公开(公告)号：US20050260420A1

公开(公告)日：2005-11-24

申请号：US10404195

申请日：2003-04-01

申请人： Martha Collins ,  Lisa Deis ,  John Kirner ,  James Mac Dougall ,  Brian Peterson ,  Scott Weigel

发明人： Martha Collins ,  Lisa Deis ,  John Kirner ,  James Mac Dougall ,  Brian Peterson ,  Scott Weigel

IPC分类号： H01L21/768 ,  C23C18/12 ,  C23C18/14 ,  H01B3/46 ,  H01L21/316 ,  H01L23/522 ,  B32B9/04 ,  B05D3/02

CPC分类号： C23C18/14 ,  C23C18/1208 ,  C23C18/127 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31663

摘要： Low dielectric materials and films comprising same have been identified for improved performance when in integrated circuits as well as a method and a mixture for making same. In one embodiment of the invention, there is provided a mixture for forming a porous, low-k dielectric material comprising: at least one silica source having an at least one silicon atom and an organic group comprising carbon and hydrogen atoms attached thereto wherein at least one hydrogen atom within the organic group is removable upon exposure to an ionizing radiation source; and at least one porogen wherein the ratio of the weight of at least one porogen to the weight of the at least one porogen and SiO2 provided by the at least one silica source is 0.4 or greater. The mechanical and other properties of the porous, silica-based material are improved via exposure to the ionizing radiation source.

摘要翻译： 已经鉴定了低介电材料和包含它们的薄膜，以便在集成电路中提高性能以及用于制造其的方法和混合物。 在本发明的一个实施方案中，提供了一种用于形成多孔低k电介质材料的混合物，其包括：至少一个二氧化硅源，其具有至少一个硅原子和包含与其连接的碳原子和氢原子的有机基团，其中至少一个 有机基团中的一个氢原子在暴露于电离辐射源时是可去除的; 和至少一种造孔剂，其中由至少一种二氧化硅源提供的至少一种致孔剂的重量与至少一种致孔剂和SiO 2的重量的比例为0.4或更大。 通过暴露于电离辐射源，改善了多孔二氧化硅基材料的机械性能和其它性能。

公开(公告)号：US20060249818A1

公开(公告)日：2006-11-09

申请号：US11484075

申请日：2006-07-11

申请人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01B1/12 ,  H01B1/00

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

公开(公告)号：US20060249713A1

公开(公告)日：2006-11-09

申请号：US11484049

申请日：2006-07-11

申请人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Thomas Deis ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： Brian Peterson ,  John Kirner ,  Scott Weigel ,  James MacDougall ,  Thomas Deis ,  Lisa Deis ,  Thomas Braymer ,  Keith Campbell ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01B1/12

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

公开(公告)号：US20050196974A1

公开(公告)日：2005-09-08

申请号：US11060371

申请日：2005-02-18

申请人： Scott Weigel ,  Shrikant Khot ,  James MacDougall ,  Thomas Braymer ,  John Kirner ,  Brian Peterson

发明人： Scott Weigel ,  Shrikant Khot ,  James MacDougall ,  Thomas Braymer ,  John Kirner ,  Brian Peterson

IPC分类号： C08L83/04 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  C09D201/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/31695

摘要： Silica-based materials and films having a dielectric constant of 3.7 or below and compositions and methods for making and using same are disclosed herein. In one aspect, there is provided a composition for preparing a silica-based material comprising an at least one silica source, a solvent, an at least one porogen, optionally a catalyst, and optionally a flow additive wherein the solvent boils at a temperature ranging from 90° C. to 170° C. and is selected from the group of compounds represented by the following formulas: HO—CHR8—CHR9—CH2—CHR10R11 where R8, R9, R10 and R11 can independently be an alkyl group ranging from 1 to 4 carbon atoms or a hydrogen atom; and R12—CO—R13 where R12 is a hydrocarbon group having from 3 to 6 carbon atoms; R13 is a hydrocarbon group having from 1 to 3 carbon atoms; and mixtures thereof.

