摘要:
A memory having an array of memory cells. The array includes a plurality of normal memory cells and a redundant memory cell. A decoder is provided for selecting an addressed one of the normal memory cells in response to an address and a normal condition signal and adapted address the redundant memory cell in response to the address and a fault condition signal. A redundant decoder is provided having an electronically erasable read-only-memory cell. The redundant decoder is adapted to produce the normal condition signal and to convert the normal condition signal into the fault condition signal when such read-only-memory cell is programmed into a fault condition. Each one of the read-only memory cells include a flash memory cell, a ferroelectric memory cell, or other such type of electronically erasable read-only memory cell which is substantially non-volatile and is able to retain its programmed state for a relatively long period of time. With such an arrangement, because the electronically erasable read-only-memory cell is electronically programmable, a defective normal memory cell may be replaced with a redundant memory cell the memory is packaged.
摘要:
The invention features a method for reading and storing a binary memory cell signal where a signal transit time of the binary memory cell signal between one memory cell and an output terminal is reduced. The method includes applying a binary memory cell signal to a bit line pair; switching through the binary memory cell signal from the bit line pair to a local data line pair via a sense amplifier; switching through the amplified binary memory cell signal by a main data switching unit from the local data line to a main data line pair; and outputting the amplified, transferred binary memory cell signal via the first main data line and the second main data line pairs.
摘要:
The segmented word line architecture has two master word lines, to which sub-word lines are alternately allocated. Two memory banks can thus be alternately assigned to the sub-word lines.
摘要:
An integrated circuit includes a programmable circuit with a programmable element, and a storage circuit to store a storage state depending on a programming state of the programmable element of the programmable circuit unit. The storage circuit includes a first inverter circuit and a second inverter circuit. The strengthening and weakening of transistors of the first inverter circuit and of transistors of the second inverter circuit and also the repeated evaluation of the programming state of the programmable element enable the storage state stored in the storage circuit to be made resistant to corruption on account of alpha-particles or neutrons.
摘要:
A memory configuration includes a central connection area. The central connection area is surrounded annularly by cell arrays having memory cells. The memory configuration has compact external dimensions and is suitable, in particular, for a side ratio of 2:1. All the peripheral circuits are preferably disposed in the central connection area. As a result, the propagation time differences between the peripheral circuits and the various cell arrays are relatively small.
摘要:
The semiconductor memory of the random access type has data lines, which can be connected to the local data lines in the memory cell array. The data lines are combined in groups and at least one group or individual data lines of the groups are formed by redundant data lines. Input/output lines lead from the memory in groups. A bus system organized in two planes is provided. The first plane is provided with bus lines which can be connected to all of the input/output lines, on the one hand, and to all of the data lines, on the other hand. The second plane has a plurality of individual partial buses, whose bus lines can be connected to in each case all of the data lines of at least two groups of data lines, on the one hand, and to all of the input/output lines of in each case one group, on the other hand.
摘要:
The memory banks of semiconductor memories are activated via memory bank decoders. Two groups of memory banks are actuated via identical memory bank decoders. A predecoder is used to switch between the memory bank decoders. The layout of a memory bank decoder in a memory with a smaller memory capacity can thus be transferred without a change to a memory with a greater memory capacity.
摘要:
A fault-tolerant memory device provided with a variable domain redundancy replacement (VDRR) arrangement is described. The memory device includes: a plurality of primary memory arrays; a plurality of domains having at least portions of one domain common to another domain to form an overlapped domain area, and at least one of the domains overlapping portions of at least two of the primary memory arrays; redundancy units, coupled to each of the domains, for replacing faults contained within each of the domains; control circuitry for directing at least one of the faults within one of the domains to be replaced with the redundancy units, wherein at least one other fault of the one domain is replaced by the redundancy unit coupled to another of the domains, if the at least one other fault is positioned within the overlapped domain area. Each redundancy unit supporting the primary memory arrays includes a plurality of redundant elements. Unlike the conventional fixed domain redundancy replacement scheme, RUs are assigned to at least two variable domains, wherein at least a portion of the domain is common to that of another domain. The VDRR makes it possible to choose the most effective domain, and in particular, a smaller domain for repairing a random fault or a larger domain for repairing a clustered faults.
摘要:
The invention provides a method in which a binary memory cell signal from a; least one memory cell is applied to at least one bit line pair (201t, 201b), the binary memory cell signal from the memory tell is switched through via the bit line pair (201t, 201b) to at least one sense amplifier (202), a binary output signal of the sense amplifier (202) is switched through to a local data line pair (205) as a binary intermediate signal, the binary intermediate signal on the local data line pair (205) is switched through to at least one main data line pair (208) by means of a main data line switching transistor pair (209) in a manner dependent on a row control signal fed via a row control line (210), the main data line switching transistor pair (209) being arranged in the through-plating regions formed between the memory cell arrays.
摘要:
An electronic memory device which includes a memory array having a plurality of memory cells arranged into a plurality of units. Each unit is divided into a first portion including only even addressed memory cells and a second portion including only odd addressed memory cells. A column decoder and row decoder are coupled to the memory array for selecting a number of the plurality of memory cells. A sense amplifier is coupled to the memory array for performing read and write operations from the selected memory cells. An address line is split for application of a split address to said even and odd addressed memory cells.