Automated calibration methodology for VUV metrology system
    1.
    发明授权
    Automated calibration methodology for VUV metrology system 有权
    VUV测量系统的自动校准方法

    公开(公告)号:US08153987B2

    公开(公告)日:2012-04-10

    申请号:US12454837

    申请日:2009-05-22

    CPC classification number: G01N21/278 G01N2021/335

    Abstract: A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria. Further, the plurality of calibration sites that are provided on the single calibration pad may be pre-evaluated so as to initially screen out unacceptable calibration sites prior to use. The techniques provided may be utilized in calibration processes which utilize a single calibration sample or processes which require a plurality of calibration samples.

    Abstract translation: 提供具有多个校准位置的校准垫。 可以使用特定的校准位点,直到该特定位点被确定为不可接受以进一步使用,例如来自污染,在这种情况下,校准过程然后可以移动到在校准垫上使用不同的校准位点 s)。 可以使用各种技术来提供站点不再可接受使用的确定。 因此,随着时间的推移,运动可能会在现场到现场进行,以用于校准过程。 可以建立各种标准来确定何时移动到另一个站点。 虽然将站点指定为“不良”可以基于测量的反射率数据,但是也可以使用其他标准。 例如,站点暴露于光线的次数可能是指定站点不佳的标准。 或者,站点的累积曝光可以是标准。 此外,可以预先评估设置在单个校准垫上的多个校准位置,以便在使用之前初始地屏蔽不可接受的校准位置。 提供的技术可以用于利用单个校准样品或需要多个校准样品的过程的校准过程。

    Contamination monitoring and control techniques for use with an optical metrology instrument
    2.
    发明申请
    Contamination monitoring and control techniques for use with an optical metrology instrument 有权
    用于光学计量仪器的污染监测和控制技术

    公开(公告)号:US20080073560A1

    公开(公告)日:2008-03-27

    申请号:US11600414

    申请日:2006-11-16

    Abstract: A technique is provided for generating and subsequently monitoring the controlled environment(s) within an optical metrology instrument in such a manner as to minimize absorbing species within the light path of the metrology instrument and to minimize the build-up of contaminants on the surfaces of optical elements that may result in performance degradation. Both evacuation and backfill techniques may be utilized together along with a monitoring technique to determine if the environmental is suitable for measurements or if the environment should be regenerated. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.

    Abstract translation: 提供了一种技术,用于产生和随后监测光学测量仪器内的受控环境,使得最小化测量仪器的光路内的吸收物质的最小化,并使污染物在表面上的积聚最小化 可能导致性能下降的光学元件。 撤离和回填技术都可以与监测技术一起使用,以确定环境是否适合于测量或者是否应该再生环境。 光学测量仪器可以是在包括真空紫外(VUV)波长的波长下操作的仪器。

    Multiprobe detection system for chemical-mechanical planarization tool
    3.
    发明授权
    Multiprobe detection system for chemical-mechanical planarization tool 有权
    化学机械平面化工具多点探测系统

    公开(公告)号:US06960115B2

    公开(公告)日:2005-11-01

    申请号:US10646011

    申请日:2003-08-22

    Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

    Abstract translation: 本发明是用于平坦化晶片的方法和装置。 以期望的空间密度跨越晶片的表面进行离散测量。 可以使用闪光灯产生测量值,以用分析反射光的光谱仪将光信号从晶片的表面反射出来。 可以在不同位置使用多个探针,以缩短在晶片的整个正面进行测量所需的时间,并允许多个区域基本上同时采样。 控制系统接收测量及其对应位置。 然后,控制系统能够分析寻找需要材料去除速率增加或减少的晶片正面上的区域或频带的数据。 控制系统然后能够调整一个或多个平坦化参数以改善当前晶片或将来晶片的工艺。

    Inline metrology device
    4.
    发明授权
    Inline metrology device 有权
    内联计量装置

    公开(公告)号:US06447370B1

    公开(公告)日:2002-09-10

    申请号:US09836789

    申请日:2001-04-17

    Applicant: Matthew Weldon

    Inventor: Matthew Weldon

    CPC classification number: H01L21/67161 H01L21/67219 H01L21/67253

    Abstract: The present invention provides a method of presenting a wafer to a metrology device for measuring surface characteristics of the wafer. In accordance with one aspect of the present invention, the metrology device is physically integrated with the wafer processing machine between two wafer processing stations. The metrology device measures the uniformity and or thickness of the wafer. In the preferred embodiment, the measuring device is a single wavelength multi-angle reflectometry device. The device comprises a light source provided from multiple emission points. In the preferred embodiment, the light source comprises a laser and the emission point comprise fiber optic cabling. In accordance with yet another aspect of the present invention, a wafer location means is provided to track the position of the wafer passing over the wafer measurement device. Preferably, the tracking device comprises a light curtain comprising a light beam which detects when the wafer is entering the measuring device and suitably enables the tracking of the location of the wafer.

