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17 条记录 (耗时 0.017 秒)

    INTEGRATED CIRCUIT INCLUDING SILICON CONTROLLED RECTIFIER
    2.
    发明申请
    INTEGRATED CIRCUIT INCLUDING SILICON CONTROLLED RECTIFIER 审中-公开
    集成电路，包括硅控制整流器

    公开(公告)号：US20140167099A1

    公开(公告)日：2014-06-19

    申请号：US14004182

    申请日：2012-03-09

    申请人： Markus Paul Josef Mergens

    发明人： Markus Paul Josef Mergens

    IPC分类号： H01L29/87

    CPC分类号： H01L29/87 ,  H01L27/0262

    摘要： An integrated circuit includes a protected circuit. The integrated circuit further includes a silicon controlled rectifier including a sequence of a first p-type region, a second n-type region, a third p-type region and a fourth n-type region. The first n-type region is electrically coupled to the protected circuit. The integrated circuit further includes a first pn junction diode including a first semiconductor zone and one of the group including the second n-type region and the third p-type region as a second semiconductor zone. A conductivity type of the first semiconductor zone is opposite to the conductivity type of the second semiconductor zone. The integrated circuit further includes a first trigger circuit electrically coupled to the first semiconductor zone.

    摘要翻译： 集成电路包括受保护的电路。 集成电路还包括可控硅整流器，其包括第一p型区域，第二n型区域，第三p型区域和第四n型区域的序列。 第一n型区域电耦合到受保护的电路。 集成电路还包括第一pn结二极管，其包括第一半导体区和包括第二n型区和第三p型区的组中的一个作为第二半导体区。 第一半导体区的导电类型与第二半导体区的导电类型相反。 集成电路还包括电耦合到第一半导体区的第一触发电路。

    Electrostatic discharge protection silicon controlled rectifier (ESD-SCR) for silicon germanium technologies
    4.
    发明授权
    Electrostatic discharge protection silicon controlled rectifier (ESD-SCR) for silicon germanium technologies 有权
    用于硅锗技术的静电放电保护硅控整流器（ESD-SCR）

    公开(公告)号：US06770918B2

    公开(公告)日：2004-08-03

    申请号：US10238699

    申请日：2002-09-10

    申请人： Cornelius Christian Russ ,  John Armer ,  Markus Paul Josef Mergens ,  Phillip Czeslaw Jozwiak

    发明人： Cornelius Christian Russ ,  John Armer ,  Markus Paul Josef Mergens ,  Phillip Czeslaw Jozwiak

    IPC分类号： H01L2972

    CPC分类号： H01L29/7436 ,  H01L27/0262 ,  H01L29/165 ,  H01L29/7378 ,  H01L29/861

    摘要： An electrostatic discharge (ESD) protection device having a silicon controlled rectifier (SCR) for protecting circuitry of an integrated circuit (IC). The SCR includes a N-doped layer disposed over a substrate and a first P doped region disposed over the N-doped layer. At least one first N+ doped region forming a cathode is disposed over the P-doped region and coupled to ground. The at least one first N+ doped region, first P-doped region, and N-doped layer form a vertical NPN transistor of the SCR. A second P doped region forming an anode is coupled to a protected pad. The second P doped region is disposed over the N-doped layer, and is laterally positioned and electrically isolated with respect to the first P doped region. The second P doped region, N-doped layer, and first P doped region form a lateral PNP transistor of the SCR.

    摘要翻译： 一种具有用于保护集成电路（IC）的电路的可控硅整流器（SCR）的静电放电（ESD）保护装置。 SCR包括设置在衬底上的N掺杂层和设置在N掺杂层上的第一P掺杂区。 形成阴极的至少一个第一N +掺杂区域设置在P掺杂区域上并耦合到地。 至少一个第一N +掺杂区，第一P掺杂区和N掺杂层形成SCR的垂直NPN晶体管。 形成阳极的第二P掺杂区域被耦合到受保护的焊盘。 第二P掺杂区域设置在N掺杂层上方，并相对于第一P掺杂区域横向定位并电隔离。 第二P掺杂区，N掺杂层和第一P掺杂区形成SCR的横向PNP晶体管。

    Electrostatic discharge (ESD) protection device with simultaneous and distributed self-biasing for multi-finger turn-on
    7.
    发明授权
    Electrostatic discharge (ESD) protection device with simultaneous and distributed self-biasing for multi-finger turn-on 有权
    静电放电（ESD）保护装置，具有同时分布的自适应多指开启

    公开(公告)号：US07372681B2

    公开(公告)日：2008-05-13

    申请号：US11105103

    申请日：2005-04-13

    申请人： John Armer ,  Markus Paul Josef Mergens ,  Phillip Czeslaw Jozwiak ,  Cornelius Christian Russ

    发明人： John Armer ,  Markus Paul Josef Mergens ,  Phillip Czeslaw Jozwiak ,  Cornelius Christian Russ

    IPC分类号： H02H9/00 ,  H02H3/20 ,  H02H9/04 ,  H02H1/00 ,  H02H1/04 ,  H02H3/22 ,  H02H9/06 ,  H01C7/12

    CPC分类号： H01L29/0847 ,  H01L27/0266 ,  H01L29/0653 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electrostatic discharge (ESD) protection circuit for a semiconductor integrated circuit (IC) that protects core circuitry of the IC during normal operations, and shunts ESD events during non-powered mode of the IC. The ESD protection circuitry includes a multi-fingered MOS transistor, each finger respectively adapted for coupling between an I/O pad and a first supply line of the IC. An ESD detector is coupled to the I/O pad via a first terminal, and a second terminal is adapted for coupling to a second supply line potential of the IC. A parasitic capacitance is formed between the second supply line potential of the IC and the first supply line potential. A transfer circuit is coupled to a third terminal of the ESD detector and is adapted for biasing at least one gate respectively associated with at least one finger of the multi-fingered MOS transistor.

    摘要翻译： 用于在正常操作期间保护IC的核心电路的半导体集成电路（IC）的静电放电（ESD）保护电路，并且在IC的非供电模式期间分流ESD事件。 ESD保护电路包括多指MOS晶体管，每个手指分别适于在IC的I / O焊盘和第一电源线之间耦合。 ESD检测器经由第一端子耦合到I / O焊盘，并且第二端子适于耦合到IC的第二电源线电位。 在IC的第二供电线电位和第一供电线电位之间形成寄生电容。 传输电路耦合到ESD检测器的第三端子，并且适于偏置分别与多指MOS晶体管的至少一个手指相关联的至少一个栅极。