Chemical vapor deposition apparatus
    1.
    发明授权
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号:US06197121B1

    公开(公告)日:2001-03-06

    申请号:US09345032

    申请日:1999-06-30

    IPC分类号: C23C1600

    摘要: Reactors for growing epitaxial layers on substrates are disclosed including rotatable substrate carriers and injectors for injecting gases into the reactor towards the substrates on the carriers and including a gas separator for separately maintaining various gases between gas inlets and the injector. Various reactor embodiments are disclosed including removable gas separators, and particular injectors which include cooling channels, as well as flow restrictors mounted within the reactors to restrict the flow of the gases to the substrates from the injector, and heaters mounted within the rotatable shell holding the substrate carriers so that the heaters can be accessed and removed through a lid forming a wall of the reactor.

    摘要翻译: 公开了用于在衬底上生长外延层的反应器,其包括可转动的衬底载体和用于将气体注入载体上的衬底的反应器的喷射器,并且包括用于分别保持气体入口和注射器之间的各种气体的气体分离器。 公开了各种反应器实施方案,包括可移除的气体分离器和包括冷却通道的特定注射器以及安装在反应器内的限流器,以限制从喷射器流到基板的气体,以及安装在可旋转外壳内的加热器, 衬底载体,使得可以通过形成反应器的壁的盖子来访问和移除加热器。