

摘要： In an aspect, an inspection method for detecting the presence or absence of a defect on an object, the object comprising a recess having a physical depth, is disclosed. The method includes directing radiation at the object, the radiation having a wavelength that is substantially equal to twice an optical depth of the recess, detecting radiation that is re-directed by the object or a defect on the object, and determining the presence or absence of a defect from the re-directed radiation.

摘要翻译： 在一方面，公开了一种用于检测物体上缺陷的存在或不存在的检查方法，该物体包括具有物理深度的凹部。 该方法包括在物体上引导辐射，辐射具有基本上等于凹部的光学深度的两倍的波长，检测由对象重新引导的辐射或物体上的缺陷，以及确定存在或不存在 来自重新导向的辐射的缺陷。

公开(公告)号：US20140146297A1

公开(公告)日：2014-05-29

申请号：US13883083

申请日：2011-10-06

申请人： Yuri Vainer ,  Vadim Yevgenyevich Banine ,  Luigi Scaccabarozzi ,  Arie Jeffrey Den Boef

发明人： Yuri Vainer ,  Vadim Yevgenyevich Banine ,  Luigi Scaccabarozzi ,  Arie Jeffrey Den Boef

IPC分类号： G03F7/20 ,  G01N21/956

CPC分类号： G03F7/7085 ,  G01N21/94 ,  G01N21/956 ,  G01N21/95623 ,  G01N2021/95676 ,  G03F1/24 ,  G03F1/84 ,  G03F7/70916

摘要： An EUV lithography reticle is inspected to detect contaminant particles. The inspection apparatus comprises illumination optics with primary radiation. An imaging optical system with plural branches is arranged to form and detect a plurality of images, each branch having an image sensor and forming its image with a different portion of radiation received from the illuminated article. A processor combines information from the detected images to report on the presence and location of contaminant particles. In one or more branches the primary radiation is filtered out, so that the detected image is formed using only secondary radiation emitted by contaminant material in response to the primary radiation. In a dark field imaging branch using the scattered primary radiation, a spatial filter blocks spatial frequency components associated with periodic features of the article under inspection, to allow detection of particles which cannot be detected by secondary radiation.

摘要翻译： 检查EUV光刻掩模版以检测污染物颗粒。 检查装置包括具有初级辐射的照明光学器件。 布置具有多个分支的成像光学系统以形成和检测多个图像，每个分支具有图像传感器并且形成具有从照明物品接收的辐射的不同部分的图像。 处理器结合来自检测图像的信息，报告污染物颗粒的存在和位置。 在一个或多个分支中，主辐射被滤出，使得仅使用由污染物材料响应于初级辐射发射的二次辐射形成检测到的图像。 在使用散射的初级辐射的暗场成像分支中，空间滤波器阻挡与被检查物品的周期特征相关联的空间频率分量，以允许检测不能被二次辐射检测的粒子。

公开(公告)号：US20130070218A1

公开(公告)日：2013-03-21

申请号：US13580364

申请日：2011-03-03

申请人： Vladimir Vitalevich Ivanov ,  Pavel Stanislavovich Antsiferov ,  Yurii Victorovitch Sidelnikov ,  Luigi Scaccabarozzi ,  Hendrik Antony Johannes Neerhof ,  Andrei Mikhailovich Yakunin ,  Erik Roelof Loopstra ,  Vadim Yevgenyevich Banine ,  Richard Joseph Bruls

发明人： Vladimir Vitalevich Ivanov ,  Pavel Stanislavovich Antsiferov ,  Yurii Victorovitch Sidelnikov ,  Luigi Scaccabarozzi ,  Hendrik Antony Johannes Neerhof ,  Andrei Mikhailovich Yakunin ,  Erik Roelof Loopstra ,  Vadim Yevgenyevich Banine ,  Richard Joseph Bruls

IPC分类号： G03B27/52 ,  C23F1/08

CPC分类号： G03F7/70916

摘要： A system for removing contaminant particles from the path of the beam of EUV radiation is provided in which at least a first AC voltage is provided to a pair of electrodes on opposite sides of the path of the beam of EUV radiation as a first stage of a regime of voltages and, as a second stage of the regime of voltages, a DC voltage is provided to the electrodes.

