公开(公告)号：US06960115B2

公开(公告)日：2005-11-01

申请号：US10646011

申请日：2003-08-22

申请人： Matthew Weldon ,  Thomas Laursen ,  Malcolm Grief ,  Paul Holzapfel ,  Mark A. Meloni ,  Robert Eaton

发明人： Matthew Weldon ,  Thomas Laursen ,  Malcolm Grief ,  Paul Holzapfel ,  Mark A. Meloni ,  Robert Eaton

IPC分类号： B24B37/013 ,  B24B37/10 ,  B24B37/30 ,  B24B49/10 ,  B24B49/12 ,  B24B49/14 ,  H01L21/00

CPC分类号： B24B37/105 ,  B24B37/013 ,  B24B37/30 ,  B24B49/10 ,  B24B49/12 ,  B24B49/14 ,  H01L21/67253

摘要： The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

摘要翻译： 本发明是用于平坦化晶片的方法和装置。 以期望的空间密度跨越晶片的表面进行离散测量。 可以使用闪光灯产生测量值，以用分析反射光的光谱仪将光信号从晶片的表面反射出来。 可以在不同位置使用多个探针，以缩短在晶片的整个正面进行测量所需的时间，并允许多个区域基本上同时采样。 控制系统接收测量及其对应位置。 然后，控制系统能够分析寻找需要材料去除速率增加或减少的晶片正面上的区域或频带的数据。 控制系统然后能够调整一个或多个平坦化参数以改善当前晶片或将来晶片的工艺。

公开(公告)号：US06805613B1

公开(公告)日：2004-10-19

申请号：US09690521

申请日：2000-10-17

申请人： Matthew Weldon ,  Thomas Laursen ,  Malcolm Grief ,  Paul Holzapfel ,  Mark A. Meloni ,  Robert Eaton

发明人： Matthew Weldon ,  Thomas Laursen ,  Malcolm Grief ,  Paul Holzapfel ,  Mark A. Meloni ,  Robert Eaton

IPC分类号： B24B4912

CPC分类号： B24B37/105 ,  B24B37/013 ,  B24B37/30 ,  B24B49/10 ,  B24B49/12 ,  B24B49/14 ,  H01L21/67253

摘要： The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

摘要翻译： 本发明是用于平坦化晶片的方法和装置。 以期望的空间密度跨越晶片的表面进行离散测量。 可以使用闪光灯产生测量值，以用分析反射光的光谱仪将光信号从晶片的表面反射出来。 可以在不同位置使用多个探针，以缩短在晶片的整个正面进行测量所需的时间，并允许多个区域基本上同时采样。 控制系统接收测量及其对应位置。 然后，控制系统能够分析寻找需要材料去除速率增加或减少的晶片正面上的区域或频带的数据。 控制系统然后能够调整一个或多个平坦化参数以改善当前晶片或将来晶片的工艺。

公开(公告)号：US07589843B2

公开(公告)日：2009-09-15

申请号：US11528732

申请日：2006-09-27

申请人： Arun Ananth Aiyer ,  Mark A. Meloni

发明人： Arun Ananth Aiyer ,  Mark A. Meloni

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G01B11/0675 ,  G01B9/02003 ,  G01B9/02022 ,  G01B9/02057 ,  G01B2290/60 ,  G01B2290/70

摘要： A self referencing heterodyne reflectometer is disclosed which rapidly alternates between a heterodyne reflectometry (HR) mode, in which an HR beam comprised of s- and p-polarized beam components at split angular frequencies of ω and ω+Δω is employed, and a self referencing (SR) mode, in which an SR beam comprised of p-polarized beam components at split angular frequencies of ω and ω+Δω is employed. Alternatively, in SR operating mode the SR beam is replaced by a p-polarized amplitude modulated (AM) beam, operating at two modulated amplitudes of α and α+Δα at a single frequency, ω′. When the two measurements are made in rapid succession, using an optical chopper switcher, temperature induced noise in the detector is be assumed to be equivalent. Film phase shift information is derived from the measured phase shift δRef/film, generated from the HR beam, and the reference phase shift δRef/Sub, generated from the SR/AM beam, which are used for calculating film thickness.

