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12 条记录 (耗时 0.018 秒)

    METHOD AND APPARATUS FOR USER-ADAPTIVE DATA ARRANGEMENT/CLASSIFICATION IN PORTABLE TERMINAL
    4.
    发明申请
    METHOD AND APPARATUS FOR USER-ADAPTIVE DATA ARRANGEMENT/CLASSIFICATION IN PORTABLE TERMINAL 审中-公开
    便携式终端用户自适应数据安排/分类方法与装置

    公开(公告)号：US20110310039A1

    公开(公告)日：2011-12-22

    申请号：US13161575

    申请日：2011-06-16

    申请人： Mi-Ra KIM

    发明人： Mi-Ra KIM

    IPC分类号： G06F3/041

    CPC分类号： G06F3/04883 ,  G06F3/0481 ,  G06F16/168

    摘要： A method and an apparatus for user-adaptive data arrangement/classification in a portable terminal. The method preferably includes: displaying all data elements stored in the portable terminal, and setting arrangement priorities of the displayed data elements by giving a tag to each displayed data element. Each displayed data element is captured and given the tag as an image; identifying the tag given to each displayed data element, and arranging and storing the captured images in unique priorities for each type of the tags; and grouping the stored images respectively given the tags according to the tag types.

    摘要翻译： 一种用于便携式终端中用户自适应数据排列/分类的方法和装置。 该方法优选地包括：显示存储在便携式终端中的所有数据元素，以及通过向每个显示的数据元素提供标签来设置所显示的数据元素的排列优先级。 捕获每个显示的数据元素并将其作为图像给出; 识别给予每个显示的数据元素的标签，以及将每个类型的标签的捕获的图像排列并存储在唯一的优先级中; 并根据标签类型对存储的分别给出标签的图像进行分组。

    Fabrication method of two-terminal semiconductor component using trench technology
    7.
    发明授权
    Fabrication method of two-terminal semiconductor component using trench technology 有权
    使用沟槽技术的二端子半导体元件的制造方法

    公开(公告)号：US08048800B2

    公开(公告)日：2011-11-01

    申请号：US12603766

    申请日：2009-10-22

    申请人： Jin-Koo Rhee ,  Seong-Dae Lee ,  Mi-Ra Kim ,  Dae-Hong Min ,  Wan-Joo Kim

    发明人： Jin-Koo Rhee ,  Seong-Dae Lee ,  Mi-Ra Kim ,  Dae-Hong Min ,  Wan-Joo Kim

    IPC分类号： H01L21/44 ,  H01L21/311

    CPC分类号： H01L29/6609 ,  H01L21/30625 ,  H01L29/66083 ,  H01L29/66166 ,  H01L29/66174

    摘要： A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.

    摘要翻译： 公开了一种使用沟槽技术制造二端子半导体部件的方法，包括通过蚀刻形成在其上生长有杂质添加的有源层的基板上形成的蚀刻图案来形成沟槽，在正面上方形成前金属层 在去除蚀刻图案之后，通过使用蒸镀法或溅射法形成基板的表面，在其上形成有前金属层的基板的前表面上形成金属镀层，使用在 至少一种机械抛光方法和化学抛光方法，直到暴露前金属层，在抛光的基底上形成后金属层，并且通过使用干蚀刻方法和湿蚀刻方法中的至少一种来去除每个部件。

    FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TRENCH TECHNOLOGY
    8.
    发明申请
    FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TRENCH TECHNOLOGY 有权
    使用TRENCH技术的双端半导体元件的制造方法

    公开(公告)号：US20110059609A1

    公开(公告)日：2011-03-10

    申请号：US12603766

    申请日：2009-10-22

    申请人： Jin-Koo Rhee ,  Seong-Dae Lee ,  Mi-Ra Kim ,  Dae-Hong Min

    发明人： Jin-Koo Rhee ,  Seong-Dae Lee ,  Mi-Ra Kim ,  Dae-Hong Min

    IPC分类号： H01L21/283

    CPC分类号： H01L29/6609 ,  H01L21/30625 ,  H01L29/66083 ,  H01L29/66166 ,  H01L29/66174

    摘要： A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.

