公开(公告)号：US20050260420A1

公开(公告)日：2005-11-24

申请号：US10404195

申请日：2003-04-01

申请人： Martha Collins ,  Lisa Deis ,  John Kirner ,  James Mac Dougall ,  Brian Peterson ,  Scott Weigel

发明人： Martha Collins ,  Lisa Deis ,  John Kirner ,  James Mac Dougall ,  Brian Peterson ,  Scott Weigel

IPC分类号： H01L21/768 ,  C23C18/12 ,  C23C18/14 ,  H01B3/46 ,  H01L21/316 ,  H01L23/522 ,  B32B9/04 ,  B05D3/02

CPC分类号： C23C18/14 ,  C23C18/1208 ,  C23C18/127 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31663

摘要： Low dielectric materials and films comprising same have been identified for improved performance when in integrated circuits as well as a method and a mixture for making same. In one embodiment of the invention, there is provided a mixture for forming a porous, low-k dielectric material comprising: at least one silica source having an at least one silicon atom and an organic group comprising carbon and hydrogen atoms attached thereto wherein at least one hydrogen atom within the organic group is removable upon exposure to an ionizing radiation source; and at least one porogen wherein the ratio of the weight of at least one porogen to the weight of the at least one porogen and SiO2 provided by the at least one silica source is 0.4 or greater. The mechanical and other properties of the porous, silica-based material are improved via exposure to the ionizing radiation source.

摘要翻译： 已经鉴定了低介电材料和包含它们的薄膜，以便在集成电路中提高性能以及用于制造其的方法和混合物。 在本发明的一个实施方案中，提供了一种用于形成多孔低k电介质材料的混合物，其包括：至少一个二氧化硅源，其具有至少一个硅原子和包含与其连接的碳原子和氢原子的有机基团，其中至少一个 有机基团中的一个氢原子在暴露于电离辐射源时是可去除的; 和至少一种造孔剂，其中由至少一种二氧化硅源提供的至少一种致孔剂的重量与至少一种致孔剂和SiO 2的重量的比例为0.4或更大。 通过暴露于电离辐射源，改善了多孔二氧化硅基材料的机械性能和其它性能。