摘要翻译： 公开了一种自参考外差反射计，其在外差反射测量（HR）模式之间迅速交替，其中采用由ω和ω+ Deltaomega的分裂角频率组成的s偏振光束分量和p偏振光束分量的HR光束， 参考（SR）模式，其中采用由ω和ω+ Deltaomega的分裂角频率组成的p偏振光束分量的SR光束。 或者，在SR操作模式中，SR波束被p极化振幅调制（AM）波束替代，在单个频率ωω处以α和α+Δα的两个调制幅度操作。 当快速连续进行两次测量时，使用光斩波器切换器，假设检测器中的温度感应噪声相当。 薄膜相移信息是从HR波长产生的测得的相移ΔRef/薄膜和从用于计算薄膜厚度的SR / AM光束产生的参考相移ΔRef/ Sub导出的。

公开(公告)号：US07339682B2

公开(公告)日：2008-03-04

申请号：US11066933

申请日：2005-02-25

申请人： Arun Ananth Aiyer ,  Mark A. Meloni ,  Kenneth C. Harvey ,  Andrew Weeks Kueny

发明人： Arun Ananth Aiyer ,  Mark A. Meloni ,  Kenneth C. Harvey ,  Andrew Weeks Kueny

IPC分类号： G01B9/02

CPC分类号： G01B11/0641

摘要： The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results. A grating interferometer may be included with the heterodyne reflectometer system with a grating, which diffracts the reflected beam into zeroth- and first-order bands, which are then detected by separate detectors. A detector receives the zeroth-order beam and generates another measurement signal. Another detector receives the first-order beam and generates a grating signal. The measurement signal from the grating and reference signal may be analyzed by a phase detector for phase shift, which is related to the thickness of the film. Conversely, either measurement signal may be analyzed with the grating signal by a phase detector for detecting a grating phase shift. The refractive index for the film may be calculated from grating phase shift and the heterodyne phase shift. The updated refractive index is then used for calculating thickness.

摘要翻译： 本发明涉及一种外差反射计系统和方法，用于从外差光信号中获得高精度的相移信息，从而可以计算出非常精确的胶片深度。 由分裂的光学频率彼此正交的两个线性偏振分量组成的线性偏振光指向一个薄膜，导致光学偏振分量之一由于膜中光路的增加而落后于另一个 为该组件。 一对检测器接收从膜层反射的光束并产生测量信号，并且在入射到膜层之前分别产生参考信号。 测量信号和参考信号由相位检测器分析。 然后将检测到的相移馈送到用于膜厚度结果的厚度计算器中。 光栅干涉仪可以与带有光栅的外差反射计系统一起包含，该光栅将反射光束衍射成零级和一级带，然后由单独的检测器检测。 检测器接收零级光束并产生另一测量信号。 另一个检测器接收一阶光束并产生光栅信号。 来自光栅和参考信号的测量信号可以通过用于相移的相位检测器进行分析，这与膜的厚度有关。 相反，可以通过用于检测光栅相移的相位检测器用光栅信号来分析测量信号。 膜的折射率可以通过光栅相移和外差相移来计算。 然后更新的折射率用于计算厚度。

公开(公告)号：US06991514B1

公开(公告)日：2006-01-31

申请号：US10371068

申请日：2003-02-21

申请人： Mark A. Meloni ,  Andrew W. Kueny

发明人： Mark A. Meloni ,  Andrew W. Kueny

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B49/12

摘要： For use with a chemical mechanical polishing apparatus for polishing a semiconductor wafer having a platen, a polishing pad and a wafer carrier, an optical closed-loop control system. In one embodiment, the system includes a plurality of optical probes impacting a corresponding probe window and rigidly mountable through the platen. The system also includes a flash lamp configured to provide light to each of the plurality of optical probes and minimize an exposure time of the light onto the semiconductor wafer, a spectrograph configured to spatially image light received by each of the plurality of optical probes to a common charge-coupled device and produce real-time spectral reflectometry data therefrom. The system further includes a control subsystem configured to analyze the real-time spectral reflectometry data and determine at least one wafer state parameter therefrom, and cause the polishing to be adjusted based upon the at least one wafer state parameter.

