Abstract:
A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria. Further, the plurality of calibration sites that are provided on the single calibration pad may be pre-evaluated so as to initially screen out unacceptable calibration sites prior to use. The techniques provided may be utilized in calibration processes which utilize a single calibration sample or processes which require a plurality of calibration samples.
Abstract:
A technique is provided for generating and subsequently monitoring the controlled environment(s) within an optical metrology instrument in such a manner as to minimize absorbing species within the light path of the metrology instrument and to minimize the build-up of contaminants on the surfaces of optical elements that may result in performance degradation. Both evacuation and backfill techniques may be utilized together along with a monitoring technique to determine if the environmental is suitable for measurements or if the environment should be regenerated. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.
Abstract:
The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.
Abstract:
The present invention provides a method of presenting a wafer to a metrology device for measuring surface characteristics of the wafer. In accordance with one aspect of the present invention, the metrology device is physically integrated with the wafer processing machine between two wafer processing stations. The metrology device measures the uniformity and or thickness of the wafer. In the preferred embodiment, the measuring device is a single wavelength multi-angle reflectometry device. The device comprises a light source provided from multiple emission points. In the preferred embodiment, the light source comprises a laser and the emission point comprise fiber optic cabling. In accordance with yet another aspect of the present invention, a wafer location means is provided to track the position of the wafer passing over the wafer measurement device. Preferably, the tracking device comprises a light curtain comprising a light beam which detects when the wafer is entering the measuring device and suitably enables the tracking of the location of the wafer.
Abstract:
A technique is provided for generating and subsequently monitoring the controlled environment(s) within an optical metrology instrument in such a manner as to minimize absorbing species within the light path of the metrology instrument and to minimize the build-up of contaminants on the surfaces of optical elements that may result in performance degradation. Both evacuation and backfill techniques may be utilized together along with a monitoring technique to determine if the environmental is suitable for measurements or if the environment should be regenerated. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.
Abstract:
A technique is provided monitoring and removing contaminants from the surface of a sample that is being measured with an optical metrology tool. The monitoring and removing contaminants from the surface of a sample may occur prior to recording an optical response from said sample in order to ensure that accurate results are obtained. Contaminant layers may be quantified so that other measurements may be accurately obtained without requiring the removal of the contaminant layer. The contaminant layers may be removed through the exposure to optical radiation. Alternatively, properties of non-contaminant layers may be characterized by analyzing changes that occur in such layers by exposure to optical radiation. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.
Abstract:
The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.
Abstract:
A plectrum for stringed musical instruments includes a plurality of resilient brush bristles or fibers arranged in a brush-like manner and mounted on the tip of the plectrum. The brush bristles cause multiple, low intensity impacts upon the strings of the instrument with each stroke of the brush plectrum, creating a different and unique harmonic quality than conventional plectrums or those having multiple pick arrays.
Abstract:
A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria. Further, the plurality of calibration sites that are provided on the single calibration pad may be pre-evaluated so as to initially screen out unacceptable calibration sites prior to use. The techniques provided may be utilized in calibration processes which utilize a single calibration sample or processes which require a plurality of calibration samples.
Abstract:
A technique is provided for monitoring and controlling surface contaminants on optical elements contained within the optical path (or sub-path) of an optical metrology instrument. The technique may be utilized in one embodiment in such a manner as to not require that additional components and/or instrumentation be coupled to, or integrated into, existing metrology equipment. Surface contaminants on optical elements within an optical metrology instrument are monitored so that cleaning procedures can be performed as deemed necessary. The cleaning procedures may include the use of exposing the optical elements to optical radiation. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.