公开(公告)号：US20120258286A1

公开(公告)日：2012-10-11

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  C30B29/40

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US09412586B2

公开(公告)日：2016-08-09

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L33/00

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US20070008539A1

公开(公告)日：2007-01-11

申请号：US10550824

申请日：2004-03-23

申请人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： G01N21/00 ,  G08B17/12

CPC分类号： G02B5/284

摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).

摘要翻译： 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y） ，0 <= y <= 1）。

公开(公告)号：US07361948B2

公开(公告)日：2008-04-22

申请号：US10550824

申请日：2004-03-23

申请人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L31/062

CPC分类号： G02B5/284

摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).

摘要翻译： 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y） ，0 <= y <= 1）。

公开(公告)号：US20080277670A1

公开(公告)日：2008-11-13

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L33/00

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US07297989B2

公开(公告)日：2007-11-20

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

公开(公告)号：US20070145557A1

公开(公告)日：2007-06-28

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L23/02

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

公开(公告)号：US20060043396A1

公开(公告)日：2006-03-02

申请号：US11215406

申请日：2005-08-29

申请人： Michinobu Tsuda ,  Masataka Imura ,  Akira Honshio ,  Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Michinobu Tsuda ,  Masataka Imura ,  Akira Honshio ,  Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L29/22

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/16

摘要： An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°

摘要翻译： 一种用于制造场效应晶体管（FET）的外延衬底，其具有至少由氮化镓或氮化铟镓制成的沟道层和由氮化铝镓制成的势垒层在蓝宝石衬底的主面上连续形成的异质结结构， 其中所述蓝宝石衬底半导体的主平面从（01-12）面朝向（0001）面倾斜角度α为0°

公开(公告)号：US07612381B2

公开(公告)日：2009-11-03

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

公开(公告)号：US07855385B2

公开(公告)日：2010-12-21

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L31/0312

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于 受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。