利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.016 seconds)

    VERY LOW DIELECTRIC CONSTANT PLASMA-ENHANCED CVD FILMS
    1.
    发明申请
    VERY LOW DIELECTRIC CONSTANT PLASMA-ENHANCED CVD FILMS 有权

    公开(公告)号：US20060240652A1

    公开(公告)日：2006-10-26

    申请号：US11424719

    申请日：2006-06-16

    Applicant: Robert Mandal

    Inventor： Robert Mandal

    IPC: H01L21/22 ,  H01L21/38 ,  H01L21/4763

    CPC classification number: C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

    Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

    VERY LOW DIELECTRIC CONSTANT PLASMA-ENHANCED CVD FILMS
    5.
    发明申请
    VERY LOW DIELECTRIC CONSTANT PLASMA-ENHANCED CVD FILMS 有权
    非常低的电介质等离子体增强CVD膜

    公开(公告)号：US20060226548A1

    公开(公告)日：2006-10-12

    申请号：US11424790

    申请日：2006-06-16

    Applicant: Robert Mandal

    Inventor： Robert Mandal

    IPC: H01L23/48

    CPC classification number: C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

    Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

    Abstract translation: 本发明提供一种沉积纳米多孔低介电常数膜的方法，该方法通过使含氧化硅的化合物或包含可氧化硅组分的混合物和具有热可能性基团的可氧化非硅组分与一氧化二氮，氧，臭氧或其它 气相等离子体增强反应中活性氧的来源。 将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过甲基甲硅烷基-1,4-二氧杂环戊烯醚或甲基硅氧烷基呋喃与2,4,6-三吡咯烷或环-1,3,5,7-四亚锡-2,6-二氧代 -4,8二亚甲基与一氧化二氮或氧气接着进行包括逐渐升高的固化/退火。

    CVD plasma assisted low dielectric constant films
    6.
    发明申请
    CVD plasma assisted low dielectric constant films 有权
    CVD等离子体辅助低介电常数膜

    公开(公告)号：US20050059264A1

    公开(公告)日：2005-03-17

    申请号：US10958772

    申请日：2004-10-05

    Applicant: David Cheung ,  Wai-Fan Yau ,  Robert Mandal

    Inventor： David Cheung ,  Wai-Fan Yau ,  Robert Mandal

    IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/469

    CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

    Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

    Very low dielectric constant plasma-enhanced CVD films
    7.
    发明申请
    Very low dielectric constant plasma-enhanced CVD films 有权
    非常低的介电常数等离子体增强CVD膜

    公开(公告)号：US20050153574A1

    公开(公告)日：2005-07-14

    申请号：US11001761

    申请日：2004-12-02

    Applicant: Robert Mandal

    Inventor： Robert Mandal

    IPC: H01L21/768 ,  C23C16/40 ,  C23C16/56 ,  H01L21/205 ,  H01L21/316 ,  H01L23/522 ,  H01L21/311 ,  H01L21/31 ,  H01L21/469

    CPC classification number: C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249976 ,  Y10T428/249978 ,  Y10T428/249994

    Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

    Abstract translation: 本发明提供一种沉积纳米多孔低介电常数膜的方法，该方法通过使含氧化硅的化合物或包含可氧化硅组分的混合物和具有热可能性基团的可氧化非硅组分与一氧化二氮，氧，臭氧或其它 气相等离子体增强反应中活性氧的来源。 将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过甲基甲硅烷基-1,4-二氧杂环戊烯醚或甲基硅氧烷基呋喃与2,4,6-三吡咯烷或环-1,3,5,7-四亚锡-2,6-二氧代 -4,8二亚甲基与一氧化二氮或氧气接着进行包括逐渐升高的固化/退火。

Patent Agency Ranking