SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20130019044A1

    公开(公告)日:2013-01-17

    申请号:US13547799

    申请日:2012-07-12

    IPC分类号: G06F13/40

    CPC分类号: G06F13/40 G06F13/4059

    摘要: A semiconductor memory device includes a memory cell array section including a plurality of memory cell arrays, a peripheral circuit section, and an internal bus 4 connecting the plurality of memory cell arrays and the peripheral circuit section. The peripheral circuit section includes a plurality of external input/output buffers 23, and a plurality of bus interface circuits 24. The plurality of bus interface circuits execute conversion between data inputted/outputted in parallel to/from the memory cell arrays through the internal bus and data inputted/outputted in serial through the plurality of external input/output buffers. The plurality of bus interface circuits 24 are densely arranged between the internal bus 4 and the plurality of external input/output buffers, so that a width d1 of the area of the plurality of bus interface circuits being arranged is narrower than a width d2 of the area of the plurality of external input/output buffers being arranged and a bus width maximum value d3 of the internal bus.

    摘要翻译: 半导体存储器件包括存储单元阵列部分,其包括多个存储单元阵列,外围电路部分和连接多个存储单元阵列和外围电路部分的内部总线4。 外围电路部分包括多个外部输入/输出缓冲器23和多个总线接口电路24.多个总线接口电路通过内部总线执行与存储单元阵列并行输入/输出的数据之间的转换 以及通过多个外部输入/输出缓冲器串行输入/输出的数据。 多个总线接口电路24密集地布置在内部总线4和多个外部输入/输出缓冲器之间,使得布置的多个总线接口电路的区域的宽度d1比宽度d2窄 布置多个外部输入/输出缓冲器的区域和内部总线的总线宽度最大值d3。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20100194204A1

    公开(公告)日:2010-08-05

    申请号:US12698567

    申请日:2010-02-02

    IPC分类号: G05F1/10

    摘要: A device includes a first circuit and an adjustment circuit. The adjustment circuit performs an adjustment on impedance of the first circuit. The adjustment circuit discontinues the adjustment on impedance while the first circuit is in an activated state.

    摘要翻译: 一种装置包括第一电路和调整电路。 调整电路对第一电路的阻抗进行调整。 当第一电路处于激活状态时,调节电路中断阻抗调整。

    Semiconductor memory device for high speed reading and writing
    4.
    发明授权
    Semiconductor memory device for high speed reading and writing 有权
    半导体存储器件,用于高速读写

    公开(公告)号:US09152594B2

    公开(公告)日:2015-10-06

    申请号:US13547799

    申请日:2012-07-12

    IPC分类号: G06F13/36 G06F13/40

    CPC分类号: G06F13/40 G06F13/4059

    摘要: A semiconductor memory device includes a memory cell array section including a plurality of memory cell arrays, a peripheral circuit section, and an internal bus connecting the plurality of memory cell arrays and the peripheral circuit section. The peripheral circuit section includes external input/output buffers, and bus interface circuits. The bus interface circuits execute conversion between data inputted/outputted in parallel to/from the memory cell arrays through the internal bus and data inputted/outputted in serial through the plurality of external input/output buffers. The bus interface circuits are densely arranged between the internal bus and the input/output buffers, so that a width d1 of the area of the plurality of bus interface circuits being arranged is narrower than a width d2 of the area of the external input/output buffers being arranged and a bus width maximum value d3 of the internal bus.

    摘要翻译: 半导体存储器件包括存储单元阵列部分,其包括多个存储单元阵列,外围电路部分和连接多个存储单元阵列和外围电路部分的内部总线。 外围电路部分包括外部输入/输出缓冲器和总线接口电路。 总线接口电路通过内部总线和通过多个外部输入/输出缓冲器以串行方式输入/输出的数据在与存储单元阵列并行输入/输出的数据之间执行转换。 总线接口电路密集地布置在内部总线和输入/输出缓冲器之间,使得布置的多个总线接口电路的区域的宽度d1比外部输入/输出区域的宽度d2窄 布置的缓冲器和内部总线的总线宽度最大值d3。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08106676B2

    公开(公告)日:2012-01-31

    申请号:US12691215

    申请日:2010-01-21

    IPC分类号: H03K19/003

    摘要: A semiconductor device includes a signal generating circuit that generates an impedance adjustment command signal which indicates at least one of initiation and termination of an impedance adjustment. The semiconductor device outputs an output signal in synchronism with the impedance adjustment command signal.

    摘要翻译: 一种半导体器件包括产生阻抗调节指令信号的信号发生电路,该阻抗调整指令信号指示阻抗调整的起始和终止中的至少一个。 半导体器件与阻抗调整指令信号同步地输出输出信号。

    CALIBRATION CIRCUIT AND CALIBRATION METHOD
    6.
    发明申请
    CALIBRATION CIRCUIT AND CALIBRATION METHOD 审中-公开
    校准电路和校准方法

    公开(公告)号:US20100177588A1

    公开(公告)日:2010-07-15

    申请号:US12687584

    申请日:2010-01-14

    IPC分类号: G11C8/18 H03L7/00

    摘要: A calibration circuit includes replica buffers that have a substantially same circuit configuration as at least a part of an output buffer, an oscillator circuit that generates an internal clock in response to issuance of a calibration command, and a control circuit that controls an impedance of the replica buffers in synchronization with the internal clock. According to the present invention, because a calibration operation that does not depend on an external clock is performed, even when a frequency of the external clock is changed according to an operation mode or the like, it is possible to maintain a constant period of time given to a single adjustment step or a constant time required for a series of calibration operations.

    摘要翻译: 校准电路包括具有与输出缓冲器的至少一部分基本相同的电路配置的复制缓冲器,响应于发出校准命令产生内部时钟的振荡器电路,以及控制电路 复制缓冲器与内部时钟同步。 根据本发明,由于执行不依赖于外部时钟的校准操作,即使当外部时钟的频率根据操作模式等而改变时,也可以保持恒定的时间段 给予一系列校准操作所需的单个调整步骤或恒定时间。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08018246B2

    公开(公告)日:2011-09-13

    申请号:US12698567

    申请日:2010-02-02

    IPC分类号: H03K19/003 H03K17/16

    摘要: A device includes a first circuit and an adjustment circuit. The adjustment circuit performs an adjustment on impedance of the first circuit. The adjustment circuit discontinues the adjustment on impedance while the first circuit is in an activated state.

    摘要翻译: 一种装置包括第一电路和调整电路。 调整电路对第一电路的阻抗进行调整。 当第一电路处于激活状态时,调节电路中断阻抗调整。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20100188102A1

    公开(公告)日:2010-07-29

    申请号:US12691215

    申请日:2010-01-21

    IPC分类号: G01R35/00

    摘要: A semiconductor device includes a signal generating circuit that generates an impedance adjustment command signal which indicates at least one of initiation and termination of an impedance adjustment. The semiconductor device outputs an output signal in synchronism with the impedance adjustment command signal.

    摘要翻译: 一种半导体器件包括产生阻抗调节指令信号的信号发生电路,该阻抗调整指令信号指示阻抗调整的起始和终止中的至少一个。 半导体器件与阻抗调整指令信号同步地输出输出信号。