公开(公告)号：US20060249713A1

公开(公告)日：2006-11-09

申请号：US11484049

申请日：2006-07-11

申请人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Thomas Deis ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Thomas Deis ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01B1/12

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

公开(公告)号：US20050260420A1

公开(公告)日：2005-11-24

申请号：US10404195

申请日：2003-04-01

申请人： Martha Collins ,  Lisa Deis ,  John Kirner ,  James Mac Dougall ,  Brian Peterson ,  Scott Weigel

发明人： Martha Collins ,  Lisa Deis ,  John Kirner ,  James Mac Dougall ,  Brian Peterson ,  Scott Weigel

IPC分类号： H01L21/768 ,  C23C18/12 ,  C23C18/14 ,  H01B3/46 ,  H01L21/316 ,  H01L23/522 ,  B32B9/04 ,  B05D3/02

CPC分类号： C23C18/14 ,  C23C18/1208 ,  C23C18/127 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31663

摘要： Low dielectric materials and films comprising same have been identified for improved performance when in integrated circuits as well as a method and a mixture for making same. In one embodiment of the invention, there is provided a mixture for forming a porous, low-k dielectric material comprising: at least one silica source having an at least one silicon atom and an organic group comprising carbon and hydrogen atoms attached thereto wherein at least one hydrogen atom within the organic group is removable upon exposure to an ionizing radiation source; and at least one porogen wherein the ratio of the weight of at least one porogen to the weight of the at least one porogen and SiO2 provided by the at least one silica source is 0.4 or greater. The mechanical and other properties of the porous, silica-based material are improved via exposure to the ionizing radiation source.

摘要翻译： 已经鉴定了低介电材料和包含它们的薄膜，以便在集成电路中提高性能以及用于制造其的方法和混合物。 在本发明的一个实施方案中，提供了一种用于形成多孔低k电介质材料的混合物，其包括：至少一个二氧化硅源，其具有至少一个硅原子和包含与其连接的碳原子和氢原子的有机基团，其中至少一个 有机基团中的一个氢原子在暴露于电离辐射源时是可去除的; 和至少一种造孔剂，其中由至少一种二氧化硅源提供的至少一种致孔剂的重量与至少一种致孔剂和SiO 2的重量的比例为0.4或更大。 通过暴露于电离辐射源，改善了多孔二氧化硅基材料的机械性能和其它性能。

公开(公告)号：US20050196974A1

公开(公告)日：2005-09-08

申请号：US11060371

申请日：2005-02-18

申请人： Scott Weigel ,  Shrikant Khot ,  James MacDougall ,  Thomas Braymer ,  John Kirner ,  Brian Peterson

发明人： Scott Weigel ,  Shrikant Khot ,  James MacDougall ,  Thomas Braymer ,  John Kirner ,  Brian Peterson

IPC分类号： C08L83/04 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  C09D201/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/31695

摘要： Silica-based materials and films having a dielectric constant of 3.7 or below and compositions and methods for making and using same are disclosed herein. In one aspect, there is provided a composition for preparing a silica-based material comprising an at least one silica source, a solvent, an at least one porogen, optionally a catalyst, and optionally a flow additive wherein the solvent boils at a temperature ranging from 90° C. to 170° C. and is selected from the group of compounds represented by the following formulas: HO—CHR8—CHR9—CH2—CHR10R11 where R8, R9, R10 and R11 can independently be an alkyl group ranging from 1 to 4 carbon atoms or a hydrogen atom; and R12—CO—R13 where R12 is a hydrocarbon group having from 3 to 6 carbon atoms; R13 is a hydrocarbon group having from 1 to 3 carbon atoms; and mixtures thereof.

摘要翻译： 本文公开了具有3.7或更低介电常数的二氧化硅基材料和膜及其制备和使用方法。 在一个方面，提供了一种用于制备二氧化硅基材料的组合物，其包含至少一种二氧化硅源，溶剂，至少一种致孔剂，任选的催化剂和任选的流动添加剂，其中溶剂在温度范围内沸腾 从90℃至170℃，并且选自由下式表示的化合物组：HO-CHR 8 -CHR 9 -CH 2 其中R 8，R 9，R 10，R 10，R 10，R 10， R 11和R 11可以独立地为1至4个碳原子的烷基或氢原子; 和R 12 -CO-R 13其中R 12是具有3至6个碳原子的烃基; R 13是具有1至3个碳原子的烃基; 及其混合物。

公开(公告)号：US20050116346A1

公开(公告)日：2005-06-02

申请号：US10964499

申请日：2004-10-13

申请人： John Kirner ,  James MacDougall ,  Brian Peterson ,  Scott Weigel ,  Thomas Deis ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： John Kirner ,  James MacDougall ,  Brian Peterson ,  Scott Weigel ,  Thomas Deis ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01L21/768 ,  C01B33/16 ,  H01B3/12 ,  H01B3/46 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  B32B9/04

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249979

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 这些材料的特征在于具有约3.7或更小的介电常数（kappa）的介电常数; 来自材料的介电常数的部分归一化的壁弹性模量（E 0）为约15GPa或更大; 金属杂质含量为约500ppm以下。 还公开了低介电常数材料，其介电常数小于约1.95，并且部分源于材料的介电常数导出的归一化的壁弹性模量（E 0）大于约26 GPa。

公开(公告)号：US20060249818A1

公开(公告)日：2006-11-09

申请号：US11484075

申请日：2006-07-11

申请人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01B1/12 ,  H01B1/00

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.