    Abstract translation: 本发明提供一种向测量装置呈现晶片以测量晶片的表面特性的方法。 根据本发明的一个方面,计量装置在两个晶片处理站之间与晶片处理机物理地集成。 测量装置测量晶片的均匀性或厚度。 在优选实施例中,测量装置是单波长多角度反射测量装置。 该装置包括从多个发射点提供的光源。 在优选实施例中,光源包括激光器,并且发射点包括光纤布线。根据本发明的另一方面,提供晶片定位装置以跟踪通过晶片测量装置的晶片的位置 。 优选地,跟踪装置包括光幕,其包括光束,该光束检测晶片何时进入测量装置,并且适当地使得能够跟踪晶片的位置。

    Contamination monitoring and control techniques for use with an optical metrology instrument
    5.
    发明授权
    Contamination monitoring and control techniques for use with an optical metrology instrument 有权
    用于光学计量仪器的污染监测和控制技术

    公开(公告)号:US07622310B2

    公开(公告)日:2009-11-24

    申请号:US11600414

    申请日:2006-11-16

    Abstract: A technique is provided for generating and subsequently monitoring the controlled environment(s) within an optical metrology instrument in such a manner as to minimize absorbing species within the light path of the metrology instrument and to minimize the build-up of contaminants on the surfaces of optical elements that may result in performance degradation. Both evacuation and backfill techniques may be utilized together along with a monitoring technique to determine if the environmental is suitable for measurements or if the environment should be regenerated. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.

    Abstract translation: 提供了一种技术,用于产生和随后监测光学测量仪器内的受控环境,使得最小化测量仪器的光路内的吸收物质的最小化,并使污染物在表面上的积聚最小化 可能导致性能下降的光学元件。 撤离和回填技术都可以与监测技术一起使用,以确定环境是否适合于测量或者是否应该再生环境。 光学测量仪器可以是在包括真空紫外(VUV)波长的波长下操作的仪器。

    Contamination monitoring and control techniques for use with an optical metrology instrument
    6.
    发明授权
    Contamination monitoring and control techniques for use with an optical metrology instrument 有权
    用于光学计量仪器的污染监测和控制技术

    公开(公告)号:US07342235B1

    公开(公告)日:2008-03-11

    申请号:US11600413

    申请日:2006-11-16

    Abstract: A technique is provided monitoring and removing contaminants from the surface of a sample that is being measured with an optical metrology tool. The monitoring and removing contaminants from the surface of a sample may occur prior to recording an optical response from said sample in order to ensure that accurate results are obtained. Contaminant layers may be quantified so that other measurements may be accurately obtained without requiring the removal of the contaminant layer. The contaminant layers may be removed through the exposure to optical radiation. Alternatively, properties of non-contaminant layers may be characterized by analyzing changes that occur in such layers by exposure to optical radiation. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.

    Abstract translation: 提供了一种技术来监测和去除使用光学测量工具测量的样品表面的污染物。 在记录来自所述样品的光学响应之前,可能发生来自样品表面的污染物的监测和去除,以确保获得准确的结果。 可以量化污染物层,使得可以准确地获得其它测量值,而不需要去除污染物层。 可以通过暴露于光辐射来去除污染物层。 或者,非污染物层的性质可以通过分析通过暴露于光辐射而在这些层中发生的变化来表征。 光学测量仪器可以是在包括真空紫外(VUV)波长的波长下操作的仪器。

    Multiprobe detection system for chemical-mechanical planarization tool
    7.
    发明授权
    Multiprobe detection system for chemical-mechanical planarization tool 有权
    化学机械平面化工具多点探测系统

    公开(公告)号:US06805613B1

    公开(公告)日:2004-10-19

    申请号:US09690521

    申请日:2000-10-17

    Abstract: The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

    Abstract translation: 本发明是用于平坦化晶片的方法和装置。 以期望的空间密度跨越晶片的表面进行离散测量。 可以使用闪光灯产生测量值,以用分析反射光的光谱仪将光信号从晶片的表面反射出来。 可以在不同位置使用多个探针,以缩短在晶片的整个正面进行测量所需的时间,并允许多个区域基本上同时采样。 控制系统接收测量及其对应位置。 然后,控制系统能够分析寻找需要材料去除速率增加或减少的晶片正面上的区域或频带的数据。 控制系统然后能够调整一个或多个平坦化参数以改善当前晶片或将来晶片的工艺。

