公开(公告)号：US5970368A

公开(公告)日：1999-10-19

申请号：US939660

申请日：1997-09-29

申请人： Hideyuki Sasaki ,  Michihiro Oose ,  Isao Suzuki ,  Shiro Takeno ,  Mitsuhiro Tomita ,  Yoshito Kawakyu ,  Yuki Matsuura ,  Hiroshi Mitsuhashi

发明人： Hideyuki Sasaki ,  Michihiro Oose ,  Isao Suzuki ,  Shiro Takeno ,  Mitsuhiro Tomita ,  Yoshito Kawakyu ,  Yuki Matsuura ,  Hiroshi Mitsuhashi

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/04

CPC分类号： H01L21/2026

摘要： There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C. is used to suppress heat dissipation from the molten liquid of the semiconductor to the substrate so that time until the complete solidification can be prolonged. Furthermore, the beam is irradiated so as to form a standing wave at a predetermined position of the surface of the semiconductor film to generate the heat density distribution having the same cycle with the standing wave and to melt the semiconductor film with the result that a polycrystal semiconductor film comprising a uniform and a large crystal grains by controlling the distribution of the crystal nuclei at the interface between the base film and the substrate.

摘要翻译： 公开了一种制造多晶半导体膜的方法，包括以下步骤：将高能束施加到包括设置在基板表面上的非晶或多晶半导体的半导体膜的表面，以仅熔化半导体膜，并固化 通过固体和液体共存状态形成包含具有大粒径的多晶半导体的半导体膜，通过使用液体中的电阻差和固体共存状态加热液体部分以仅加热液体部分， 并延长凝固时间直到熔融液晶膜凝固完成。 此外，作为半导体膜的基膜，具有熔点为1600℃，导热率为0.01cal / cm 3的材料。 使用DEG来抑制从半导体的熔融液体到基板的散热，从而可以延长直到完全凝固的时间。 此外，照射光束以在半导体膜的表面的预定位置处形成驻波，以产生具有与驻波相同周期的热密度分布并熔化半导体膜，结果是多晶 通过控制在基膜和基板之间的界面处的晶核的分布而包含均匀和大的晶粒的半导体膜。

公开(公告)号：US5682041A

公开(公告)日：1997-10-28

申请号：US651661

申请日：1996-05-21

申请人： Takashi Kawakubo ,  Hideo Hirayama ,  Kenya Sano ,  Michihiro Oose ,  Junsei Tsutsumi

发明人： Takashi Kawakubo ,  Hideo Hirayama ,  Kenya Sano ,  Michihiro Oose ,  Junsei Tsutsumi

IPC分类号： H01L29/15 ,  H01L29/161 ,  H01L29/221 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66 ,  H01L29/737 ,  H01L29/76 ,  H01L29/88 ,  H01L45/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： B82Y10/00 ,  H01L29/155 ,  H01L29/161 ,  H01L29/221 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66977 ,  H01L29/7376 ,  H01L29/7606 ,  H01L29/882 ,  H01L45/00

摘要： An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect. The artificial super lattice possesses a barrier layer formed of an insulating substance and an electrode layer formed of a substance of good conductivity and disposed in contact with the barrier layers.

摘要翻译： 公开了一种电子部件，其具有通过将选自属于3A〜6A族的过渡元素的元素和稀土元素之间的化合物形成的具有良好导电性的物质交替重叠的人造超晶格和 选自硼，碳，氮，磷，硒和碲中的元素，或选自7A和8族的元素的氧和过渡金属元素之间的化合物，以及由简单金属 选自属于组1A，组2A和组1B至4B的元素和选自碳，氮，氧，磷，硫，硒，碲和卤素元素的元素，其厚度适合于获得量子尺寸 影响。 人造超晶格具有由绝缘物质形成的阻挡层和由导电性良好的物质形成并与阻挡层接触的电极层。