公开(公告)号：US20120241090A1

公开(公告)日：2012-09-27

申请号：US13429638

申请日：2012-03-26

申请人： Jun Yoshikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa ,  Shota Yoshimura ,  Kazuki Takahashi

发明人： Jun Yoshikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa ,  Shota Yoshimura ,  Kazuki Takahashi

IPC分类号： B05C9/00 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/3244 ,  H01J37/32651

摘要： A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.

摘要翻译： 等离子体处理装置包括处理室; 气体供给单元，用于将处理气体供给到所述处理室中; 用于产生微波的微波发生器; 用于将用于等离子体激发的微波引入处理室的天线; 设置在微波发生器和天线之间的同轴波导; 保持单元，设置成在所述同轴波导的中心轴线方向上面对所述天线，用于保持处理对象基板; 设置在所述天线和所述保持单元之间的用于将所述微波从所述天线发射到所述处理室中的电介质窗口; 以及设置在沿着中心轴线的保持单元和电介质窗口之间的区域中的介电棒。

公开(公告)号：US20120026593A1

公开(公告)日：2012-02-02

申请号：US13258651

申请日：2010-03-11

申请人： Shota Yoshimura ,  Masaru Sasaki

发明人： Shota Yoshimura ,  Masaru Sasaki

IPC分类号： G02B27/12 ,  C23F1/00

CPC分类号： B29D11/00365 ,  B29D11/00298 ,  G03F7/0005

摘要： There is provided a manufacturing method for a microlens array including a multiple number of microlenses protruded in a substantially hemispherical shape from a surface. The manufacturing method includes forming a resist layer for forming a shape of the microlenses on an organic film layer serving as a material layer of the microlenses; and etching the formed resist layer and the organic film layer by using a mixed gas including hydrogen-containing molecules and fluorine-containing molecules.

摘要翻译： 提供了一种微透镜阵列的制造方法，其包括从表面突出成大致半球形的多个微透镜。 制造方法包括在用作微透镜的材料层的有机膜层上形成用于形成微透镜的形状的抗蚀剂层; 并且通过使用包含含氢分子和含氟分子的混合气体蚀刻所形成的抗蚀剂层和有机膜层。

公开(公告)号：US08969210B2

公开(公告)日：2015-03-03

申请号：US13232160

申请日：2011-09-14

申请人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

发明人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/762 ,  H01L21/768 ,  H01L29/66

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76897 ,  H01L29/6653 ,  H01L29/6656

摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

摘要翻译： 提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。 等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。

公开(公告)号：US20120064726A1

公开(公告)日：2012-03-15

申请号：US13232160

申请日：2011-09-14

申请人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

发明人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76897 ,  H01L29/6653 ,  H01L29/6656

摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

摘要翻译： 提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。 等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。