摘要翻译： 本文公开了具有3.7或更低介电常数的二氧化硅基材料和膜及其制备和使用方法。 在一个方面，提供了一种用于制备二氧化硅基材料的组合物，其包含至少一种二氧化硅源，溶剂，至少一种致孔剂，任选的催化剂和任选的流动添加剂，其中溶剂在温度范围内沸腾 从90℃至170℃，并且选自由下式表示的化合物组：HO-CHR 8 -CHR 9 -CH 2 其中R 8，R 9，R 10，R 10，R 10，R 10， R 11和R 11可以独立地为1至4个碳原子的烷基或氢原子; 和R 12 -CO-R 13其中R 12是具有3至6个碳原子的烃基; R 13是具有1至3个碳原子的烃基; 及其混合物。

公开(公告)号：US20050116346A1

公开(公告)日：2005-06-02

申请号：US10964499

申请日：2004-10-13

申请人： John Kirner ,  James MacDougall ,  Brian Peterson ,  Scott Weigel ,  Thomas Deis ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

发明人： John Kirner ,  James MacDougall ,  Brian Peterson ,  Scott Weigel ,  Thomas Deis ,  Martin Devenney ,  C. Ramberg ,  Konstantinos Chondroudis ,  Keith Cendak

IPC分类号： H01L21/768 ,  C01B33/16 ,  H01B3/12 ,  H01B3/46 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  B32B9/04

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/249979

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (κ) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 这些材料的特征在于具有约3.7或更小的介电常数（kappa）的介电常数; 来自材料的介电常数的部分归一化的壁弹性模量（E 0）为约15GPa或更大; 金属杂质含量为约500ppm以下。 还公开了低介电常数材料，其介电常数小于约1.95，并且部分源于材料的介电常数导出的归一化的壁弹性模量（E 0）大于约26 GPa。

公开(公告)号：US20050196535A1

公开(公告)日：2005-09-08

申请号：US11060466

申请日：2005-02-18

申请人： Scott Weigel ,  Shrikant Khot ,  Rosaleen Morris-Oskanian ,  Steven Mayorga ,  James Mac Dougall ,  Lee Senecal

发明人： Scott Weigel ,  Shrikant Khot ,  Rosaleen Morris-Oskanian ,  Steven Mayorga ,  James Mac Dougall ,  Lee Senecal

IPC分类号： H01L21/31 ,  B05D3/00 ,  H01L21/306 ,  H01L21/3213

CPC分类号： H01L21/3121 ,  C11D7/266 ,  C11D11/0047 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31695

摘要： A method for the removal of residues comprising silicon from at least a portion of the top and back of a substrate and/or deposition apparatus is disclosed herein. In one aspect, there is provided a method for removing residues comprising: treating the coated substrate and/or deposition apparatus with a removal solvent.

摘要翻译： 本文公开了从衬底和/或沉积设备的顶部和背部的至少一部分去除包含硅的残余物的方法。 一方面，提供一种除去残留物的方法，包括：用去除溶剂处理涂覆的基底和/或沉积装置。

公开(公告)号：US20060183055A1

公开(公告)日：2006-08-17

申请号：US11350322

申请日：2006-02-08

申请人： Mark O'Neill ,  Scott Weigel ,  David Rennie ,  David Roberts ,  Eugene Karwacki ,  James Mac Dougall

发明人： Mark O'Neill ,  Scott Weigel ,  David Rennie ,  David Roberts ,  Eugene Karwacki ,  James Mac Dougall

IPC分类号： G03C5/00 ,  C23C16/24

CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76808 ,  H01L21/7682 ,  H01L2221/1047

摘要： An improved method of forming a feature in a semiconductor substrate is described. The method comprises the steps of forming a porous dielectric layer on a substrate; removing a first portion of the porous dielectric layer to form a first etched region; filling the first etched region with a porous sacrificial light absorbing material having dry etch properties similar to those of the porous dielectric layer; removing a portion of the porous sacrificial light absorbing material and a second portion of the porous dielectric layer to form a second etched region; and removing the remaining portions of the porous sacrificial light absorbing material by employing a process, wherein the porous sacrificial light absorbing material has an etch rate greater than that of the porous dielectric layer in the process.

