公开(公告)号：US20120241090A1

公开(公告)日：2012-09-27

申请号：US13429638

申请日：2012-03-26

申请人： Jun Yoshikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa ,  Shota Yoshimura ,  Kazuki Takahashi

发明人： Jun Yoshikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa ,  Shota Yoshimura ,  Kazuki Takahashi

IPC分类号： B05C9/00 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/3244 ,  H01J37/32651

摘要： A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.

摘要翻译： 等离子体处理装置包括处理室; 气体供给单元，用于将处理气体供给到所述处理室中; 用于产生微波的微波发生器; 用于将用于等离子体激发的微波引入处理室的天线; 设置在微波发生器和天线之间的同轴波导; 保持单元，设置成在所述同轴波导的中心轴线方向上面对所述天线，用于保持处理对象基板; 设置在所述天线和所述保持单元之间的用于将所述微波从所述天线发射到所述处理室中的电介质窗口; 以及设置在沿着中心轴线的保持单元和电介质窗口之间的区域中的介电棒。

公开(公告)号：US09111726B2

公开(公告)日：2015-08-18

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US20120267048A1

公开(公告)日：2012-10-25

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： B05C5/00

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US08920596B2

公开(公告)日：2014-12-30

申请号：US12862915

申请日：2010-08-25

申请人： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

发明人： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/32192 ,  C23C16/513 ,  H01J37/3244 ,  H01J37/32449

摘要： In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

摘要翻译： 在通过对引入到处理容器中的处理气体进行等离子体处理衬底的等离子体处理装置中，在处理容器的顶表面上形成引入处理气体的引入单元; 气体保持部，其通过供给通路收集从处理容器的外部供给的处理气体，并且在导入单元中形成有能够使气体保持部与处理容器内部连通的多个气体喷出孔 ; 在气体保持部的与供给通道的开口相对的位置处不形成气体喷出孔; 并且每个气体喷射孔的横截面具有扁平形状。

公开(公告)号：US09277637B2

公开(公告)日：2016-03-01

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US20130302992A1

公开(公告)日：2013-11-14

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US20130093321A1

公开(公告)日：2013-04-18

申请号：US13638345

申请日：2011-03-24

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

发明人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

IPC分类号： H01J23/36 ,  H01J9/44

CPC分类号： H01J23/36 ,  H01J9/44 ,  H01J37/32192 ,  H01J37/32238

摘要： In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.

摘要翻译： 在用于等离子体处理装置的电介质窗41中，在电介质窗41的表面的外部区域，在电介质窗口41的产生等离子体的一侧的直径方向形成有第一电介质窗凹部47， 第一电介质窗凹部47以环状延伸，并且在电介质窗口41的厚度方向上向内具有锥形。多个第二电介质窗凹部53a至53g形成在电介质窗41的中心和 第一电介质窗凹部47，并且第二电介质窗凹部53a至53g中的每一个从电介质窗口41的表面沿电介质窗41的厚度方向向内凹陷。

公开(公告)号：USD672377S1

公开(公告)日：2012-12-11

申请号：US29369650

申请日：2010-09-10

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

设计人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

公开(公告)号：US09595425B2

公开(公告)日：2017-03-14

申请号：US13541940

申请日：2012-07-05

申请人： Naoki Matsumoto ,  Wataru Yoshikawa ,  Jun Yoshikawa ,  Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa

发明人： Naoki Matsumoto ,  Wataru Yoshikawa ,  Jun Yoshikawa ,  Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32238

摘要： An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.

摘要翻译： 天线，电介质窗，等离子体处理装置和等离子体处理方法能够提高基板表面的基板表面处理量的均匀性。 天线包括电介质窗16; 以及设置在电介质窗口16的一侧上的槽板20，具有多个狭槽133.介电窗口16具有由环形的第一凹部包围的平坦表面146; 以及形成在平坦表面146上以围绕平坦表面146的中心的多个第二凹部153.这里，平坦表面146形成在电介质窗口16的另一侧。当从厚度方向 槽板，每个第二凹槽153的中心位于槽板的每个槽133内。

公开(公告)号：US08988012B2

公开(公告)日：2015-03-24

申请号：US13638345

申请日：2011-03-24

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

发明人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

IPC分类号： H01J7/46 ,  H01J23/36 ,  H01J37/32 ,  H01J9/44

CPC分类号： H01J23/36 ,  H01J9/44 ,  H01J37/32192 ,  H01J37/32238

摘要： In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.

摘要翻译： 在用于等离子体处理装置的电介质窗41中，在电介质窗41的表面的外部区域，在电介质窗口41的产生等离子体的一侧的直径方向形成有第一电介质窗凹部47， 第一电介质窗凹部47以环状延伸，并且在电介质窗口41的厚度方向上向内具有锥形。多个第二电介质窗凹部53a至53g形成在电介质窗41的中心和 第一电介质窗凹部47，并且第二电介质窗凹部53a至53g中的每一个从电介质窗41的表面沿介质窗41的厚度方向向内凹陷。