    Brush plectrum for stringed instruments
    8.
    发明授权
    Brush plectrum for stringed instruments 失效
    弦乐器的画笔

    公开(公告)号:US5942704A

    公开(公告)日:1999-08-24

    申请号:US97717

    申请日:1998-06-16

    Applicant: Matthew Weldon

    Inventor: Matthew Weldon

    CPC classification number: G10D3/163

    Abstract: A plectrum for stringed musical instruments includes a plurality of resilient brush bristles or fibers arranged in a brush-like manner and mounted on the tip of the plectrum. The brush bristles cause multiple, low intensity impacts upon the strings of the instrument with each stroke of the brush plectrum, creating a different and unique harmonic quality than conventional plectrums or those having multiple pick arrays.

    Abstract translation: 用于弦乐器的琴弦包括以刷状方式布置并安装在琴尖上的多个弹性刷刷毛或纤维。 刷毛刷在电刷的每个行程上对仪器的串产生多次,低强度的冲击,产生与常规电极或具有多个拾取阵列的谐波质量不同且独特的谐波质量。

    Automated calibration methodology for VUV metrology system
    9.
    发明申请
    Automated calibration methodology for VUV metrology system 有权
    VUV测量系统的自动校准方法

    公开(公告)号:US20100294922A1

    公开(公告)日:2010-11-25

    申请号:US12454837

    申请日:2009-05-22

    CPC classification number: G01N21/278 G01N2021/335

    Abstract: A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria. Further, the plurality of calibration sites that are provided on the single calibration pad may be pre-evaluated so as to initially screen out unacceptable calibration sites prior to use. The techniques provided may be utilized in calibration processes which utilize a single calibration sample or processes which require a plurality of calibration samples.

    Abstract translation: 提供具有多个校准位置的校准垫。 可以使用特定的校准位点,直到该特定位点被确定为不可接受以进一步使用,例如来自污染,在这种情况下,校准过程然后可以移动到在校准垫上使用不同的校准位点 s)。 可以使用各种技术来提供站点不再可接受使用的确定。 因此,随着时间的推移,运动可能会在现场到现场进行,以用于校准过程。 可以建立各种标准来确定何时移动到另一个站点。 虽然将站点指定为“不良”可以基于测量的反射率数据,但是也可以使用其他标准。 例如,站点暴露于光线的次数可能是指定站点不佳的标准。 或者,站点的累积曝光可以是标准。 此外,可以预先评估设置在单个校准垫上的多个校准位置,以便在使用之前最初屏蔽不可接受的校准位置。 提供的技术可以用于利用单个校准样品或需要多个校准样品的过程的校准过程。

    Contamination monitoring and control techniques for use with an optical metrology instrument
    10.
    发明授权
    Contamination monitoring and control techniques for use with an optical metrology instrument 有权
    用于光学计量仪器的污染监测和控制技术

    公开(公告)号:US07663747B2

    公开(公告)日:2010-02-16

    申请号:US11600477

    申请日:2006-11-16

    CPC classification number: G01N21/94 G01N21/33 G01N2021/335

    Abstract: A technique is provided for monitoring and controlling surface contaminants on optical elements contained within the optical path (or sub-path) of an optical metrology instrument. The technique may be utilized in one embodiment in such a manner as to not require that additional components and/or instrumentation be coupled to, or integrated into, existing metrology equipment. Surface contaminants on optical elements within an optical metrology instrument are monitored so that cleaning procedures can be performed as deemed necessary. The cleaning procedures may include the use of exposing the optical elements to optical radiation. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.

    Abstract translation: 提供了一种用于监测和控制包含在光学计量仪器的光路(或子路径)内的光学元件上的表面污染物的技术。 该技术可以在一个实施例中以不要求额外的部件和/或仪器耦合到或集成到现有计量设备中的方式来使用。 监视光学计量仪器内的光学元件上的表面污染物,以便可以根据需要执行清洁程序。 清洁程序可以包括将光学元件暴露于光学辐射的使用。 光学测量仪器可以是在包括真空紫外(VUV)波长的波长下操作的仪器。

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