摘要翻译： 用于抛光具有压板，抛光垫和晶片载体的半导体晶片的化学机械抛光装置，光学闭环控制系统。 在一个实施例中，该系统包括多个光学探针，其冲击对应的探针窗口并且能够通过压板刚性地安装。 该系统还包括闪光灯，其被配置为向多个光学探针中的每一个提供光，并将光的曝光时间最小化到半导体晶片上，配置为将由多个光学探针中的每一个接收的光空间地映像到 公共电荷耦合器件，并从其产生实时光谱反射计数据。 该系统还包括配置成分析实时光谱反射测量数据并从其确定至少一个晶片状态参数的控制子系统，并且使得基于至少一个晶片状态参数来调整抛光。

公开(公告)号：US06264532B1

公开(公告)日：2001-07-24

申请号：US09536580

申请日：2000-03-28

申请人： Mark A. Meloni

发明人： Mark A. Meloni

IPC分类号： B24B4900

CPC分类号： B24B37/0053 ,  B24B37/013 ,  B24B49/10

摘要： An apparatus for use with a chemical mechanical planarization (CMP) system includes an ultrasonic source that is disposed proximate a workpiece carrier. The ultrasonic source generates an ultrasonic signal toward an area of a polishing pad or a workpiece during the polishing of the workpiece held by the carrier. An ultrasonic detector is configured to receive a reflected ultrasonic signal for processing in order to determine the presence of extraneous material at the area of the polishing pad.

摘要翻译： 用于化学机械平面化（CMP）系统的装置包括邻近工件载体设置的超声波源。 在由载体保持的工件的抛光期间，超声波源产生朝向抛光垫或工件的区域的超声波信号。 超声波检测器被配置为接收反射的超声波信号进行处理，以便确定抛光垫区域处的外来材料的存在。

公开(公告)号：US06685537B1

公开(公告)日：2004-02-03

申请号：US09587593

申请日：2000-06-05

申请人： Clinton O. Fruitman ,  Mark A. Meloni ,  Periya Gopalan ,  Andrew Yednak, III

发明人： Clinton O. Fruitman ,  Mark A. Meloni ,  Periya Gopalan ,  Andrew Yednak, III

IPC分类号： B24B4900

CPC分类号： B24B37/205 ,  B24D11/008

摘要： The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

摘要翻译： 本发明是一种用于在晶片的前表面的平坦化处理期间用于制造抛光垫中的窗口的装置和方法。 在需要窗户的位置处，在抛光垫中产生孔。 可以将第一释放膜压在抛光垫的工作表面上，从而覆盖孔的一端。 合适的机械，化学和光学性能的窗口材料铸造在孔中。 第二释放膜也可以压靠在覆盖孔的另一端的抛光垫的底表面上。 窗材料优选用光固化以快速形成并将窗口结合到孔中。 可以移除离型膜，留下抛光垫中的浇铸窗。

公开(公告)号：US06466642B1

公开(公告)日：2002-10-15

申请号：US09586934

申请日：2000-06-02

申请人： Mark A. Meloni

发明人： Mark A. Meloni

IPC分类号： G01N23223

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： A method and apparatus for the in-process measurement of the thickness and composition of a material layer on a workpiece during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing pad mounted thereto and an x-ray probe assembly mounted into a recessed volume in the platen. The x-ray probe assembly includes an x-ray emitter and an x-ray detector. The thickness and composition of the material layer on the workpiece is measured by generating and directing an incident x-ray beam onto a location on the surface of the wbrkpiece, and then capturing the resultant fluorescent beam and processing data from the resultant fluorescent beam.

摘要翻译： 公开了一种用于在化学机械抛光期间在工件上进行材料层厚度和组成的方法和装置。 化学机械抛光装置包括具有安装在其上的抛光垫的压板和安装在压板中的凹陷体积中的x射线探针组件。 x射线探针组件包括x射线发射器和x射线检测器。 工件上的材料层的厚度和组成通过产生并将入射的X射线束引导到摆臂表面上的位置上，然后从所得到的荧光束捕获所得到的荧光束和处理数据来测量。