公开(公告)号：US06717143B2

公开(公告)日：2004-04-06

申请号：US10136692

申请日：2002-04-30

申请人： Paul J. Duval ,  Anastasia Y. Tyurina ,  Neal T. Sullivan

发明人： Paul J. Duval ,  Anastasia Y. Tyurina ,  Neal T. Sullivan

IPC分类号： G21K700

CPC分类号： H01J37/28 ,  H01J37/145 ,  H01J37/1472

摘要： An apparatus for imaging the surface of a sample, such as a scanning electron microscope. The apparatus generates a beam of charged particles directed at the surface, and includes an objective lens and an electrostatic lens for controlling the particle beam. The objective lens and the electrostatic lens constitute a compound lens that has an axis. The beam is controlled so that it travels along the axis of the compound lens in order to avoid adverse consequences induced by, for example, mechanical misalignments and as manifested when the focus of one of the objective and electrostatic lenses is changed during operation of the apparatus.

摘要翻译： 用于对样品表面进行成像的装置，例如扫描电子显微镜。 该装置产生指向表面的带电粒子束，并且包括用于控制粒子束的物镜和静电透镜。 物镜和静电透镜构成具有轴的复合透镜。 控制光束使其沿着复合透镜的轴线行进，以避免由例如机械不对准引起的不良后果，并且当在设备的操作期间改变物镜和静电透镜中的一个的焦点被改变时表现出来 。

公开(公告)号：US5955244A

公开(公告)日：1999-09-21

申请号：US704471

申请日：1996-08-20

申请人： Paul J. Duval

发明人： Paul J. Duval

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  G11B5/31 ,  G11B5/39 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/16 ,  G03F7/09 ,  G03F7/0045 ,  G03F7/095

摘要： The process of the present invention is used to form resist features (22) having controlled predefined cross-sectional profiles, and is particular useful for forming features having reentrant profiles (24). In the process, a layer of a basic agent is formed on the substrate surface (20). Thereafter, a resist layer is formed on the layer of basic agent, causing at least a portion of the basic agent to diffuse into regions of the resist layer. The resist layer is exposed to radiant energy through a mask to form a patterned resist layer, which is developed to form resist features (22) having reentrant profiles (24) at those regions of the resist layer containing the diffused basic agent. The reentrant resist features (22) formed by the present method facilitates manufacture of magnetic heads, magnetoresistive sensors (102), and electronic components.

摘要翻译： 本发明的方法用于形成具有受控的预定截面轮廓的抗蚀剂特征（22），并且特别用于形成具有折返轮廓（24）的特征。 在该方法中，在基材表面（20）上形成一层碱性试剂。 此后，在碱性试剂层上形成抗蚀剂层，使至少一部分碱性试剂扩散到抗蚀剂层的区域。 通过掩模将抗蚀剂层暴露于辐射能，以形成图案化的抗蚀剂层，其被显影以形成在包含扩散的碱性试剂的抗蚀剂层的那些区域处具有折入型材（24）的抗蚀剂特征（22）。 通过本方法形成的可折入抗蚀剂特征（22）有助于磁头，磁阻传感器（102）和电子部件的制造。

公开(公告)号：US5448822A

公开(公告)日：1995-09-12

申请号：US29125

申请日：1993-03-10

申请人： Andrew L. Wu ,  Paul J. Duval

发明人： Andrew L. Wu ,  Paul J. Duval

IPC分类号： G11B5/31 ,  H01F41/04 ,  G11B5/842

CPC分类号： G11B5/3163 ,  G11B5/313 ,  H01F41/042 ,  Y10T29/49062

摘要： A method of making a thin film magnetic head having multi-layer coils wherein a raised insulative photoresist spiral pattern having undercut sidewalls is formed. Two layers of coils are fabricated simultaneously by evaporating metal onto the upper surface of the spiral pattern and in spaces between the pattern. The cross-section of the bottom coil decreases in width with an increase in height. The coils are insulated from each other with a layer of insulative photoresist.

摘要翻译： 一种制造具有多层线圈的薄膜磁头的方法，其中形成具有底切侧壁的凸起的绝缘光致抗蚀剂螺旋图案。 通过将金属蒸发到螺旋图案的上表面和图案之间的空间中同时制造两层线圈。 底部线圈的横截面随着高度的增加而减小。 线圈由绝缘光致抗蚀剂层彼此绝缘。

公开(公告)号：US08754421B2

公开(公告)日：2014-06-17

申请号：US13404245

申请日：2012-02-24

申请人： Paul J. Duval ,  Kamal Tabatabaie ,  William J. Davis

发明人： Paul J. Duval ,  Kamal Tabatabaie ,  William J. Davis

IPC分类号： H01L29/201 ,  H01L21/30

CPC分类号： H01L21/71 ,  G03F9/7076 ,  G03F9/708 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming an alignment mark on a semiconductor structure using an optical lithography to form a metal alignment mark on a substrate of the structure, using the formed metal alignment mark to form a first feature of a semiconductor device being formed on the substrate using optical lithography, and using the formed metal alignment mark to form a second, different feature for the semiconductor using electron beam lithography. In one embodiment, the first feature is an ohmic contact, the second feature is a Schottky contact, the metal alignment mark is a refractory metal or a refractory metal compound having an atomic weight greater than 60 such as TaN and the semiconductor device is a GaN semiconductor device. A semiconductor structure having a metal alignment mark on a zero layer of the structure, the metal alignment mark is a TaN and the semiconductor is GaN.

