公开(公告)号：US08266367B2

公开(公告)日：2012-09-11

申请号：US12475457

申请日：2009-05-29

申请人： Frank Yu ,  Charles C. Lee ,  Abraham C. Ma ,  Myeongjin Shin

发明人： Frank Yu ,  Charles C. Lee ,  Abraham C. Ma ,  Myeongjin Shin

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F12/0246 ,  G06F3/0608 ,  G06F3/0631 ,  G06F3/0688 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/5678 ,  G11C13/0004 ,  G11C29/765

摘要： Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.

摘要翻译： 截断将所有闪存通道的可用条带数据容量减小到最小闪存通道的容量。 固态磁盘（SSD）具有智能存储交换机，通过截断来保护从条带数据容量中移除的闪存存储。 超出条带数据容量的额外存储被访问为不带条纹的分散数据。 随着更多的坏块出现，条带数据容量的大小随着时间的推移而减少。 一级条形图存储所有闪存通道的条纹和分散容量，并映射散射和条纹数据。 每个闪存通道都具有一个非易失性存储器件（NVMD），该器件具有将逻辑块地址（LBA）转换为访问NVMD中闪存的物理块地址（PBA）的低级别控制器。 磨损平整和坏块重映射由每个NVMD进行。 源和阴影闪存块由NVMD回收。 两级智能存储交换机支持三级控制器。

公开(公告)号：US07873885B1

公开(公告)日：2011-01-18

申请号：US12356072

申请日：2009-01-19

申请人： MyeongJin Shin ,  Charles C. Lee ,  I-Kang Yu ,  Abraham Chih-Kang Ma

发明人： MyeongJin Shin ,  Charles C. Lee ,  I-Kang Yu ,  Abraham Chih-Kang Ma

IPC分类号： G01R31/28 ,  G11C16/04

CPC分类号： G11C29/56 ,  G11C5/04 ,  G11C16/04 ,  G11C29/08

摘要： Solid state drive (SSD) testing processes and methods are disclosed. In one embodiment, the SSD testing process comprises: specifying a set of test parameters of firmware, operating system and flash memory for a plurality of SSDs under test (DUTs) in an SSD test system, the set of test parameters includes a model number, a serial number, a desired defective or bad block ratio and a size of the firmware, wherein the model and serial number are configured onto each of the DUTs; performing an initialization test of all of the DUTs based on the specified test parameters to determine a pre-qualified group of the DUTs that passed the initialization test; conducting at least one level of burn-in test for each SSD in the pre-qualified group; conducting at least one level of burn-in test for each SSD in the pre-qualified group; and assigning a quality grade to said each SSD based on which level of the at least one level of burn-in test said each SSD has been tested and passed, wherein the quality grade includes a commercial grade SSD made using at least one Multi-Level Cell flash memory.

摘要翻译： 公开了固态硬盘（SSD）测试过程和方法。 在一个实施例中，SSD测试过程包括：为SSD测试系统中的多个测试SSD（DUT）指定固件，操作系统和闪存的一组测试参数，该组测试参数包括型号， 序列号，期望的有缺陷或坏块比率以及固件的大小，其中模型和序列号被配置到每个DUT上; 基于指定的测试参数对所有DUT进行初始化测试，以确定通过初始化测试的DUT的预限定组; 对预合格组中的每个SSD进行至少一级的老化测试; 对预合格组中的每个SSD进行至少一级的老化测试; 以及基于所述至少一个级别的所述老化测试的所述每个SSD已经被测试和通过的所述每个SSD分配质量等级，其中所述质量等级包括使用至少一个多级别制造的商业级SSD 单元闪存

公开(公告)号：US20090193184A1

公开(公告)日：2009-07-30

申请号：US12418550

申请日：2009-04-03

申请人： Frank Yu ,  Charles C. Lee ,  Abraham C. Ma ,  Myeongjin Shin

发明人： Frank Yu ,  Charles C. Lee ,  Abraham C. Ma ,  Myeongjin Shin

IPC分类号： G06F12/02 ,  G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5678 ,  G11C13/00 ,  G11C13/0004 ,  G11C2211/5641

摘要： A hybrid solid-state disk (SSD) has multi-level-cell (MLC) or single-level-cell (SLC) flash memory, or both. SLC flash may be emulated by MLC that uses fewer cell states. A NVM controller converts logical block addresses (LBA) to physical block addresses (PBA). Most data is block-mapped and stored in MLC flash, but some critical or high-frequency data is page-mapped to reduce block-relocation copying. A hybrid mapping table has a first-level and a second level. Only the first level is used for block-mapped data, but both levels are used for page-mapped data. The first level contains a block-page bit that indicates if the data is block-mapped or page-mapped. A PBA field in the first-level table maps block-mapped data, while a virtual field points to the second-level table where the PBA and page number is stored for page-mapped data. Page-mapped data is identified by a frequency counter or sector count. SRAM space is reduced.

摘要翻译： 混合固态盘（SSD）具有多级单元（MLC）或单级单元（SLC）闪存，或两者兼有。 SLC闪存可能由使用较少单元状态的MLC仿真。 NVM控制器将逻辑块地址（LBA）转换为物理块地址（PBA）。 大多数数据被块映射并存储在MLC闪存中，但是一些关键或高频数据被页映射以减少块重定位复制。 混合映射表具有第一级和第二级。 只有第一级用于块映射数据，但是这两个级别都用于页映射数据。 第一级包含一个块页位，指示数据是块映射还是页映射。 第一级表中的PBA字段映射块映射数据，而虚拟字段指向存储页面映射数据的PBA和页码的二级表。 页面映射数据由频率计数器或扇区计数来标识。 SRAM空间减少。

公开(公告)号：US20090240873A1

公开(公告)日：2009-09-24

申请号：US12475457

申请日：2009-05-29

申请人： Frank Yu ,  Charles C. Lee ,  Abraham C. Ma ,  Myeongjin Shin

发明人： Frank Yu ,  Charles C. Lee ,  Abraham C. Ma ,  Myeongjin Shin

IPC分类号： G06F12/00 ,  G06F12/02 ,  H03M13/00

CPC分类号： G06F12/0246 ,  G06F3/0608 ,  G06F3/0631 ,  G06F3/0688 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/5678 ,  G11C13/0004 ,  G11C29/765

摘要： Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.

摘要翻译： 截断将所有闪存通道的可用条带数据容量减小到最小闪存通道的容量。 固态磁盘（SSD）具有智能存储交换机，通过截断来保护从条带数据容量中移除的闪存存储。 超出条带数据容量的额外存储被访问为不带条纹的分散数据。 随着更多的坏块出现，条带数据容量的大小随着时间的推移而减少。 一级条形图存储所有闪存通道的条纹和分散容量，并映射散射和条纹数据。 每个闪存通道都具有一个非易失性存储器件（NVMD），该器件具有将逻辑块地址（LBA）转换为访问NVMD中闪存的物理块地址（PBA）的低级别控制器。 磨损平整和坏块重映射由每个NVMD进行。 源和阴影闪存块由NVMD回收。 两级智能存储交换机支持三级控制器。