摘要翻译： 提供了一种用于从EUV辐射束的路径去除污染物颗粒的系统，其中至少第一AC电压被提供给EUV辐射束的路径的相对侧上的一对电极，作为第一级 作为电压状态的第二阶段，向电极提供直流电压。

公开(公告)号：US20140340663A1

公开(公告)日：2014-11-20

申请号：US14345118

申请日：2012-08-21

申请人： Luigi Scaccabarozzi ,  Vadim Yevgenyevich Banine ,  Bernardus Antonius Johannes Luttikhuis ,  Roelof Koole ,  Hendrikus Jan Wondergem ,  Petrus Carolus Johannes Graat

发明人： Luigi Scaccabarozzi ,  Vadim Yevgenyevich Banine ,  Bernardus Antonius Johannes Luttikhuis ,  Roelof Koole ,  Hendrikus Jan Wondergem ,  Petrus Carolus Johannes Graat

IPC分类号： G03F7/20

CPC分类号： G03F7/70783 ,  G01B11/16 ,  G03F1/84 ,  G03F7/70141 ,  G03F7/7085 ,  G03F7/70916

摘要： A lithographic patterning device deformation monitoring apparatus (38) comprising a radiation source (40), an imaging device (42), and a processor (50). The radiation source being configured to direct a plurality of beams of radiation (41) with a predetermined diameter towards a lithographic patterning device (MA) such that they are reflected by the patterning device. The imaging detector configured to detect spatial positions of the radiation beams (41′) after they have been reflected by the patterning device. The processor configured to monitor the spatial positions of the radiation beams and thereby determine the presence of a patterning device deformation. The imaging detector has an collection angle which is smaller than a minimum angle of diffraction of the radiation beams.

摘要翻译： 一种包括辐射源（40），成像装置（42）和处理器（50）的平版印刷图案形成装置变形监测装置（38）。 辐射源被配置为将多个具有预定直径的辐射光束引向平版印刷图案形成装置（MA），使得它们被图案形成装置反射。 该成像检测器被配置为在被图案形成装置反射之后检测辐射束（41'）的空间位置。 处理器被配置为监视辐射束的空间位置，从而确定图案形成装置变形的存在。 成像检测器的收集角度小于辐射束的最小衍射角。

公开(公告)号：US20110222040A1

公开(公告)日：2011-09-15

申请号：US13046303

申请日：2011-03-11

申请人： Jens Arno STEINHOFF ,  Vadim Yevgenyevich BANINE ,  Richard Joseph BRULS ,  Erik Roelof LOOPSTRA ,  Hendrik Antony Johannes NEERHOF ,  Adrianus Johannes Maria VAN DIJK ,  Andrei Mikhailovich YAKUNIN ,  Luigi SCACCABAROZZI

发明人： Jens Arno STEINHOFF ,  Vadim Yevgenyevich BANINE ,  Richard Joseph BRULS ,  Erik Roelof LOOPSTRA ,  Hendrik Antony Johannes NEERHOF ,  Adrianus Johannes Maria VAN DIJK ,  Andrei Mikhailovich YAKUNIN ,  Luigi SCACCABAROZZI

IPC分类号： G03B27/54 ,  G21K5/00 ,  G01J3/10

CPC分类号： G03F7/70916 ,  H05G2/003

摘要： A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.

摘要翻译： 在EUV辐射源装置中使用污染物阱。 产生EUV辐射束并通过低压气体气氛聚焦成虚拟源点。 EUV辐射在其通过的低压氢气氛中产生等离子体。 当辐射束接近虚拟源点时，包括电极的污染物陷阱位于辐射束内或周围。 DC偏置源连接到电极以产生电场，该电场被定向以偏离由等离子体带负电的光束路径污染物颗粒。 附加的RF电极和/或电离器增强等离子体以增加颗粒的充电。 偏转电极可以用RF偏压短时间操作，以确保增强等离子体的耗散。

公开(公告)号：US20110149276A1

公开(公告)日：2011-06-23

申请号：US12904610

申请日：2010-10-14

申请人： Luigi SCACCABAROZZI ,  Vadim Yevgenyevich Banine ,  Christian Wagner

发明人： Luigi SCACCABAROZZI ,  Vadim Yevgenyevich Banine ,  Christian Wagner

IPC分类号： G01N21/01 ,  G03B27/42

CPC分类号： G01N21/94 ,  G01N2021/95676 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A detector detects radiation from a mask to form an image, but the focal plane of the image is in front of the mask. Any particles arranged on the mask will be in focus. However, the pattern on the mask will be out of focus. It is therefore possible to detect the existence and location of particles on a mask having an arbitrary pattern. The depth of field of the detector is small and the focal plane is no further from the surface of the patterning device than two times the depth of field.

摘要翻译： 检测器检测来自掩模的辐射以形成图像，但是图像的焦平面位于掩模的前面。 布置在面罩上的任何颗粒将被聚焦。 然而，面具上的图案将会失焦。 因此可以检测具有任意图案的掩模上的颗粒的存在和位置。 检测器的景深较小，焦平面不比图案形成装置的表面高两倍的景深。