摘要翻译： 使用光刻法在半导体结构上形成对准标记，以在结构的基板上形成金属对准标记，使用所形成的金属对准标记，以形成利用光刻法形成在基板上的半导体器件的第一特征，以及 使用形成的金属对准标记来形成使用电子束光刻的半导体的第二不同特征。 在一个实施例中，第一特征是欧姆接触，第二特征是肖特基接触，金属对准标记是原子量大于60的难熔金属或难熔金属化合物，例如TaN，并且半导体器件是GaN 半导体器件。 在结构的零层上具有金属对准标记的半导体结构，金属对准标记为TaN，半导体为GaN。

公开(公告)号：US20130221365A1

公开(公告)日：2013-08-29

申请号：US13404245

申请日：2012-02-24

申请人： Paul J. Duval ,  Kamal Tabatabaie ,  William J. Davis

发明人： Paul J. Duval ,  Kamal Tabatabaie ,  William J. Davis

IPC分类号： H01L29/201 ,  H01L21/30

CPC分类号： H01L21/71 ,  G03F9/7076 ,  G03F9/708 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming an alignment mark on a semiconductor structure using an optical lithography to form a metal alignment mark on a substrate of the structure, using the formed metal alignment mark to form a first feature of a semiconductor device being formed on the substrate using optical lithography, and using the formed metal alignment mark to form a second, different feature for the semiconductor using electron beam lithography. In one embodiment, the first feature is an ohmic contact, the second feature is a Schottky contact, the metal alignment mark is a refractory metal or a refractory metal compound having an atomic weight greater than 60 such as TaN and the semiconductor device is a GaN semiconductor device. A semiconductor structure having a metal alignment mark on a zero layer of the structure, the metal alignment mark is a TaN and the semiconductor is GaN.

摘要翻译： 使用光刻法在半导体结构上形成对准标记，以在结构的基板上形成金属对准标记，使用所形成的金属对准标记，以形成利用光刻法形成在基板上的半导体器件的第一特征，以及 使用形成的金属对准标记来形成使用电子束光刻的半导体的第二不同特征。 在一个实施例中，第一特征是欧姆接触，第二特征是肖特基接触，金属对准标记是原子量大于60的难熔金属或难熔金属化合物，例如TaN，并且半导体器件是GaN 半导体器件。 在结构的零层上具有金属对准标记的半导体结构，金属对准标记为TaN，半导体为GaN。

公开(公告)号：US06678932B1

公开(公告)日：2004-01-20

申请号：US10011007

申请日：2001-11-08

申请人： Paul J. Duval ,  Vladimir Vayner

发明人： Paul J. Duval ,  Vladimir Vayner

IPC分类号： B25B2714

CPC分类号： H01J37/05 ,  H01J2237/057 ,  Y10T29/53961

摘要： In instruments such as Wien filters, electrostatic and/or magnetic pole pieces must be mounted on and secured to a supporting structure with a very high degree of dimensional precision, usually by brazing. To that end, a fixture is provided for holding the parts to be assembled in precise relationship and to press the pole pieces into engagement with the supporting structure while the securing operation is being carried out. The pressing is accomplished by a gravity-produced force which is, therefore, independent of positional accuracies caused by very high temperatures, such as are encountered during brazing.

摘要翻译： 在诸如维恩滤波器的仪器中，静电和/或磁极片必须通过钎焊而以非常高的尺寸精度安装在支撑结构上并固定到支撑结构上。 为此，提供了一种固定装置，用于以精确的关系保持要组装的部件，并且在执行固定操作的同时将极片压在支撑结构上。 压制是通过重力产生的力来实现的，因此，这是与由诸如在钎焊期间遇到的非常高的温度引起的位置精度无关的。

公开(公告)号：US06593578B1

公开(公告)日：2003-07-15

申请号：US10010321

申请日：2001-11-08

申请人： Paul J. Duval ,  Allan I. Rubin ,  Ira Rosenberg ,  Vladimir Vayner ,  Neal T. Sullivan

发明人： Paul J. Duval ,  Allan I. Rubin ,  Ira Rosenberg ,  Vladimir Vayner ,  Neal T. Sullivan

IPC分类号： H01F700

CPC分类号： H01J49/466 ,  H01J37/05 ,  H01J2237/057

摘要： A charged particle filter such as a Wien filter in which components used as the pole pieces and electrodes are precisely and reliably secured to a supporting structure through which they extend and to which they are brazed. Electrical insulating gaps in the magnetic circuit are located very remotely from the pole faces of the pole pieces so as to minimize any adverse effect of the gaps on the produced magnetic field.

摘要翻译： 带电粒子滤波器如维恩滤波器，其中用作极片和电极的部件被精确可靠地固定到支撑结构，通过它们延伸并被钎焊到该支撑结构。 磁路中的电气绝缘间隙非常远离极片的极面，以最小化间隙对所产生的磁场的任何不利影响。