公开(公告)号：US08659031B2

公开(公告)日：2014-02-25

申请号：US13700667

申请日：2010-06-07

申请人： Myunghee Kim

发明人： Myunghee Kim

IPC分类号： H01L29/15

CPC分类号： H01L21/0243 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S2304/12

摘要： A surface of a sapphire (0001) substrate is processed so as to have recesses and protrusions so that protrusion tops are made flat and have a given plan-view pattern. An initial-stage AlN layer is epitaxially grown on the surface of the sapphire (0001) substrate so that new recesses are formed over the recesses, by performing C axis orientation control so that a C+ axis oriented AlN layer grows on flat surfaces of the protrusion tops, excluding edges. A first ELO layer including an AlN (0001) layer is epitaxially grown on the initial-stage AlN layer by an epitaxial lateral overgrowth method, and stops growing before a recess upper region above the new recesses is completely covered with the first ELO layer that is laterally grown from a protrusion upper surface of the initial-stage AlN layer. A second ELO layer including an AlxGa1-xN (0001) layer (1>x>0) is epitaxially grown on the first ELO layer by an epitaxial lateral overgrowth method. The recess upper region is completely covered with the second ELO layer that is laterally grown from an upper surface of the first ELO layer.

摘要翻译： 将蓝宝石（0001）基板的表面加工成具有凹凸，使凸起顶部变平坦且具有给定的平面图。 在蓝宝石（0001）基板的表面上外延生长初始阶段的AlN层，使得通过进行C轴取向控制使得在凹部上形成新的凹部，使得C +轴取向的AlN层在突起的平坦表面上生长 顶部，不包括边缘。 包含AlN（0001）层的第一ELO层通过外延侧面生长方法在初始阶段AlN层上外延生长，并且在新凹部之上的凹部上部区域被第一ELO层完全覆盖之前停止生长 从初始阶段AlN层的突起上表面横向生长。 包含Al x Ga 1-x N（0001）层（1> x> 0）的第二ELO层通过外延横向生长法在第一ELO层上外延生长。 凹部上部区域被从第一ELO层的上表面横向生长的第二ELO层完全覆盖。

公开(公告)号：US20120258286A1

公开(公告)日：2012-10-11

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  C30B29/40

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US09412586B2

公开(公告)日：2016-08-09

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L33/00

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US20130069079A1

公开(公告)日：2013-03-21

申请号：US13700667

申请日：2010-06-07

申请人： Myunghee Kim

发明人： Myunghee Kim

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/0243 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S2304/12

摘要： A surface of a sapphire (0001) substrate is processed so as to have recesses and protrusions so that protrusion tops are made flat and have a given plan-view pattern. An initial-stage AlN layer is epitaxially grown on the surface of the sapphire (0001) substrate so that new recesses are formed over the recesses, by performing C axis orientation control so that a C+ axis oriented AlN layer grows on flat surfaces of the protrusion tops, excluding edges. A first ELO layer including an AlN (0001) layer is epitaxially grown on the initial-stage AlN layer by an epitaxial lateral overgrowth method, and stops growing before a recess upper region above the new recesses is completely covered with the first ELO layer that is laterally grown from a protrusion upper surface of the initial-stage AlN layer. A second ELO layer including an AlxGa1-xN (0001) layer (1>x>0) is epitaxially grown on the first ELO layer by an epitaxial lateral overgrowth method. The recess upper region is completely covered with the second ELO layer that is laterally grown from an upper surface of the first ELO layer.

摘要翻译： 将蓝宝石（0001）基板的表面加工成具有凹凸，使凸起顶部变平坦且具有给定的平面图。 在蓝宝石（0001）基板的表面上外延生长初始阶段的AlN层，使得通过进行C轴取向控制使得在凹部上形成新的凹部，使得C +轴取向的AlN层在突起的平坦表面上生长 顶部，不包括边缘。 包含AlN（0001）层的第一ELO层通过外延侧面生长方法在初始阶段AlN层上外延生长，并且在新凹部之上的凹部上部区域完全被第一ELO层覆盖之前停止生长 从初始阶段AlN层的突起上表面横向生长。 包含Al x Ga 1-x N（0001）层（1> x> 0）的第二ELO层通过外延横向生长法在第一ELO层上外延生长。 凹部上部区域被从第一ELO层的上表面横向生长的第二ELO层完全覆盖。