公开(公告)号：US06693020B2

公开(公告)日：2004-02-17

申请号：US09803749

申请日：2001-03-12

申请人： Kok Wai Mui ,  Fuaida Bte Harun ,  Lan Chu Tan ,  Mohd Faizairi Bin Mohd Nor

发明人： Kok Wai Mui ,  Fuaida Bte Harun ,  Lan Chu Tan ,  Mohd Faizairi Bin Mohd Nor

IPC分类号： H01L21322

CPC分类号： H01L24/05 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/32134 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85011 ,  H01L2224/85013 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  Y10S438/905 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/03

摘要： A method of preparing a semiconductor wafer having a integrated circuits formed on it that have pads formed of copper includes the steps of removing oxide from the copper pads and then the vacuum packing the wafer in a shock-proof container. The oxide may be removed from the copper pads in a number of ways. A first way includes cleaning the wafer in an alkaline solution, performing acid neutralization on the cleaned wafer, and then drying the wafer. A second way includes cleaning the wafer with an acid solution, rinsing the acid cleaned wafer with water, applying an anti-oxidant activator to the surface of the copper pads, rinsing the wafer with water after the application of the anti-oxidant activator, and then drying the water rinsed wafer. Yet a third way includes plasma cleaning the copper pads using a combination of about 5-10% Hydrogen and about 90-95% Argon and then sputtering a very thin layer of aluminum on a surface of the copper pads. The layer of aluminum has a thickness of about 1-5 nanometers.

摘要翻译： 制备具有形成在其上的具有由铜形成的焊盘的集成电路的半导体晶片的方法包括以下步骤：从铜焊盘去除氧化物，然后将晶片真空包装在防震容器中。 可以以多种方式从铜焊盘去除氧化物。 第一种方法包括在碱性溶液中清洗晶片，在清洁的晶片上进行酸中和，然后干燥晶片。 第二种方法包括用酸溶液清洗晶片，用水冲洗酸洗的晶片，将抗氧化剂活化剂施加到铜垫的表面，在施用抗氧化剂活化剂之后用水冲洗晶片;以及 然后干燥水冲洗的晶片。 第三种方法包括使用约5-10％氢气和约90-95％氩气的组合对铜焊盘进行等离子体清洗，然后在铜焊盘的表面上溅射非常薄的铝层。 铝层的厚度约为1-5纳米。