摘要翻译： 描述了在半导体衬底中形成特征的改进方法。 该方法包括以下步骤：在基底上形成多孔介电层; 去除多孔介电层的第一部分以形成第一蚀刻区域; 用具有与多孔介电层类似的干蚀刻性质的多孔牺牲光吸收材料填充第一蚀刻区域; 去除所述多孔牺牲光吸收材料的一部分和所述多孔介电层的第二部分以形成第二蚀刻区域; 以及通过采用一种方法去除多孔牺牲光吸收材料的剩余部分，其中多孔牺牲光吸收材料的蚀刻速率大于该工艺中的多孔介电层的蚀刻速率。

公开(公告)号：US20070299176A1

公开(公告)日：2007-12-27

申请号：US11341334

申请日：2006-01-27

申请人： Thomas Markley ,  Scott Weigel ,  Christine Kretz ,  Thomas Braymer ,  James Mac Dougall ,  Cecilia Petit

发明人： Thomas Markley ,  Scott Weigel ,  Christine Kretz ,  Thomas Braymer ,  James Mac Dougall ,  Cecilia Petit

IPC分类号： B05D3/02 ,  B05D3/06 ,  B60C1/00 ,  C08L83/04

CPC分类号： C09D183/04 ,  G03F7/0755 ,  G03F7/0757 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31695

摘要： A photodefinable, organosilicate material having a dielectric constant (κ) of 3.5 or below and a method for making and using same, for example, in an electronic device, is described herein. In one aspect, there is provided a composition for preparing a photodefinable material comprising: a silica source capable of being sol-gel processed and having a molar ratio of carbon to silicon within the silica source contained therein of at least 0.5 or greater; a photoactive compound; optionally a solvent; and water provided the composition contains 0.1% by weight or less of an added acid where the acid has a molecular weight of 500 or less.

摘要翻译： 本文描述了具有3.5或更低介电常数（κ）的可光缩合的有机硅酸盐材料及其制造和使用方法，例如在电子设备中。 一方面，提供了一种用于制备可光限定材料的组合物，其包含：能够进行溶胶 - 凝胶加工并且其中含有的二氧化硅源中的碳与硅的摩尔比至少为0.5以上的二氧化硅源; 光敏化合物; 任选的溶剂; 和水，只要该组合物含有0.1重量％以下的酸，其中酸的分子量为500以下。

公开(公告)号：US20070196773A1

公开(公告)日：2007-08-23

申请号：US11706243

申请日：2007-02-15

申请人： Scott Weigel ,  Peng Zang ,  Thomas Braymer ,  Gene Parris

发明人： Scott Weigel ,  Peng Zang ,  Thomas Braymer ,  Gene Parris

IPC分类号： G03C1/00

CPC分类号： G03F7/0752 ,  G03F7/11 ,  G03F7/2041

摘要： The present invention provides a top coat composition comprising a silicon-containing polymer prepared by hydrolysis and condensation of at least one silica source; a solvent; optionally a catalyst; and optionally water, wherein the silicon-containing polymer depolymerizes upon exposure to an aqueous base-containing solution.

摘要翻译： 本发明提供一种面漆组合物，其包含通过至少一种二氧化硅源的水解和缩合制备的含硅聚合物; 溶剂; 任选的催化剂; 和任选的水，其中所述含硅聚合物在暴露于含水碱溶液时解聚。

公开(公告)号：US20080012074A1

公开(公告)日：2008-01-17

申请号：US11773570

申请日：2007-07-05

申请人： Thomas Braymer ,  Christine Kretz ,  Thomas Markley ,  Scott Weigel

发明人： Thomas Braymer ,  Christine Kretz ,  Thomas Markley ,  Scott Weigel

IPC分类号： H01L27/12 ,  C09D183/06

CPC分类号： H01L29/78603 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/316 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/4908 ,  H01L51/0096 ,  H01L51/0525

摘要： Traditionally, sol-gel silicates have been reported as being high temperature processable at 400 C to give reasonably dense films that showed good leakage current densities (

摘要翻译： 传统上，已经报道了溶胶 - 凝胶硅酸盐在400℃下是高温可加工的，以产生相当致密的膜，其表现出良好的漏电流密度（<5×10 -8 -8 A / cm 2 / >）。 最近我们已经发现，我们能够从135℃至250℃固化的溶胶 - 凝胶硅酸盐前体的特定组合制备薄膜，并提供良好的漏电流密度值（9×10 -9 -9） A / cm 2至1×10 -10 A / cm 2），尽管处理温度降低。 这些是在较低温度下固化的硅酸盐的一些例子，其中泄漏电流密度足够低以用作柔性或轻质薄膜晶体管的低温处理或可加工或可印刷的栅极电介质。 这些制剂也可用于薄膜晶体管和其它电子器件的不锈钢箔的平面化。