    摘要翻译： 公开了一种使用沟槽技术制造二端子半导体部件的方法，包括通过蚀刻形成在其上生长有杂质添加的有源层的基板上形成的蚀刻图案来形成沟槽，在正面上方形成前金属层 在去除蚀刻图案之后，通过使用蒸镀法或溅射法形成基板的表面，在其上形成有前金属层的基板的前表面上形成金属镀层，使用在 至少一种机械抛光方法和化学抛光方法，直到暴露前金属层，在抛光的基底上形成后金属层，并且通过使用干蚀刻方法和湿蚀刻方法中的至少一种来去除每个部件。

    COMPOSITION FOR TREATING DAMAGE OF CENTRAL OR PERIPHERAL NERVE SYSTEM
    9.
    发明申请
    COMPOSITION FOR TREATING DAMAGE OF CENTRAL OR PERIPHERAL NERVE SYSTEM 审中-公开
    用于治疗中央或外周神经系统损伤的组合物

    公开(公告)号：US20090175835A1

    公开(公告)日：2009-07-09

    申请号：US12278722

    申请日：2007-01-19

    申请人： Young-Sook Son ,  Guang-Fan Chi ,  Mi-Ra Kim

    发明人： Young-Sook Son ,  Guang-Fan Chi ,  Mi-Ra Kim

    IPC分类号： A61K35/30 ,  C12N5/08 ,  A61P25/16 ,  A61P25/00

    CPC分类号： C12N5/0622 ,  A61K35/30 ,  C12N2501/115 ,  C12N2501/135 ,  C12N2501/195 ,  C12N2501/385

    摘要： The present invention provides a composition for treating damage of central or peripheral nerve system comprising neural precursor cell derived from subcutaneous tissue; neuron obtained by differentiating the neural precursor cell; or oligodendrocyte or Schwann cell obtained by differentiating the neural precursor cell; a use of neural precursor cell derived from subcutaneous tissue, neuron obtained by differentiating the neural precursor cell, or oligodendrocyte or Schwann cell obtained by differentiating the neural precursor cell, for the manufacture of an agent for treating damage of central or peripheral nerve system; a method for treating damage of central or peripheral nerve system which comprises administrating to a mammal a therapeutically effective amount of neural precursor cell derived from subcutaneous tissue, neurons obtained by differentiating the neural precursor cell, or oligodendrocyte or Schwann cell obtained by differentiating the neural precursor cell. Further, the present invention provides a method of preparing the neural precursor cell, neurons, oligodendrocyte or Schwann cell of the present invention.

    摘要翻译： 本发明提供一种用于治疗包含来自皮下组织的神经前体细胞的中枢或周围神经系统的损伤的组合物; 通过分化神经前体细胞获得的神经元; 或通过分化神经前体细胞获得的少突胶质细胞或雪旺氏细胞; 使用衍生自皮下组织的神经前体细胞，通过分化神经前体细胞获得的神经元，或通过分化神经前体细胞获得的少突胶质细胞或施旺细胞，用于制造用于治疗中枢或周围神经系统损伤的药剂; 用于治疗中枢或周围神经系统的损伤的方法，其包括向哺乳动物施用治疗有效量的来自皮下组织的神经前体细胞，通过分化神经前体细胞获得的神经元，或通过分化神经前体获得的少突胶质细胞或施万细胞 细胞。 此外，本发明提供了制备本发明的神经前体细胞，神经元，少突胶质细胞或雪旺氏细胞的方法。

    Solid-State Electrolyte Composition Containing Liquid Crystal Materials and Dye-Sensitized Solar Cells Using the Same
    10.
    发明申请
    Solid-State Electrolyte Composition Containing Liquid Crystal Materials and Dye-Sensitized Solar Cells Using the Same 审中-公开
    包含液晶材料的固体电解质组合物和使用其的染料敏化太阳能电池

    公开(公告)号：US20090133746A1

    公开(公告)日：2009-05-28

    申请号：US11887550

    申请日：2006-05-26

    申请人： Sung Ho Jin ,  Jin Kook Lee ,  Mi Ra Kim ,  Hyun Jeong Lee

    发明人： Sung Ho Jin ,  Jin Kook Lee ,  Mi Ra Kim ,  Hyun Jeong Lee

    IPC分类号： H01L31/00 ,  H01G9/025

    CPC分类号： H01G9/2009 ,  C09K19/12 ,  C09K19/3852 ,  C09K19/408 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/0076 ,  Y02E10/542

    摘要： This invention provides a solid-state electrolyte containing liquid crystal material and a solar cell using the same. According to this invention, since the solar cell includes the solid-state electrolyte containing the liquid crystal material, it does not require the use of a solvent and a sealing agent, as do conventional dye-sensitized solar cells using a liquid-state electrolyte, thus realizing a simple fabrication process. Further, the solar cell of this invention can exhibit much higher energy conversion efficiency than conventional dye-sensitized solar cells using a solid-state electrolyte.

    摘要翻译： 本发明提供一种含有液晶材料的固体电解质和使用其的太阳能电池。 根据本发明，由于太阳能电池包括含有液晶材料的固态电解质，因此与使用液态电解质的常规染料敏化太阳能电池一样，不需要使用溶剂和密封剂， 从而实现简单的制造工艺。 此外，与使用固态电解质的常规染料敏化太阳能电池相比，本发明的太阳能电池可以表现出更高的能量转换效率。